ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
In this communication the diffusion of neodymium into rf-sputtered films of tantalum pentoxide (Ta2O5) has been investigated using the SIMS technique. The diffusion characteristics were obtained for a temperature of 1100°C, and the results showed a time-dependent diffusion coefficient that reflects a transition of the sputtered films from the amorphous to the crystalline phase. The potential for doping films of Ta2O5 with neodymium by diffusion, for the realization of novel active optical devices, is also discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1151-2916.2002.tb00501.x
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