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  • 1
    Electronic Resource
    Electronic Resource
    Recent theoretical chemical dynamics at Rochester in the paths of Joseph O. Hirschfelder (1982)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 1075-1086 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100396a007
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  • 2
    Electronic Resource
    Electronic Resource
    Group theoretical approach to semiclassical dynamics: Multimode case (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 917-923 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A recently proposed procedure for computing the S matrix for collinear molecular collisions is extended from the single-mode case to the multimode case. In this procedure the semiclassical Hamiltonian describing the molecular collision is integrated in a finite-dimensional, faithful nonunitary representation of the dynamical group. When the integration is completed, the resulting group operation is mapped into the infinite-dimensional unitary representation to describe the S matrix which acts on the molecular Hilbert space and describes collisional excitation of the internal vibrational modes. This procedure is implemented to study the two-mode collision process N2+O2 and the two three-mode collision processes N2+CO2 and NO+CO2. The results compare favorably with other treatments of these collinear collision processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457142
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  • 3
    Electronic Resource
    Electronic Resource
    Chaotic electronic scattering with He+ (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 569-580 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate classical electronic collisions with a He+ ion. Scattering functions, such as the scattering angle, collisional time, or energy of the outgoing electron, all exhibit an interesting hierarchial self-similar structure, which can be interpreted in terms of the indefinite number of electronic returns to the vicinity of the nucleus, encounters between electrons, and Keplerian excursions of electrons during the collisional processes. Based on this mechanism a binary coding is introduced to organize the dynamics of this three-body system and to provide an understanding of the self-similarity among generations of scale magnification, which yields escape rates that vary with the sectional cut into the parameter space. The self-similarity displayed within a single generation, on the other hand, can be simply tied to the periods of the two independent electronic excursions. The physical interpretation and the symbolic dynamics introduced here are generally useful for three-body collisional systems, including atomic, molecular, or stellar collisions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.165961
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  • 4
    Electronic Resource
    Electronic Resource
    Chaotic scattering on a double well: Periodic orbits, symbolic dynamics, and scaling (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 475-485 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate classical scattering of particles by a double-well potential. Irregularity in the scattering functions, such as scattering angle and escape time, appears when the collision energy is lowered below a threshold value. This threshold is closely related to the appearance of periodic orbits with energies above the potential maxima. We study the scattering as a function of the energy and impact parameter. In this initial parameter space the scattering functions consist of regular regions interlaced with chaotic rivers. A symbolic dynamics has been developed to organize these structures and used to reveal their scaling properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.165953
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2974-2977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice parameters of heavily boron doped silicon homoepitaxial layers before and after rapid thermal annealing at different temperatures (800–1100 °C) are characterized by x-ray double crystal diffraction. The results illustrate that although the strain relaxation occurs after the rapid thermal annealing (RTA) treatment, the improvement of the crystalline quality of epitaxial layers are observed at RTA temperatures higher than 1000 °C. The proportional relationship between the lattice mismatch and the substitutional boron concentration with the lattice contract coefficient β=5.3 (in units 10−24 cm3) is valid up to the concentration of 3×1020 cm−3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358713
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal annealing on electrical properties of heavily doped silicon molecular-beam-epitaxial layer with B2O3 doping source (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1697-1700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing (RTA) on the electrical properties of heavily boron-doped silicon epilayer grown at 680 °C by molecular-beam epitaxy and coevaporation of B2O3 is studied. Through the RTA process, the boron clusters in the epilayer break into boron atoms and the interstitial boron enters the substitutional site. These two effects cause the improvement of the electrical properties of the silicon epilayer. After RTA at 1100 °C for 10 s, the hole concentration can reach 3.1×1020 cm−3 with the mobility of 39 cm2/V s, which is about the same as that of the bulk silicon, while the oxygen concentration is less than 1018 cm−3. It is also shown that the full width at half-maximum of the x-ray-diffraction rocking curve decreases as the RTA temperature increases. The RTA process does not affect the steep distribution of carrier concentration at the epilayer/substrate interface which differs by about 6 orders of magnitude across the interface with the leading edge slope of 25–30 nm/decade.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357683
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  • 7
    Electronic Resource
    Electronic Resource
    A new concept in laser-assisted chemistry: the electronic-field representation (1977)
    s.l. : American Chemical Society
    Accounts of chemical research 10 (1977), S. 449-455 
    Details
    ISSN: 1520-4898
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ar50120a004
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  • 8
    Electronic Resource
    Electronic Resource
    Dissociation dynamics of a field-evaporated diatomic ion: Rovibrational coupling, isotope effects, and fractal field thresholds (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 170-179 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We investigate the classical dissociation dynamics of field-evaporated HeRh2+, in which we consider explicitly the couplings between the vibrational, rotational, and translational degrees of freedom of the diatomic ion. We show that dissociation starts with rapid rotations driven by the large electric field gradient. Through rovibrational coupling rotational energy is converted into vibrational energy via cycles of sudden increase in interatomic distance and settling-down to rapid vibrational motion. During any of such rotational–surge–rapid–vibration cycles the molecule may dissociate and the dissociation threshold varies drastically with the isotopes of He as observed experimentally. When compared to experimental data our model provides information about the range parameter of the interaction potential of the diatomic ion. We show also that the boundary separating the dissociating and nondissociating trajectories exhibits fractal behavior as a function of the field strength. Furthermore, using ensembles of trajectories we have found that the dissociation fraction is a highly fluctuating function of the field strength near the dissociation threshold and that the time-of-flight spectra consist of four to five pronounced peaks on a noisy background. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469388
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  • 9
    Electronic Resource
    Electronic Resource
    Phase-dissipative mechanisms for laser-induced surface desorption/dissociation processes (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 5772-5774 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150668a005
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  • 10
    Electronic Resource
    Electronic Resource
    Group theoretical approach to semiclassical dynamics: Single mode case (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 130-139 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The algebraic structure of a truncated semiclassical Hamiltonian describing the translational–vibrational interaction has been determined and exploited to compute the S matrix for the system. The equations of motion have been integrated in a 4×4 faithful nonunitary representation of the group, and the final results lifted to the infinite dimensional unitary representation of the group. Computations of transition probabilities are facilitated by using powerful disentangling theorems to write the S matrix in convenient operator-ordered form. These methods are in quantitative agreement with results of Gazdy and Micha, and generalize easily to the multimode case. The structure of the Ehrenfest equations of motion for the operators of the algebra is identical to the structure of the dynamical algebra itself. The S matrix is also reconstructed from these equations of motion. Finally, a simple geometric picture is presented to describe the two extreme limits of the parametric oscillator problem involving only single quantum transitions or double quantum transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452745
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