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  • 1
    Electronic Resource
    Electronic Resource
    Integrated quantum-well manifold laser (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 961-963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An integrated manifold of quantum-well lasers with up to three quantum wells has been fabricated by metalorganic chemical vapor deposition. cw threshold current densities per well and differential quantum efficiencies are comparable to those for individual devices, and transverse far-field patterns are single lobed. Catastrophic optical damage levels increase with increasing quantum-well count and are substantially higher than those achieved with a single quantum-well laser. Thermal effects in cw operation have been mitigated by using an efficient design with a high characteristic temperature in a low thermal resistance configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343472
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  • 2
    Electronic Resource
    Electronic Resource
    High-performance short-wavelength single quantum well pump lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1246-1247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Performance of graded-index separate-confinement heterostructure single quantum well lasers especially designed for cw optical-pumping applications is reported and is compared to that of conventional double-heterostructure devices. The quantum well devices have the advantage of lower threshold current, higher slope efficiency, and can be operated at longer cavity lengths, leading to lower diode-series resistance and reduced cooling requirements. Quantum wells of aluminum composition ranging from 6.7% to 12% and thicknesses of 12 and 20 nm were investigated. Useful lasing wavelengths between 780 and 820 nm were achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339995
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  • 3
    Electronic Resource
    Electronic Resource
    Photopumped single quantum-well laser structures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4764-4765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amplified spontaneous emission involving the n=1 and n=2 confined states is observed at room temperature in GaAs graded-barrier single quantum-well laser material grown by metalorganic chemical vapor deposition. These no-phonon, parity-allowed emission lines correlate well with computed transition energies.The duality of lines, their strength and sharpness, and the absence of undesirable substrate luminescence permit a specification of the quantum-well width. This validation, in conjunction with other wafer-level evaluations, provides a more complete characterization of laser material intended for fabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340113
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  • 4
    Electronic Resource
    Electronic Resource
    High-power, very low threshold, GaInP/AlGaInP visible diode lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2464-2466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible light (665 nm) laser diodes employing a strained-layer, single quantum well, graded index separate confinement heterostructure were fabricated from epitaxial wafers grown by metalorganic chemical vapor deposition. Threshold current densities for single element, uncoated, broad-area diodes operated cw as low as 425 A/cm2, cw power outputs of 340 mW per facet, and pulsed outputs (100 μs pulse width) of slightly under 1 W per facet were achieved. These power output values are believed to be the highest reported to date for visible light diode lasers, and this cw threshold current density is believed to be, by far, the lowest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104845
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  • 5
    Electronic Resource
    Electronic Resource
    Viable strained-layer laser at λ=1100 nm (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1132-1134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.45Ga0.55As/GaAs/AlGaAs quantum well lasers emitting at 1100 nm have been fabricated and evaluated. These devices, which employ a highly strained quantum well region, exhibit low- (250 A/cm2) threshold current density and excellent reliability both of which were hitherto unattainable at such high In mole fractions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345758
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  • 6
    Electronic Resource
    Electronic Resource
    Single quantum well laser with vertically integrated passive waveguides (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1409-1411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The condition for the fundamental mode operation in a single quantum well laser with vertically integrated passive waveguides has been studied. With proper choice of parameters, transverse beam divergence as low as 19° has been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102483
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  • 7
    Electronic Resource
    Electronic Resource
    Full-aperture, high-power semiconductor laser (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2534-2535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single quantum well laser with a 2-mm-wide aperture has exhibited low threshold current density and nearly 100% packing fraction. The lateral structure relies on epitaxial growth on a corrugated substrate to frustrate radiative lateral processes and it thus eliminates the need for isolation at least for incoherent operation. Threshold current densities are comparable to those for low-power devices, and slope efficiencies remain undiminished to our current limit where 10.7 W per facet is attained. The aperture size is limited only by our fixturing arrangement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101066
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  • 8
    Electronic Resource
    Electronic Resource
    High-power, diffraction-limited, narrow-band, external-cavity diode laser (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1731-1733 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate an external-cavity GaAs/GaAlAs single quantum well diode laser that produces 1.6 W of cw power with 32% overall efficiency in a spectral band of 0.02 nm. Over 0.1 W is measured in a single-frequency, diffraction-limited beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101273
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  • 9
    Electronic Resource
    Electronic Resource
    Quantum well lasers in operation for four years (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2644-2645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs quantum well lasers operating at 808 nm with cw lifetimes exceeding 30 000 h are reported. The devices, grown by metalorganic chemical vapor deposition, were driven at 200 mW total optical power and were not coated. A study of diode configuration shows that longevity is enhanced by using a long cavity and by junction-down mounting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103811
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  • 10
    Electronic Resource
    Electronic Resource
    Carrier recombination rate in GaAs-AlGaAs single quantum well lasers under high levels of excitation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2083-2085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier recombination rate in GaAs-AlGaAs single quantum well layers is investigated using a small-signal technique for carrier densities from 1017 to 1019/cm3. For carrier densities up to mid 1018/cm3, the inverse of the differential carrier lifetime, 1/τd, increases linearly with the carrier density. The differential rate, however, saturates at higher carrier densities and remains nearly constant for carrier densities higher than 1019/cm3. The deviation from the bulk recombination behavior is due to a portion of the injected carriers populating the semicontinuum states where the rate for the radiative transition is much smaller. The experimental data indicate that the runaway increase of threshold current with decreasing cavity length commonly observed in the short-cavity lasers is mainly due to the loss of carrier confinement at high carrier densities rather than due to fast carrier-depleting processes, such as Auger recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102979
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