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  • 1
    Electronic Resource
    Electronic Resource
    A Raman investigation of the hydration number of scandium(III) ions (1989)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 1695-1697 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100342a007
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  • 2
    Electronic Resource
    Electronic Resource
    Production of ultrafine aluminum and aluminum nitride particles by plasma–alloy reaction and their microstructure and morphology (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4025-4029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preparation condition, microstructure, and morphology of ultrafine Al and AlN particles were examined by a combined technique of nitrogen plasma–aluminum reaction and spray deposition as well as by metallographic techniques. The Al and AlN particles have the morphologies of sphere and hexagonal plate, respectively, and the particle size is 5 to 200 nm for Al and 20 to 120 nm for AlN. The volume ratio of AlN to Al increases continuously with an increase of the mixing gas ratio of nitrogen to argon and the total pressure of nitrogen and reaches about 25% in a nitrogen atmosphere with a pressure of 93 kPa. The composite Al–AlN particles are also observed and have an orientation relationship of (111)Al//(001)AlN, [101¯]Al//[110]AlN, and [12¯1]Al//[11¯0]AlN, in which the lattice misfit is as small as 6.4%, 8.6%, and 8.6%, respectively. The formation of the composite particles is presumed to result from the collision and incorporation of Al particles with the AlN plate adhered to Al particles. The Al and AlN particles produced by the present method are concluded to be small and homogeneous enough to be used as raw materials for the production of nanoscale composites and compositionally gradient materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350825
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  • 3
    Electronic Resource
    Electronic Resource
    Improvement of photoconductivity of a-SiC:H films by introducing nitrogen during magnetron sputtering process (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1518-1521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen has been introduced in the preparation of hydrogenated amorphous silicon carbon alloy films by magnetron sputtering of silicon in a methane-argon gas mixture. The partial pressure of nitrogen was changed, and its effects on the structural, optical, electrical, and optoelectronic properties of the deposited films were investigated. The SiN bond becomes predominant with increasing partial pressure of nitrogen pN above 10%, at which the optical band gap is rapidly increased. The concentration of silicon and carbon in the films remained almost unchanged by changing pN up to 20%. It was found that the photoconductivity is also almost unchanged up to 20%, while the optical band gap is increased. This indicates that the photoconductivity is improved over a wider optical band gap, as compared with previous studies when the optical band gap was changed by changing deposition conditions but without introducing nitrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347242
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  • 4
    Electronic Resource
    Electronic Resource
    Production of compositionally gradient Al-AlN films by reactive sputtering and their mechanical and electrical properties (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3278-3282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of reactive sputtering in a mixed gas of argon (Ar) and nitrogen (N2) to Al metal resulted in the formation of compositionally gradient film consisting of Al and AlN phases. By changing the mixing gas ratio of N2 to N2+Ar so as to be 0, 0.05, 0.1, and 0.2 in a total gas pressure of 1 Pa, the resulting phase changes in the order of Al, Al+AlN, AlN+Al, and AlN and the thickness of each phase is 14, 23, 18, and 8 μm, respectively, after sputtering for 3.6, 5.4, 7.2, and 10.8 ks, respectively. The Al concentration along the sample thickness changes from 100% to about 50% with an increase of mixing ratio from 0 to 0.2. The lattice parameters of Al and AlN phases remain constant along the sample thickness. The Knoop hardness and the electrical resistivity increase steeply from 100 to 3900 and from 3×10−8 Ω m to an infinite value, respectively, with the phase transition from Al to AlN through Al+AlN and AlN+Al. The load leading to an exfoliation among the layers was measured to be 16 N. Thus, the sputtered Al-AlN film is concluded to possess functionally gradient characteristics resulting from the compositional and structural gradients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350975
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  • 5
    Electronic Resource
    Electronic Resource
    Planar inductors with a new coil configuration (abstract) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5368-5368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-frequency (f≥1 MHz) magnetic power devices are key elements for developing compact and low-profile switching power supplies. Planar inductors with a flat coil are investigated,1–3 however, a problem arising from the use of a flat coil is not addressed. The problem is that normal components to the magnetic plate inevitably exist in the exciting fields from a flat coil and that those components induce severe in-plane eddy currents. The problem is most typical in the case of a spiral coil. In this paper, a new flat coil is proposed (see Fig. 1) for planar inductors which greatly improves the problem because paths of eddy currents are chopped up corresponding to the mesh size of the coil. It is obvious that density of eddy currents becomes small when the mesh size becomes fine. Sandwich planar inductors with a proposed coil (mesh coil) and a meander one were prepared for preliminary tests using pairs of Metglas 2705M amorphous ribbons of 50×50 mm2 and 100-μm copper wires, where the mesh size was 3 mm, equal to the pitch of the meander coil. Inductances at 1 MHz were 1.85 μH for the mesh coil and 2.25 μH for the meander one, whereas Qmax=5 at 6 MHz for the mesh coil and 4.5 at 2 MHz for the meander one. Advantages of the mesh coil may further become clear when it is made on the magnetic plates with thin insulating layer in between by IC or thick-film process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348033
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  • 6
    Electronic Resource
    Electronic Resource
    Optical functions of low-k materials for interlayer dielectrics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2189-2193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical functions of low dielectric constant (low-k) materials have been determined using a high-precision four-zone null spectroscopic ellipsometer in the spectral range from 1.5 to 5.4 eV (230–840 nm wavelength region). The ellipsometric data were fitted simultaneously with near-normal incidence reflectivity spectra (ranging from 0.5 to 6.5 eV). A general method of simultaneous treatment of ellipsometric and reflectivity data is demonstrated on representative materials used in the semiconductor industry for interlayer dielectrics: (1) SiLK—organic dielectric resin from the Dow Chemical Company, (2) Nanoglass—nanoporous silica from the Honeywell Electronic Materials Company, and (3) tetra-ethyl-ortho-silicate (TEOS) (SiO2)—the standard dielectric material. The low-k materials (SiLK and Nanoglass) were prepared by a standard spin-coating process, while the SiO2 layer was prepared by thermal decomposition from TEOS onto single-crystal silicon wafers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1344214
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  • 7
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry of epitaxial ZnO layer on sapphire substrate (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7820-7824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of epitaxial ZnO layers have been studied in the spectral region from 1.5 to 5.4 eV using four-zone null spectroscopic ellipsometry. An existing model dielectric function based on excitonic structure near direct band gap has been improved by including a high-energy absorption term. Surface layer, corresponding to the surface roughness, was found to be essential to fit the spectroellipsometric data obtained. Two kinds of samples have been studied: ZnO layers prepared on (0001) and (112¯0)-oriented sapphire substrates. The surfaces of the first ones were found to be more rough. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373461
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature and photopolymerization effects in microhardness of C70 crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 470-474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microhardness of C70 crystals was investigated in the temperature range of 295–425 K. The hardness gradually decreased with increasing temperature. The photoinduced hardening was observed after the long-time illumination of light. The hardening reached the maximum near the phase transition temperature of 348 K. These results are discussed and compared with those of C60 crystals. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375804
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  • 9
    Electronic Resource
    Electronic Resource
    A practical fiber optic air-ratio sensor operating by flame color detection (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 197-202 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article discusses the development of a simple fiber-optic sensor used to detect the air-ratio in a premix type gas boiler, by monitoring and appraising the color of the flame emission, including the effect of radical emissions. Such boilers with a multi-port plate burner show an improved thermal efficiency, with the environmentally friendly effect of a reduction in both NOx and CO in the exhaust gas. The sensor is used to monitor and maintain the air-ratio in order to enable effective feedback control, and a low-cost, durable and small sensor solution is presented. Tests carried out show the potential of the sensor for use outside the laboratory and image processing techniques are used to analyze the spectral features of the emissions seen to confirm the spectral regions of use of the fiber-optic sensor. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147809
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  • 10
    Electronic Resource
    Electronic Resource
    Comparative study of properties between a-GeC:H and a-SiC:H films prepared by radio-frequency reactive sputtering in methane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3949-3954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous germanium–carbon (a-GeC:H) and silicon–carbon (a-SiC:H) films were deposited by reactive magnetron sputtering of Ge and Si targets in a methane argon gas mixture. The effect of rf power on the structural, optical, and electrical properties of the films was investigated. The carbon content in a-SiC:H films is larger than in a-GeC:H for the same deposition condition, and it decreases with increasing rf power. The intensity of the carbon-related bonds, the optical band gap, and the activation energy of dc conductivity of both films decreases with decreasing carbon content. The temperature dependence of dc conductivity of a-SiC:H exhibits activated-type conduction, whereas hopping conduction is predominant in a-GeC:H. Hydrogen concentration and H bonding ratio are examined, indicating that the termination of the dangling bond by hydrogen is more effective in a a-SiC:H films than a-GeC:H films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359915
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