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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3447-3450 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The barrier height of Au/InP was measured at various temperatures from Franz–Kelydsh oscillations (FKO) of photoreflectance spectroscopy. It appears that the photoinduced voltage can not be neglected especially at low temperature. The presently observed barrier height temperature dependence confirms the theory of Hecht [M. Hecht, Phys. Rev. B 41, 7918 (1990)]. Also, the mixture between FKO and E0+Δ0 oscillations was observed. The degree of mixture varies with temperature.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4101-4104 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz–Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F(approximate)Fbi−δF/2 when δF(very-much-less-than)Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra. © 2002 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 78-80 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroreflectance (ER) spectra of a surface-intrinsic n+-type doped (100) GaAs have been measured at various polarization angles of the probe beam. Several Franz–Keldysh oscillations were observed above the band-gap energy, thus enabling heavy- and light-hole transitions to be separated by the application of the fast Fourier transform to the ER spectra. From this, the ratios of the amplitudes of the light- to heavy-hole transitions versus angle of polarization were obtained. At a large incident angle (80°), the strength of the field of the probe beam in the normal direction of the sample (Fz) was varied from zero to a larger component. It was found that the ratios increased with increasing Fz which is consistent with the theory that the light-hole transition becomes more enhanced with z-polarized light. © 2002 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2117-2119 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance spectroscopy of the InxGa1−xAs/GaAs single-quantum well system has been measured at several reverse dc bias voltages. The spectrum can be divided into two parts by the photon energy; one belongs to the GaAs bulk transition and the other belongs to the InxGa1−xAs/GaAs quantum well transition. The GaAs transition has shown the Franz–Keldysh oscillations which can be used to deduce the strength of the electric field in the bulk GaAs. On the other hand, the InxGa1−xAs/GaAs quantum well transition has exhibited the quantum confined Stark effect; that is, the transition energy in the quantum well will be redshifted in the presence of an electric field. The field in the quantum well can be estimated from the amount of redshifting and it was found that the built-in field in the quantum well needs to be close to that of GaAs. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 172-174 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the alloy composition of modulation doped AlxGa1−xAs/GaAs heterostructure by Raman scattering and photoreflectance spectroscopy at room temperature. We also demonstrated that Franz-Keldysh oscillations in photoreflectance spectroscopy can be used to evaluate the band gap of semiconductor heterostructure. The band gap measured by Franz-Keldysh oscillations of photoreflectance spectrum is 1.865 eV. The alloy composition calculated from the band gap is 0.30. From the frequency positions of "GaAs-like'' and "AlAs-like'' phonon modes of the Raman scattering data, the value of the alloy composition was evaluated to be 0.29 which is in good agreement with the photoreflectance result. Both values also agree with the target composition in the molecular beam epitaxy growth and the target composition is equal to 0.30. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3599-3606 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral band profiles of the E¯→4A2g and 2A¯→4A2g transitions of Cr3+ in Al2O3, i.e., the commonly known ruby 6943 A(ring) (R1) and 6929 A(ring) (R2) emission lines, in the temperature range 10–300 K were recorded and deconvoluted numerically with excellent accuracy into a Lorentzian (homogeneous) component and a Gaussian component. The Gaussian width was taken as arising from sample inhomogeneity and spectrometer slit function, and as expected was found to be independent of temperature. The Lorentzian width was found to vary with temperature in accordance with the two-phonon relaxation processes reported previously, plus a thermal broadening process. While the former processes were quenched completely as temperature was lowered to about 90 K, the latter process, describable with the Debye–Waller factor, still caused a Lorentzian width of about 0.2 cm−1 (for both R1 and R2 lines) which then leveled out quickly to about 0.1 cm−1 as the temperature was lowered further. For temperatures above 100 K, the positions of the R1 and R2 lines were found to have the same temperature dependence as that reported previously. The use of the temperature dependencies of Lorentzian width and line position for temperature sensing was discussed; such an instrument could indeed be made portable because of the simple optical and electronic systems used in our experiments.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7183-7185 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our photo reflectance (PR) spectroscopy measurements of the δ-doped GaAs film at 300 K reveal many Franz–Keldysh oscillations (FKOs) above the valence band edge, E0 and the spin-orbit split energy, E0+Δ0, which enables us to determine the electric field strength from periods of FKOs provided reduced masses of the electron and holes are known. The reduced masses can be determined unambiguously at E0+Δ0, but not at E0, at which the heavy- and light-hole transitions are degenerate. However, the ambiguity at E0 can be resolved by applying the fast Fourier transform to the PR spectrum to separate the contributions from the heavy and light holes. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6980-6983 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance (PR) spectroscopy of a δ-doped GaAs film has been measured at 300 K. Results reveal many Franz–Keldysh oscillations (FKOs) above the band-gap energy, which will enable the electric-field strength to be determined from the periods of FKOs. Since the photovoltaic effect cannot be neglected in PR measurements when using light as both the pumping and probing beams, it is generally assumed that the modulation field δF is much smaller than the built-in field F so that the periods of the FKOs will not be affected by the pumping beam. However, the induced photovoltage can be over 2/3 of Fermi level at low temperatures and cannot be neglected even at room temperature. Hence, the finite value of δF needs to be taken into consideration. The effect of δF on the shapes of PR is discussed, and it is shown that the FKOs of PR oscillate at a frequency corresponding to F−δF/2. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6500-6503 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance (PR) spectroscopy of the single quantum well InxGa1−xAs/GaAs system has been measured at various temperatures. The selection rules for the interband transitions are Δn=0, where n is the quantum number of the nth subband in the quantum well. The symmetry forbidden transitions (Δn≠0), such as 12H (where mnH denotes transition between the mth conduction to nth valence subband of heavy hole), were often observed in the experiments and it was attributed to the existence of the built-in electric field in the quantum well. In this work, we change the strength of the built-in electric field by varying the temperatures of the samples. By varying the temperatures of the samples, the strength of the field can be changed by the effect of photo-induced voltages. The measured ratios of the intensities of 12H to 11H transitions decrease as the temperatures are lowered. Therefore, the existence of the built-in electric field may account for the observations of the symmetry forbidden transition 12H in the experiments. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 475-477 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance spectroscopy of surface-intrinsic n+-doped (s-i-n+) GaAs has been measured at various power densities (Ppu) of a pump beam. Many Franz–Keldysh oscillations (FKOs) were observed above the band-gap energy, which will enable the electric-field strength (F) to be determined from the periods of the FKOs. Field F thus obtained is subject to photovoltaic effects. In order to reduce the photovoltaic effects from the pump beam, Ppu was kept below 10 μW/cm2 in the previous experiments. Here, we demonstrate that the built-in field can be determined at a larger Ppu by using fast Fourier transform techniques. © 1999 American Institute of Physics.
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