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  • 1
    Electronic Resource
    Electronic Resource
    Magnesium doping in In0.32Ga0.68P grown by liquid-phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4475-4480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mg-doped In0.32Ga0.68P epitaxial layers have been grown on (100) GaAs0.61P0.39 substrates by liquid-phase epitaxy using a supercooling method. The electrical properties of the Mg-doped layers are investigated using capacitance-voltage methods at 300 K. The full width at half maximum value of the 300-K photoluminescence spectrum increases with hole concentration for Mg-doped layers. The 77-K photoluminescence spectra show two peaks and one broad band, and their relative intensities change with various hole concentrations. The Mg acceptor ionization energy obtained from 77-K photoluminescence spectra is in the range from 20 to 38 meV. Finally, the photoluminescence spectra of Mg-doped In0.32Ga0.68P layers with three hole concentrations measured at various temperatures between 20 and 150 K are presented for the gradual evolution of the peaks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350791
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  • 2
    Electronic Resource
    Electronic Resource
    Tellurium and zinc doping in In0.32Ga0.68P layers grown by liquid-phase epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5040-5044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.32Ga0.68P epitaxial layers doped with Te and Zn were grown on (100) GaAs0.61P0.39 epitaxial substrates by liquid-phase epitaxy using a supercooling method. The electrical properties of doped layers were determined by C-V measurements at 300 K. Room-temperature carrier concentrations ranging from 9×1016 to 2×1018 cm−3 for n-type and from 3×1016 to 6×1018 cm−3 for p-type dopants are obtained reproducibly. The full width at half maximum value of the 300 K photoluminescent spectrum increases with carrier concentration for Te- and Zn-doped layers. The relative intensity of 300-K photoluminescent peak presents the maximum values at 1×1018 and 6×1017 cm−3 for electron and hole concentrations, respectively. The 100-K photoluminescent spectra show three distinctive peaks and their relative intensities change with hole concentrations. Finally, the relationship between the acceptor ionization energy and hole concentration is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349009
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  • 3
    Electronic Resource
    Electronic Resource
    Growth and characterization of single-heterostructure AlGaAs/InGaP red light-emitting diodes by liquid-phase epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 481-487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Te-doped Al0.7Ga0.3As/Mg -doped In0.5Ga0.5P on p-type GaAs substrate single-heterostructure light-emitting diodes have been reproducibly fabricated by liquid-phase epitaxy using a supercooling technique. The growth conditions and properties of the undoped and Mg- and Zn-doped In0.5Ga0.5P layers are described in detail. The strongest photoluminescence peak intensity occurs at a hole concentration of 1×1018 cm−3 of the Mg-doped layer. Diodes fabricated from the heterostructure are characterized by electron-beam-induced current, current-voltage measurement, electroluminescence, light output power, and external quantum efficiency. By appropriately controlling the hole concentration of the Mg-doped In0.5Ga0.5P active layer and the electron concentration of the Te-doped Al0.7Ga0.3As window layer, the p-n junction can be precisely located at the metallurgical junction as measured by the electron-beam-induced current technique. A forward-bias turn-on voltage of 1.5 V with an ideality factor of 1.65 and a breakdown voltage as high as 20 V are obtained from the current-voltage measurements. The emission peak wavelength and the full width at half maximum of electroluminescence spectra are around 6650 and 250 A(ring) at 20 mA, respectively. The light output power of the uncoated diodes is as high as 150 μW at a dc current of 100 mA and an external quantum efficiency of 0.085%–0.10% is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347689
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  • 4
    Electronic Resource
    Electronic Resource
    Growth and characterization of Ga0.65In0.35P orange light-emitting diodes by metalorganic vapor–phase epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1781-1786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-n Ga0.65In0.35P homostructure light-emitting diodes grown on GaAs0.7P0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. The growth and characterization of undoped, Si-, and Zn-doped layers are described in detail. The optimum growth condition to grow the high-quality Ga0.65In0.35P epitaxial layers is at the growth temperatures of 700–740 °C and V/III ratios of 100–200. The strongest photoluminescence peak intensity occurs at 2×1018 and 7×1017 cm−3 for electron and hole concentrations, respectively. Diodes fabricated from the p-n homostructure are characterized by current-voltage measurement, electroluminescence, and external quantum efficiency. A forward-bias turn-on voltage of 1.68 V with an ideality factor of 2.5 and a breakdown voltage of 9 V are obtained from the current-voltage measurements. The emission peak wavelength and full width at half-maximum of electroluminescence are around 610 nm and 79 meV at 20 mA. The external quantum efficiency of the uncoated diode is about 0.015%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354781
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of high-quality GaSb grown from Ga- and Sb-rich solutions by liquid-phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4275-4280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of photoluminescence from the high-quality unintentionally doped GaSb layers grown by liquid-phase epitaxy has been studied. The epitaxial layers grown at temperatures above 590 °C, from the Ga- or Sb-rich solutions, reproducibly have a low-carrier concentration of 6–8×1015 cm−3 and exhibit p-type conduction. But it gives n type as grown from the Ga-rich solution at 360 °C. For the samples grown from the Ga-rich solutions, the 16 K photoluminescence spectrum is dominated by the partially resolved lines related to the transitions of excitons bound to donors and neutral acceptors. The acceptor-related band (777.8 meV) which is always presented in the GaSb material due to the native lattice defects has been much reduced as compared to the exciton-related lines. Especially for the n-type samples grown at low temperatures (360 °C), the ratio of the emission intensity from the exciton-related lines to that from the acceptor-related band is 10. For the samples grown from the Sb-rich solutions, the 16 K photoluminescence spectrum is also dominated by a bound exciton-related line with a full width at half maximum of 4.2 meV. In addition, the free-exciton transition with a full width at half maximum of 0.4 meV is also observed. As the temperature is increased, the intensity of the lines associated with the bound excitonic transitions for all the GaSb samples rapidly quenches off and the free-electron-to-free-hole transition becomes dominant. The temperature dependent band gap in GaSb layers determined from the photoluminescence peak energy varies as 0.813–[1.08×10−4 T2/(T−10.3)] eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352216
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of the photoluminescence of Zn-doped In0.32Ga0.68P grown on GaAs0.61P0.39 substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1901-1906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) spectra of Zn-doped In0.32Ga0.68P epitaxial layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy has been investigated in the temperature range of 8–300 K. The radiative recombination processes of the direct In0.32Ga0.68P alloys for which the composition is near the direct–indirect band gap crossover point have been studied at various temperatures. At higher temperatures ((approximately-greater-than)150 K) only one emission band corresponding to free-electron-to-free-hole transition dominates. Two peaks and one broad band are observed in the PL spectrum when the temperature is below 100 K. The peak denoted by A is due to direct interband radiative recombination. The temperature dependence of the band gap in In0.32Ga0.68P layers can be expressed as 2.25 − [1.79 × 10−3T2/(T + 1236)] eV. The peak denoted by B, exhibited by undoped or moderately Zn-doped (p ≤ 3 × 1018 cm−3) InGaP samples, is attributed to the conduction-band-to-acceptor transition. A third broad band (C) dominates at low temperatures. The maximum shifts toward shorter wavelengths as the temperature is further lowered. It is the indirect donor–acceptor pair recombination from the unidentified deep donor levels associated with indirect Xc minima via Zn acceptor levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351178
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of erbium doping of InGaAsP layers grown by liquid-phase epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3482-3485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical measurements of InGaAsP layers grown by liquid-phase epitaxy with different amounts of Er metal (0–0.60 wt %) added to growth solutions are reported. The presence of Er during growth causes the decrease of electron concentration and the strong suppression of donor-related optical transitions due to the effective removal of donors. The characteristic Er3+ emission lines located in the 1.503–1.542 μm region can only be detected in the 1.3 μm wavelength Er-doped InGaAsP layers. We attribute it to be the formation of a new type of Er3+ center in the InGaAsP host.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352953
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  • 8
    Electronic Resource
    Electronic Resource
    Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 468-470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high purity InP layers have been grown by liquid phase epitaxy using rare-earth erbium as the donor-gettering source. All the Er-doped samples still exhibit n-type conduction, but its carrier concentration decreases with increasing the Er amount into the growth solution. The 300 K electron concentration as low as 7×1013 cm−3 has been achieved on high-purity layers. By low-temperature photoluminescence measurement, the donor impurities of the InP samples have been obviously reduced due to the Er gettering. The free-exciton line with a linewidth of 0.9 meV dominates in the exciton spectra and the intensity ratio of free exciton to exciton-bound-to-neutral-donor lines exceeds 2.6 for the high-purity layers with n=7×1013 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353875
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  • 9
    Electronic Resource
    Electronic Resource
    Growth-temperature dependence of electrical and luminescent properties of high-quality GaSb grown by liquid-phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1101-1103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth-temperature dependence of electrical and photoluminescent properties from high-quality GaSb layers grown by liquid-phase epitaxy has been studied. At the growth temperature of 600 °C, a hole concentration of ∼ 1 × 1017 cm−3 is obtained and the 16 K photoluminescence spectrum is dominated by the line BE2 at 802.9 meV associated with excitons bound to acceptors, and a stronger band-acceptor emission band at 777.8 meV. With reducing the growth temperature, the hole concentration gradually decreases, as does the line BE2 in the photoluminescence spectrum. The GaSb layer conduction converts from p to n with a minimum hole concentration of 2–6 × 1015 cm−3 when the growth temperature is below 450 °C. The line D located at 808.2 meV, due to a donor-bound exciton transition, becomes dominant and the band-acceptor emission becomes very weak at lower growth temperatures. The is the first report on the growth-temperature dependence of the excitonic transitions from high-quality GaSb layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351786
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  • 10
    Electronic Resource
    Electronic Resource
    Stress-induced outdiffusion of Be in p+ GaAs prepared by molecular-beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2767-2772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The well-known abnormal outdiffusion problem of heavily Be-doped GaAs prepared by molecular-beam epitaxy was found to be initiated by the shrinkage of the lattice constant of the (p+) GaAs epilayer. Through detailed investigation of the double-crystal x-ray spectra, van der Pauw measurements, photoluminescence, and infrared-absorption spectra of Be-doped GaAs for various doping concentrations, it is found that there exists a critical doping concentration, i.e., 2.6×1019/cm3, beyond which the lattice constant of the epilayer starts to shrink and the Be outdiffusion into the substrate is significantly enhanced. Apparently, the tensile stress on the epilayer results in the abnormal Be outdiffusion. The absorption coefficient of Be-doped GaAs in the 8–10 μm region with carrier concentration 8.3×1019/cm3 are found to be about 104 cm−1 which is useful for the application of this layer to a p+-type AlGaAs/GaAs heterojunction infrared detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351527
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