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  • 1
    Online Resource
    Online Resource
    Mine Waste Management in China: Recent Development (2020)
    Singapore :Springer Nature Singapore :
    Details
    Keywords: Geotechnical engineering. ; Refuse and refuse disposal. ; Mineralogy. ; Geotechnical Engineering and Applied Earth Sciences. ; Waste Management/Waste Technology. ; Mineralogy.
    Description / Table of Contents: Traditional Treatment of Mine Waste -- Solutions for Surface Disposal of Mine Tailings -- Case Study of Surface Consolidated Tailings Stockpile -- Case Study of Surface Cemented Tailings Discharge -- Solutions for Underground Placement of Mine Tailings -- Properties of Cemented Tailings Backfill -- Case Study of Cemented Tailings Backfill -- Solutions for Underground Placement of Coal Mine Waste -- Properties of Cemented Coal Gangue-Fly Ash Backfill -- Case Study of Cemented Coal Gangue-Fly Ash Backfill.
    Abstract: This book introduces recent development of technologies for mine waste management in China. For hard rock mines, the main mine wastes are tailings, and the tailings can be disposed above-ground and/or underground. The technology of consolidated tailings stockpile (CTS) that disposes tailings above-ground is introduced, and the application of this technology is also demonstrated. Besides, the technology of cemented tailings (or paste) backfill (CTB or CPB) which deals with tailings underground is also discussed. The properties of CTB materials and the utilization of CTB technology are described and analyzed. For coal mines, the main mine wastes are coal gangue and fly ash. The technology of cemented coal gangue-fly ash backfill (CGFB) that manages coal mine waste underground is presented. The THMC coupling properties of CGFB materials are investigated, which can contribute to a better design of stable, durable and environmentally friendly CGFB mixtures. The application of CGFB technology in a coal mine is also presented. This book, which systematically reviews and discusses the development of mine waste management technologies in China, is expected to provide readers comprehensive information about mine waste management.
    Type of Medium: Online Resource
    Pages: IX, 204 p. 174 illus., 151 illus. in color. , online resource.
    Edition: 1st ed. 2020.
    ISBN: 9789813292161
    URL: https://doi.org/10.1007/978-981-32-9216-1
    DOI: 10.1007/978-981-32-9216-1
    DDC: 624.151
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by chemical solution deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5941-5945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films were prepared on platinum coated silicon substrate by chemical solution deposition. The layered-perovskite phase was obtained by rapid thermal annealing the spin-on films at 650 or 700 °C for 180 s. Scanning electron micrographs showed uniform surfaces composed of spherical grains. The grain size increased with increasing annealing temperature. The remanent polarization and coercive field of 650 °C annealed film were 12.3 μC/cm2 and 48.9 kV/cm, respectively, and those of 700 °C annealed films were 18.2 μC/cm2 and 51.1 kV/cm. BLT thin films showed little polarization fatigue under 250 kV/cm bipolar cycling at 50 kHz, while fatigue properties deteriorated with decreasing cycling field and frequency. At various frequencies from 1 Hz to 50 kHz, nonvolatile polarization Pnv showed nearly no degradation over an initial period of cycling, then decayed logarithmically with switching cycles. The onset of logarithmic decay of Pnv was found to increase linearly with cycling frequency. The cycling field dependence of fatigue characteristics was interpreted in terms of competition of charge trapping which blocks the domain switching and field-assisted detrapping of charged defects which set the locked domains free. Frequency dependent fatigue properties were discussed on the basis of drift and aggregation of oxygen vacancies. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322387
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of metalorganic decomposition-derived SrBi2Ta2O9 thin films with different thicknesses (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1795-1800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric capacitors having sputtered Pt bottom and top electrodes and metalorganic decomposition derived ferroelectric thin films of SrBi2Ta2O9 (SBT) were prepared. The thickness effects on the structure, surface morphology, and electrical properties of SBT thin films were studied and discussed. Structure and surface morphology were analyzed by x-ray diffraction and atomic force microscope. The electrical properties were characterized by the measurements of hysteresis, capacitance, and pulse switching. The crystalline structure, grain size, and electrical properties do not depend on film thickness when films are less than 440 nm thick. A larger grain size is observed for films thicker than 440 nm, which results in a larger remnant polarization. The thickness dependence of the coercive voltage and reciprocal capacitance can be explained by an interfacial layer model. The thickness-independent coercive field and dielectric constant, calculated from the interfacial layer model, are around 19 kV/cm and 343, respectively. Nonvolatile polarization (Pnv), obtained from pulse-switching measurements, increases with the applied electric field and finally saturates with a slight thickness effect. The relaxation of the remnant polarization that occurs at zero-voltage intervals between the pulses and the thickness-independent behavior of Pnv are explained based on depolarization fields within the ferroelectric due to nonswitching interfacial layers at the film/electrode interfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372094
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication and electrical properties of sol-gel derived BaTiO3 films with metallic LaNiO3 electrode (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1616-1618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metallic LaNiO3 (LNO) films were prepared on LaAlO3 (LAO) by metalorganic decomposition (MOD) and their application as the bottom electrode in sol-gel derived BaTiO3 (BTO) thin film was studied by means of x-ray diffraction, Raman spectroscopy, and scanning electron microscopy. BTO film on LNO-coated LAO exhibited preferred (100) orientation and smooth surface with fine grains (∼50 nm). Electrical measurements on BTO film capacitor showed good ferroelectric hysteresis, lower loss tangent and good insulating properties. These results indicated the BTO/LNO heterostructure fabricated by sol-gel and MOD technique to be a promising combination for microelectronic device applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118633
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  • 5
    Electronic Resource
    Electronic Resource
    Room temperature aging behavior of thermally imprinted Pt/SrBi2Ta2O9/Pt ferroelectric thin film capacitors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4130-4133 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic-decomposition-derived SrBi2Ta2O9 (SBT) ferroelectric thin films, sandwiched between Pt electrodes, were imprinted by heat treatment at 130 °C in air. The aging behavior at room temperature of these imprinted SBT capacitors was observed. The voltage shifts of imprinted P–V hysteresis loops increased with the increase of aging time, which indicated the strengthening of the internal bias created by the thermal treatment. With the strengthening of the internal bias, asymmetry of data loss was observed to increase with increasing aging time. The mechanism of the internal bias strengthening, the resultant asymmetric data loss and possible function failure due to this aging behavior were briefly discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402663
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  • 6
    Electronic Resource
    Electronic Resource
    Geometry Effects on the Concentration and Reaction Rate Profile in Methanol Production Catalyst. 1. Neglecting External Diffusion (1994)
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 33 (1994), S. 2029-2033 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie00033a002
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of uniaxial stress on the polarization of SrBi2Ta2O9 thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3103-3105 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of uniaxial stress on the ferroelectric properties of SrBi2Ta2O9 films with different thicknesses (330, 440, and 660 nm) has been investigated. It is found that both the remnant polarization (Pr) and the spontaneous polarization (Ps) decrease with the application of compressive stress, but increase with the application of tensile stress. And the changes of Pr and Ps become larger for thicker films. For the 660 nm film, as the stress changed from −100 MPa (compressive) to +100 MPa (tensile), the Pr increases from −1.8% to +1.8%. Testing voltages in the range of 3–6 V showed no impact on the amplitude of change on the polarization under mechanical stress. Mechanical stress also did not show significant impact on the coercive field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126537
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  • 8
    Electronic Resource
    Electronic Resource
    Fatigue study of metalorganic-decomposition-derived SrBi2Ta2O9 thin films: The effect of partial switching (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2208-2210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fatigue characteristics of metalorganic-decomposition derived SrBi2Ta2O9 (SBT) ferroelectric thin films were investigated with varying film thickness, capacitor size, switching pulse amplitude, and pulse width. The effect of partial switching on fatigue was studied. An increase of nonvolatile polarization (Pnv) was observed over the initial period of fatigue when the capacitor was fully switched by the applied bipolar cycles. Fatigue increases with decreasing applied field and pulse width. These support the idea that fatigue in SBT may be viewed as a competition between domain-wall pinning and field-assisted unpinning. Partial switching caused by small field and short pulse width enhances charge trapping at domain walls, thus increasing fatigue. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126298
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  • 9
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in organic spin-valves (2004)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 427 (2004), S. 821-824 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] A spin valve is a layered structure of magnetic and non-magnetic (spacer) materials whose electrical resistance depends on the spin state of electrons passing through the device and so can be controlled by an external magnetic field. The discoveries of giant magnetoresistance and tunnelling ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02325
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  • 10
    Electronic Resource
    Electronic Resource
    Analysis of Cracking Phenomenon Occurring during Cold Forging of ML25Mn Steel (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 324-325 (Nov. 2006), p. 643-646 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Cold forging has various advantages compared to other forming processing. Crackingphenomenon was taken place during cold forging of ML25Mn steel. In this study, microstructuralanalyses were made on the cracked regions of the steel. The reason of cracking phenomenonoccurring during cold forging for ML25Mn steel was investigated based on SEM observation indetail. The results have shown that ML25Mn steel presents lower strength and toughness. A largeramount of inclusions which are composed of MnS and complex oxides containing Mg, Al, Mn, Fe,S, Ca and O are found, and the complex inclusion might be brought during the deoxidation and thesolidification in smelting and casting. Non-metallic inclusions result in significant stressconcentration, which cause cracking phenomenon occurring during cold forging of ML25Mn steel
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.324-325.643.pdf
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