ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The ambipolar diffusion length is measured in strained InxGa1−xAs/InP quantum wells for several mole fractions in the interval 0.3〈x〈0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with results of carrier lifetime experiments by M. C. Wang, K. Kash, C. E. Zah, R. Bhat, and S. L. Chuang [Appl. Phys. Lett. 62, 166 (1993)].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109381
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