Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1421-1423
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A lateral hot-electron device has been fabricated in a plane of a two-dimensional electron gas. The transfer ratio of the device, α, was studied for different geometrical configurations of the emitter barrier. The maximum transfer ratio was greater than 0.99 at 4.2 K, corresponding to a current gain greater than 100 for devices with base widths of 220 nm. An emission of a single longitudinal optical phonon, by the injected electrons, has been observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101613
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