Publication Date:
2011-12-02
Description:
To prepare high-performance ferroelectric thin films on Si substrates for pyroelectric arrays applications, 0.74Pb(Mg 1/3 Nb 2/3 )O 3 –0.26PbTiO 3 ( PMN–PT ) thin films, with composition beyond morphotropic phase boundary, were deposited by radio-frequency magnetron sputtering. Conductive perovskite La 0.6 Sr 0.4 CoO 3 with resistivity of about 20 μΩ cm was used as a buffer layer between PMN–PT and Pt/Ti/SiO 2 /Si substrates to promote perovskite phase formation for the PMN–PT thin films. The PMN–PT thin films with pure perovskite phase have been obtained at temperatures as low as 500°C, which is compatible with integrated circuits. The ferroelectric, dielectric, and pyroelectric properties of the films were investigated. It is found that the films exhibit a large remnant polarization of 29.2 μC/cm 2 and a high pyroelectric coefficient of 9.4 × 10 −4 C/m 2 K at room temperature. The calculated figures of merit for current responsivity, voltage responsivity, and detectivity are 3.76 × 10 −10 m/V, 0.02 m 2 /C, and 1.29 × 10 −5 Pa −1/2 , respectively. These features suggest the film a promising material for thermal imaging applications based on silicon technology.
Print ISSN:
0002-7820
Electronic ISSN:
1551-2916
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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