ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Low-temperature plasma-enhanced chemical vapor deposition of amorphous carbon(a-C:H) films was investigated for surface passivation of carbon-doped silicon oxide (SiOCH) films.The a-C:H films were deposited using CH4 and Ar gases at 40–65°C. FT-IR results showed that thedeposited films are a-C:H which incorporates hydrocarbon groups. In current−voltage measurements,the a-C:H showed a low leakage current of ~10–10 A/cm2 in air, indicating that the a-C:H films have apotential as a surface passivation layer to prevent moisture absorption in air. The insulating propertiesof room-temperature deposited SiOCH covered by the a-C:H strongly depended on radio frequency(RF) power in the SiOCH deposition. In the SiOCH film deposited at high RF power of 200 W, theresistivity in air was improved by the a-C:H passivation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.26-28.645.pdf
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