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  • 1
    Electronic Resource
    Electronic Resource
    Raman study of the network disorder in sputtered and glow discharge a-Si:H films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5120-5125 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a comprehensive study of the Raman spectra of a-Si:H films produced by the glow discharge (GD) and radio frequency sputtering (RFS) deposition techniques. The results show that the short-range disorder (bond-angle deviation), as measured by the width of the TO band (ΓTO), is larger in RFS than in GD a-Si:H films. The intermediate-range disorder (dihedral angle deviation), as measured by the ratio of the intensity of the TA band to that of the TO band (ITA/ITO), is generally larger in RFS than in GD a-Si:H films. However, while the ITA/ITO values of RFS films remain relatively close to those of GD films when the interior is probed, the near surface of RFS films shows much larger values evidencing the existence of a significant disorder gradient along the growth axis. Together, these results indicate that the network order and homogeneity of RFS amorphous silicon is lower than those of GD for substrate temperatures that produce the hydrogenated material. These structural differences are interpreted in terms of the differences between the two film growth processes and are believed to be the reason for the poorer transport properties of RFS a-Si:H films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359743
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  • 2
    Electronic Resource
    Electronic Resource
    Dependence of the phototransport properties on the position of the Fermi level in polycrystalline CuInS2 films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 876-885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a simultaneous study of the phototransport properties of both the majority and minority carriers in polycrystalline CuInS2 layers. This is done for n-type as well as p-type layers. The dependencies of these properties and their light intensity exponents on the position of the Fermi level yield a picture of the recombination levels and the recombination kinetics in these layers. We show that the simplest model which is consistent with the data is that of a symmetric two-level system. One level is associated with donorlike recombination centers lying around 0.35 eV below the conduction band edge, and the other level is associated with acceptorlike recombination centers lying around 0.35 eV above the valence band edge. This interpretation of the results is shown to be consistent with the luminescence and transport data reported previously on single crystals of CuInS2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360867
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  • 3
    Electronic Resource
    Electronic Resource
    State distribution and ambipolar diffusion length in n-type hydrogenated amorphous silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 215-218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the deep state distribution and the ambipolar diffusion length were carried out on the same n-type a-Si:H materials. It was found that the concentration of active recombination centers [D−] is proportional to N1/2P, where NP is the total concentration of deep states. This result indicates that states other than D− states are present around the midgap of P-doped materials, and that the other states are probably associated with donor-D− pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343908
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  • 4
    Electronic Resource
    Electronic Resource
    Accurate determination of the two carriers steady-state mobility-lifetime products in hydrogenated amorphous silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2204-2207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photocarrier grating (PCG) technique is used for the first time in the high electric field regime. The results are shown to confirm previously unproven theoretical predictions for this regime. It is demonstrated that, by application of the PCG technique in the high-field regime, accurate values for the ratio of the two carriers mobility-lifetime products can be deduced. This is in contrast with the fact that their sum cannot be derived accurately from the measurement of photoconductivity because one cannot determine accurately the carrier generation rate. Combining the ratio, determined by the high field PCG, with the low-field data yields accurate values for the mobility-lifetime products of both carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349459
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  • 5
    Electronic Resource
    Electronic Resource
    Auger electron spectroscopy for quantitative analysis (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 192-194 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple mathematical analysis shows that unless the ratio of the instrumental resolution width to the natural Auger linewidth is less than about 0.3, the measured line intensities do not represent accurately the atomic concentrations. To overcome this difficulty, a universal curve is presented whereby the experimentally measured line intensities can be corrected so as to represent quite accurately the relative atomic concentrations in one's sample. Unfortunately, however, the available sensitivity data required for quantification were not always measured with sufficient instrumental resolution. It is our contention that there is a need for new sensitivity measurements in which the required resolution is ensured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100170
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  • 6
    Electronic Resource
    Electronic Resource
    Crystalline phases at the p- to n-type transition in Cu-ternary semiconducting films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 987-989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here a study of the Raman spectra of ternary Cu–In–S and Cu–In–Se polycrystalline film compounds as a function of the x=[In]/{Cu]+[In]} ratio. Using these spectra we were able to identify, with high resolution in x, the phases present in the films. We found that the single phase of chalcopyrite CnInSe2 exists over the fairly wide composition range of 0.48≤x≤0.55, and that the lattice disorder increases with the increase of In content. No such single phase range was found for the Cu–In–S films. Considering the electrical properties of these materials around x=0.5, it is concluded that the native defect model accounts for the electrical properties of the Cu–In–Se films but does not account simply for the electrical properties of the Cu–In–S films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117104
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  • 7
    Electronic Resource
    Electronic Resource
    Identification of nonambipolar transport in the application of a photocarrier grating to hydrogenated amorphous silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1726-1728 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thus far the many reports concerning the utilization of the photocarrier grating (PCG) method have assumed that ambipolar transport takes place in such a PCG when it is imposed on hydrogenated amorphous silicon (a-Si:H). This assumption, which is decisive in the interpretation of the experimental results in terms of the ambipolar diffusion length, has not been tested thus far. In this letter a corresponding testing criterion is proposed, and it is demonstrated that whenever ambipolarity is lost, the PCG-derived diffusion lengths may be wrong. The finding that ambipolarity is maintained in device quality a-Si:H is shown to confirm the theoretical suggestion that, whenever observed, the ambipolarity in a-Si:H is due to shallow trapping effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106231
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  • 8
    Electronic Resource
    Electronic Resource
    The effect of hydrogen on the network disorder in hydrogenated amorphous silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2803-2805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous Raman scattering studies of the effect of hydrogen on the atomic network disorder in various hydrogenated amorphous silicon (a-Si:H) materials resulted in contradicting conclusions. We resolve these contradictions by showing that the surface and the bulk of a-Si:H films can behave differently due to their different hydrogen contents. In particular, we establish that hydrogen has a relatively moderate effect in improving the short-range order but a profound effect in improving the intermediate-range order of the atomic network. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125155
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  • 9
    Electronic Resource
    Electronic Resource
    High-energy LMM Auger transitions (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 264-268 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: We have recently shown that with the commonly available resolution in Auger electron spectroscopy measurements, significant errors can be incurred in the measured Auger line intensities. To overcome this difficulty, a universal relation has been derived theoretically whereby the experimentally measured line intensities can easily be corrected so as to yield good estimates for the true intensities, i.e. those that would have been measured were the resolution infinitely good. The validity of our correction procedure was recently demonstrated for the high-energy KLL and low-energy LMM lines of Si, Al and Mg as well as for the high-energy LMM and low-energy MNN lines of Cu. In this paper we extend these studies to the high-energy LMM lines of Zn, Ge, Fe, Co and Ni. We present here the intrinsic lineshapes of these lines as well as the Auger sensitivities relative to silver, measured with different resolutions. The correction procedure applied to the data yields the true sensitivities to a good approximation and is therefore important for quantification and for theoretical calculations of Auger Yields.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190151
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  • 10
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    Identification of nonambipolar transport in the application of a photocarrier grating to hydrogenated amorphous silicon (1991)
    American Institute of Physics
    Details
    Publication Date: 1991-09-30
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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