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  • 1
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    The egg trace method of identifying diamondback squid fishing grounds in Jamaican waters (2021)
    In:  http://aquaticcommons.org/id/eprint/13201 | 9596 | 2014-02-03 21:48:06 | 13201 | Gulf and Caribbean Fisheries Institute
    Details
    Publication Date: 2021-07-09
    Description: Item includes an abstract in Spanish. Page range is taken from table of contents for proceedings volume (page numbers in article are incorrect due to publishing error).
    Keywords: Fisheries ; GCFI
    Repository Name: AquaDocs
    Type: conference_item
    Format: application/pdf
    Format: application/pdf
    Format: 301-306
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  • 2
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. II. Selective deposition in the regions defined by electron-beam irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3887-3893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports a selective-area deposition process using chlorosilane-treated ultrathin SiO2 masks on which the patterns are directly defined by irradiation of a focused electron beam (EB). Three different chlorosilane gases (SiH2Cl2, SiHCl3, and SiCl4) were first adsorbed on the SiO2 surfaces, and the regions with reactive sites were defined by taking advantage of electron-stimulated desorption (ESD) of the surface adsorbates. For the SiHCl3- and SiH2Cl2-treated surfaces, the nucleation density was remarkably high in the EB-irradiated regions. Such nucleation enhancement was less significant for the SiCl4-treated surface. For the purpose of direct patterning and selective growth, we conclude that SiHCl3 is the optimum treatment gas because it effectively suppresses Si nucleation outside of the EB-irradiated patterns. The overall ESD sensitivity of the SiHCl3-adsorbed mask was 50 mC/cm2, and a significant nucleation enhancement was observed by irradiation of 7 mC/cm2. We also report an extension of this selective-area processing to window opening through the ultrathin SiO2 mask layer. The factors limiting the minimum feature size of the grown Si structures and the opened windows are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402978
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. I. Suppression and enhancement of Si nucleation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3879-3886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the nucleation processes in chemical vapor deposition (CVD) of Si on SiO2 surfaces that were treated with different chlorosilane gases SiHnCl4−n, where n=0, 1, or 2. These gases chemisorb on the SiO2 surface in a self-limiting manner. At 493 K, the saturation coverage was reached at 4×108 L exposure for the SiH2Cl2 gas, and at 2×109 L for the SiHCl3 and SiCl4 gases. CVD of Si was carried out on the chlorosilane-saturated SiO2 surfaces using Si2H6 as a source gas at 853 K. It has been found that the SiCl4 and SiHCl3 treatments effectively passivate the nucleation centers on the SiO2 surfaces, while the SiH2Cl2 treatment drastically enhances Si nucleation. The reaction mechanisms causing these differences are discussed, considering the structural changes of the adsorbed chlorosilane fragments at the CVD temperature. Application of the SiCl4 treatment to the patterned SiO2 mask for selective-area epitaxial growth of Si is demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402977
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2413-2415 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Existence of Zn-As and Ga-Se interfacial layers were suggested by transmission electron microscopy in Zn treated and Se treated or reacted ZnSe/GaAs interfaces, respectively. High densities of As precipitates and Shockley partials were introduced in films with Zn treatment on a c(4×4) As-rich GaAs surface. In addition, high densities of vacancies and Shockley partials were obtained in samples with a Se-reacted ZnSe/GaAs interface. Formation of the Shockley partials may originate from the stacking errors induced by disordering of Zn- or Ga-interstitials on the GaAs surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116151
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  • 5
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSe (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 57-59 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-resistivity p-type ZnSe layers have been successfully grown on GaAs substrates by metalorganic vapor phase epitaxy with the use of dimethylzinc and diethylselenide as source materials and lithium nitride as the dopant. The lowest resistivity achieved is 0.2 Ω cm, and the highest carrier concentration is 9×1017 cm−3. ZnSe p-n diodes fabricated by this technique have shown blue emission; the spectral peak is located at 467 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99317
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  • 6
    Electronic Resource
    Electronic Resource
    Ultrathin device quality oxide-nitride-oxide heterostructure formed by remote plasma enhanced chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2226-2228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report our study on an oxide-nitride-oxide (ONO) heterostructure as a dielectric material in a metal-insulator-semiconductor field-effect transistor with Si as a semiconductor. The electrical properties of the ONO dielectrics have been correlated with: (i) the process related effects; (ii) the accumulation of N atoms and its bonding with Si at the SiO2/Si interface; and (iii) the chemical bonding within the nitride layers. By combining the remote plasma enhanced chemical vapor deposition and the rapid thermal annealing process, the device quality ONO structure with an oxide equivalent thickness of 4.7 nm has been successfully manufactured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111681
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  • 7
    Electronic Resource
    Electronic Resource
    Evidence of rapid equilibration near the hot filament in diamond deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3524-3526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical composition of the gas phase during the diamond growth by a hot-filament method was measured gaschromatographically for two different configurations with feed gas introduction, the conventional method from a nozzle equipped on a reactor wall and the jet feed from a hole bored in a substrate located just beneath the filament. CH4 and C2H2, diluted in H2, were used as a source gas. The results indicated that equilibration took place so rapidly near the filament that even the jet-feed mixture was converted to a thermodynamically stable composition composed mainly of C2H2, H, and H2. Insensitivity of the diamond process to the source hydrocarbon and its sensitivity to the filament-and-substrate configuration can be well interpreted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110090
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature preparation of SiO2/Si(100) interfaces using a two-step remote plasma-assisted oxidation-deposition process (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 434-436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2/Si(100) interfaces have been prepared by a low-temperature, 200–300 °C, remote plasma-assisted oxidation-deposition process. The oxidation: (i) creates ∼0.5 nm of SiO2; (ii) removes residual C from an otherwise H-terminated Si surface; and (iii) produces a SiO2/Si interface with a midgap trap density of ∼1×1010 cm−2 eV−1, and when combined with remote plasma-enhanced chemical vapor deposition (RPECVD) of SiO2, (iv) forms a SiO2/Si structure with properties comparable to those prepared by thermal oxidation of Si at 850–1050 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106626
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  • 9
    Electronic Resource
    Electronic Resource
    Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1266-1268 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122370
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  • 10
    Electronic Resource
    Electronic Resource
    The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 939-941 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc coverage and the structures of Zn-exposed As-stabilized GaAs(001)-(2×4) and -c(4×4) surfaces have been studied using x-ray photoelectron spectroscopy and scanning tunneling microscopy in order to clarify the role of the Zn pre-exposure process in ZnSe growth on GaAs(001). Since Zn atoms stick on the GaAs-(2×4) surface even though their interaction is very weak, Zn may act as a balancer to form a neutral ZnSe/GaAs interface. Zn can also remove excess As atoms and make a "pure" (2×4) structure that is the only possible starting surface for low-defect ZnSe heteroexpitaxy on a GaAs(001) surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122045
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