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  • 1
    Electronic Resource
    Electronic Resource
    Structural perfection of InGaAs/InP strained-layer superlattices grown by gas source molecular-beam epitaxy: A high-resolution x-ray diffraction study (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3635-3638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction (HRXRD) studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP strained-layer superlattices grown by gas source molecular-beam epitaxy. X-ray scans were carried out with a compact four-crystal monochromator resulting in a resolution of one molecular layer (∼3 A(ring)), which enables one to observe very small variations in the periodic structure. Sharp and strong higher-order satellite reflections in the XRD profiles were observed indicating smooth interfaces with well-defined modulated structures. Excellent computer simulated fits of the x-ray satellite pattern could be generated based on a kinematical XRD step model which assumes ideally sharp interfaces. Our results demonstrate that HRXRD in conjunction with the kinematical step model provides a powerful tool to evaluate the structural perfection of InGaAs/InP strained-layer superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344072
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  • 2
    Electronic Resource
    Electronic Resource
    Reactive diffusion and superconductivity of Nb3Al multilayer films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 618-619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of A15 Nb3Al have been prepared by reactive diffusion of sputter-deposited Nb/Al multilayers. The diffusion reactions were studied by in situ annealing x-ray diffraction in the temperature range 50–950 °C. Initially the Nb and Al sublayers react to form the phase NbAl3. This interface reaction prevents the formation of the σ-phase Nb2Al, frequently found as a second phase in A15 Nb3Al materials; NbAl3 reacts with the remaining Nb to form the A15 phase. The highest Tc, 16.2 K measured resistively and 15.2 K inductively, was found in a Nb/Al multilayer with an A15 cell parameter a0=5.195 A(ring) which corresponds to ∼20 at. % Al. From a comparison with previous investigations of the Tc dependence on Al concentration and A15 cell parameter, it is concluded that a small amount of the A15 phase has a higher composition of 22–23 at. % Al.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335623
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  • 3
    Electronic Resource
    Electronic Resource
    Anisotropic strain relaxation in buried CoSi2 layers formed by mesotaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 787-791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice mismatch in and out of the orientation direction was measured in layers of CoSi2 grown by high dose implantation and annealing. A comparison of (111), (100), and (110) orientations showed that the lateral mismatches were similar but the perpendicular mismatch increased monotonically through the series. The differences in the degree of relaxation of the three orientations provide a possible explanation for the observed anisotropy in the electrical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345732
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  • 4
    Electronic Resource
    Electronic Resource
    High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1278-1283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices and one InGaAsP/InP superlattice grown by gas-source molecular-beam epitaxy. For comparison, high-resolution diffraction both with a three-crystal geometry and with a four-crystal monochromator was used along with conventional double-crystal x-ray diffractometry. The best resolution in the x-ray satellite patterns was obtained with the four-crystal monochromator, providing a resolution of one molecular layer in the periodicity of the superlattice. The presence of sharp satellite reflections in the x-ray diffraction profiles demonstrate smooth interfaces with well-defined modulated structures which could be derived from a kinematical diffraction step model. For some superlattices, excellent agreement between the step model and the measurements is obtained when the model assumes that each period consists only of the well and the barrier with ideally sharp interfaces. For other superlattices a thin strained layer had to be assumed on either one or both sides of each quantum well. The comparison of these structures demonstrates the extreme sensitivity of the high-resolution method in conjunction with the step model, to study very small modifications in superlattice periodicities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339681
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  • 5
    Electronic Resource
    Electronic Resource
    Modification of intrinsic strain at lattice-matched GaInAs/InP interfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 910-912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated, by high-resolution x-ray diffraction, the presence of strained regions on the scale of about one molecular layer at each interface in lattice-matched GaInAs/InP superlattices grown by gas source molecular beam epitaxy. The existence of these interfacial regions results only from the different group V element in each interface layer of the superlattice and the lack of any significant diffusion between atomic planes during, or subsequent to epitaxy. We have demonstrated that the intrinsic strain at the interfaces of lattice-matched GaInAs/InP superlattices can be modified on the same near molecular layer scale by altering the beam sequence during growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102625
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  • 6
    Electronic Resource
    Electronic Resource
    Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffraction (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1920-1922 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray studies of Ga0.47In0.53As/InP superlattices reveal, for the first time, the presence of an intrinsic interfacial strain at heteroepitaxial interfaces. This strain is produced by an asymmetric ordering of the atomic layers in the leading and trailing interfaces of each quantum well as the result of the normal growth sequence during gas source molecular beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100345
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  • 7
    Electronic Resource
    Electronic Resource
    Kinematical simulation of high-resolution x-ray diffraction curves of GexSi1−x/Si strained-layer superlattices: A structural assessment (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1152-1154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction (HRXRD) measurements of GexSi1−x/Si strained-layer superlattices are carried out using a four-crystal monochromator. A wide asymmetric range of extremely sharp higher order x-ray satellite peaks is observed indicating a well-defined strained-layer superlattice with abrupt interfaces. This is further confirmed by cross-section transmission electron microscopy. Using a kinematical diffraction step model which assumes ideally sharp interfaces, the thickness, strain, and composition of the GexSi1−x well could be extracted. Excellent agreement between measured and simulated x-ray satellite patterns is achieved. These results show that HRXRD together with kinematical simulation provides a powerful tool to evaluate the structural perfection of GexSi1−x/Si strained-layer superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99189
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  • 8
    Electronic Resource
    Electronic Resource
    Critical layer thickness in strained Ga1−xInxAs/InP quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1668-1670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a combination of electrical, optical, and structural characterization techniques to determine the critical layer thickness of strained Ga1−xInxAs/InP quantum wells. Well compositions covering the entire range of strain available, from −3.8% (GaAs) to +3.2% (InAs), were investigated. We find that the critical layer thickness in this material system is unambiguously described by the classical Matthews and Blakeslee force balance model [J. Cryst. Growth 27, 118 (1974)]. Reverse leakage current of strained-well samples grown in a p-i-n configuration is shown to be the most direct and reliable measure of the pseudomorphic limit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102231
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  • 9
    Electronic Resource
    Electronic Resource
    Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 739-741 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the conduction-band offset in strained-layer superlattices of InxGa1−xAs/InP. Admittance spectroscopy was used to measure the activation energy for thermionic emission of electrons over InP barriers in n-type superlattices. Superlattice dimensions and x values were obtained from high-resolution x-ray diffraction and transmission electron microscopy studies. For x=0.37, 0.53, and 0.69, the values obtained for the conduction-band offset are 175±25 meV, 210±20 meV, and 315±25 meV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100878
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical transport and in situ x-ray studies of the formation of TiSi2 thin films on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1100-1102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of TiSi2 thin films on Si has been investigated by in situ x-ray diffraction and electrical transport. The x-ray results show unequivocally that the staging proceeds through two orthorhombic polytypes of TiSi2 according to the sequence: sputter-deposited metallic Ti or TiSix alloy films on Si(001)→TiSi2 (C49 structure)→TiSi2 (C54 structure), with no evidence of lower silicides. Electrical transport shows metallic behavior for all phases and distinctive features in the annealing curves which correlate with the structural transformations. Most important, the resistivity, characteristically very high for the C49 phase, undergoes a precipitous drop at the C49→C54 transition. In the C54 phase when fully annealed the resistivity is 12.4 μΩ cm at room temperature and 0.66 μΩ cm at 4.2 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98753
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