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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 641-645 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond films were grown at temperatures between 1000 and 1400 °C with an oxy-acetylene torch. The growth rates of the {100} and {111} faces were observed to increase through 1400 °C, while the {110} face did not grow above 1400 °C. The quality of all faces deteriorated significantly between 1300 and 1400 °C, as shown by scanning electron microscopy and Raman spectroscopy. The transparency of a film as measured by Fourier-transform infrared spectroscopy was type-IIa quality with very little C–H absorption.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 437-439 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin diamond films were deposited on different substrates at temperatures below 500 °C by a microwave plasma-enhanced chemical vapor deposition system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The addition of oxygen to the gas mixtures was found to be critical for diamond growth at low temperatures. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transparency. The diamond films were also characterized by scanning electron microscopy.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1179-1181 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sol-gel-derived SiO2, borosilicate, and aluminosilicate thin films deposited on silicon and heated for 5 min at temperatures of 1000 °C or lower exhibit dielectric strength as great as 5 MV/cm and interface state densities as low as ∼1×1011/cm2 eV. These values represent significant improvements over previous sol-gel-derived oxides on semiconductors and indicate that sol-gel processing can provide device quality oxides in situations where native oxides are unavailable or exhibit poor dielectric behavior, e.g., amorphous, hydrogenated silicon or III-V compound semiconductors.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 631-633 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin diamond films were deposited on silicon, MgO, fused silica, and soda lime silica glass at low temperature (the lowest temperature ∼365 °C) by microwave plasma-enhanced chemical vapor deposition. The films were identified as diamond by Raman spectroscopy. A Raman peak shift of several wave numbers to either lower or higher wave numbers due to the strain of the film is also observed. The film deposited on glass is highly transparent. The fine faceted crystals in the film are shown in scanning electron microscope micrographs.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1839-1840 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond films were deposited onto (110) single crystal substrates using oxy-acetylene torch deposition at a constant substrate temperature of 1150 °C. Growth-etch cycling of the deposition increased the linear growth rates of the (100) and (111) faces by a factor of 2. The growth-etch films were shown to be less transparent in the infrared than the reference depositions as determined by microfocus Fourier transform infrared spectroscopy. Using the growth-etch technique, the growth rates of the (100), (111), and (110) faces decreased with increasing hydrogen addition to the combustion flame for hydrogen flow rates up to 50% of the acetylene flow rate. The additional hydrogen did not improve the growth-etch films' transparency. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2490-2492 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a novel technique for growth-etch cycling of diamond films deposited with an oxygen-acetylene torch, whereby a spinning wheel with removable teeth periodically disrupts the depositing flame in open atmosphere to allow air etching of a heated substrate. Cycling times as short as 0.02 s, with a growth/etch time ratio of approximately 19, have produced films with macro-Raman peak widths (full width at half-maximum) of approximately 3 cm−1. A predominance of large 100 crystal faces, with dimensions up to 300 μm, is evident in optimized films. © 1994 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial and engineering chemistry 19 (1980), S. 635-638 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 137 (1994), S. 676-679 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular life sciences 39 (1983), S. 998-1000 
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary In light-dark-synchronized male rats the levels of noradrenaline in heart atria were about 3 times that found in heart ventricles. Noradrenaline turnover rate which were about 8–9 fold greater for the atria than for the ventricles displayed a circadian-phase-dependency with increased rates in the dark period in both parts of the rat heart.
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  • 10
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary The arrangement of centromeres, cluster formation and association with the nucleolus and the nuclear membrane were characterized in human lymphocytes during the course of interphase in a cell-phase-dependent manner. We evaluated 3 893 cell nuclei categorized by five parameters. The centromeres were visualized by means of indirect immunofluorescent labeling with anti-centromere antibodies (ACA) contained in serum of patients with CREST syndrome. The cell nuclei were classified as G0, G1, S, G2, Gl1′ and early S′ phase by comparing microscopically identified groups of cell nuclei with flow cytometric determination of cell cycle stage of synchronized and unsynchronized lymphocyte cell cultures. Based on a discrimination analysis, a program was devised that calculated the probability for any cell nucleus belonging to the G0, G1, S, G2, G1′ and early S′ phase using only two microscopic parameters. Various characteristics were determined in the G0, S, and G2 stages. A transition stage to S phase within G1 was detected. This stage shows centromere arrangements not repeated in later cell cycles and which develop from the dissolution of centromere clusters in the periphery of the nucleus during G0 and G1. S phase exhibits various non-random centromere arrangements and associations of centromeres with the nucleolus. G1′ and early S′ phase of the second cell cycle display no characteristic centromere arrangement. The duplication of centromeres in G2 is asynchronous in two phases. For all cell phases a test for random distribution of the centromeres in the cell nucleus was performed. There is a distinct tendency for centromeres to be in a peripheral position during Go and G1; this tendency becomes weaker in S phase. Although the visual impression is a seemingly random distribution of centromeres in G2 and G1′ statistical analysis still demonstrates a significant deviation from random distribution in favor of a peripheral location. Only the early S phase of the second cell cycle shows no significant deviation from a random distribution.
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