ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Buried CdTe/CdMgTe quantum wires with a lateral confinement potential of about 290 meV have been realized. Using electron beam lithography, SiO2 stripes are defined on a single quantum well sample and a subsequent 2 h annealing step in a Zn atmosphere results in a surprisingly strong interdiffusion between Cd and Mg atoms under the capped areas, causing a lateral modulation of the band gap. We obtain, e.g., for a nominal wire width of 100 nm, a lateral subband splitting of more than 8 meV, while the extension of the squared exciton wave function of the ground state is reduced to about 20 nm due to the error function-like potential shape. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1360226
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