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  • 1
    Electronic Resource
    Electronic Resource
    GaAs multiple-quantum-well reflector modulators with 4:1 contrast ratios on Si (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 534-536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Considerable modulation ratios are achieved for GaAs multiple-quantum-well reflector modulators grown on Si by inserting an AlAs/AlGaAs dielectric mirror into the device structure. Modulation ratios of up to 4:1 is attained as the external bias voltage is increased to 9 V and the 1C-1HH exciton absorption peak undergoes quantum-confirmed Stark shift. Measurements also indicate that cavity effects arising from the front surface reflection and that of the imbedded dielectric mirror strongly modify the reflectivity spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347702
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  • 2
    Electronic Resource
    Electronic Resource
    A theoretical study of resonant cavity-enhanced photodectectors with Ge and Si active regions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4049-4058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An integration of Ge or Si with compound semiconductors is considered for optical detectors at wavelengths ranging from the visible to 1.55 μm. Both Ge and Si are indirect band gap materials with relatively small absorption coefficients but very long carrier lifetimes. Using a resonant cavity formed by large band gap compound semiconductor mirrors surrounding Ge and Si active layers, high photosensitivity for thin (〈0.5 μm) absorbing layers can be achieved. Two different methods are discussed and compared for the calculation of the photosensitivity of resonant cavity enhanced detectors. The standing wave effect and its dependence on cavity parameters are analyzed. Design rules for such resonant cavity enhanced photodetectors are presented. The spectral response of some device designs to achieve high quantum efficiency and wavelength selectivity has also been theoretically investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350829
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 750-752 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gain and spectral response of heterojunction phototransistors (HPTs) having a thin (0.1 μm) InGaAs strained absorbing layer in the collector has been investigated. Low dark current ∼ 5 pA (1×10−8 A/cm2) and large optical gain as high as 500 were observed. A resonant cavity composed of an AlAs/GaAs buried mirror structure (reflectivity R=0.9) and the epilayer surface (R=0.3) was used to enhance the otherwise small quantum efficiency η (at InGaAs absorption wavelength). For a 1000 A(ring) absorbing layer an improvement of η from 6.7 to 43% (6.4-fold) was demonstrated, in agreement with calculations, through the spectral analysis of the HPTs with and without resonant cavities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103410
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  • 4
    Electronic Resource
    Electronic Resource
    Uniform junction temperature AlGaAs/GaAs power heterojunction bipolar transistors on silicon substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1068-1070 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs/GaAs power heterojunction bipolar transistors on Si substrates exhibiting uniform junction temperature distribution are reported. Owing to a unique device design, the temperature spread across the entire device area is about 1 °C. The device exhibits a common emitter current gain of 20, a maximum collector current of 0.6 A, and a collector base junction breakdown voltage of 25 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104373
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  • 5
    Electronic Resource
    Electronic Resource
    Si as a diffusion barrier for Ge/GaAs heterojunctions (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1673-1675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the electrical characteristics, before and after annealing, of p-Ge/N-GaAs heterojunction diodes to similar diodes which incorporate a nominally 10 A(ring) layer of pseudomorphic Si at the Ge/GaAs interface. Both types of diodes exhibit excellent current-voltage characteristics before annealing. Diodes having no Si interlayer show significant degradation after a 20 min anneal at 640 °C. Diodes incorporating the Si interlayer retain excellent diode characteristics after a 20 min anneal at temperatures as high as 720 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103113
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  • 6
    Electronic Resource
    Electronic Resource
    Photon emission from avalanche breakdown in the collector junction of GaAs/AlGaAs heterojunction bipolar transistors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 374-376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The base-collector junction of GaAs/AlGaAs single heterojunction bipolar transistors has been observed to emit light at avalanche breakdown. The spectral distribution curve exhibits broad peaks at 2.03 and 1.43 eV, with the intensities dependent upon the reverse current. These observations suggest that electrons, excited to the upper conduction band by the field, lose their energy by impact ionizing electron-hole pairs and producing the 2.03 eV light, which corresponds to the threshold energy for electron impact ionization. The band-edge emission is the result of direct-gap free-carrier recombination and self-absorption of the high-energy transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101875
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  • 7
    Electronic Resource
    Electronic Resource
    GaAs-Si heterojunction bipolar transistor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 822-824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs/Si heterojunction bipolar transistor (HBT) structure is proposed having application for high-frequency operation. The structure combines the high-frequency capability of the GaAs/AlGaAs system with the advanced processing technology of Si. The proposed device consists of an n-AlGaAs/p-GaAs emitter and base layers on an n-Si collector with improved junction characteristics at the GaAs/Si heterointerface afforded by thermal annealing. This novel device structure combines the advantages associated with a wide band-gap AlGaAs emitter, the high electron mobility of GaAs, and the substantial reduction in device parasitics accorded the self-aligned structure. Additionally, the proposed device offers the possibility of planar GaAs processing. With the use of a compact transistor model, calculations of the high-speed capability of this transistor are presented. For an emitter-base junction area of 1 μm×5 μm, optimized fmax=108 GHz and fmax=ft=89 GHz were computed for the GaAs/Si HBT, compared to 76 and 62 GHz, respectively, for equivalent GaAs/AlGaAs HBT's.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99295
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical characteristics of p+-Ge/(N-GaAs and N-AlGaAs) junctions and their applications to Ge base transistors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 842-844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of p+-Ge/N-AlGaAs (and N-GaAs) are studied as a function of temperature and current conduction mechanisms are outlined. Junctions with Ge grown on GaAs and AlGaAs show ideality factors of unity and 1.03 at room temperature, respectively. Temperature-dependent current-voltage (I-V) and room-temperature capacitance-voltage (C-V) characterization are employed to determine the built-in voltage (Vbi) of the two diode structures. For Ge/GaAs, a valence-band discontinuity of 0.49±0.05 eV is measured which is in good agreement with the value deduced from photoemission studies. Implications of p+-Ge base in AlGaAs/Ge/GaAs double-heterojunction bipolar transistors (DHBTs) are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102679
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  • 9
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 94-96 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time large excitonic absorption at room temperature in AlGaAs/GaAs multiple quantum well structures grown on Si substrates in a p-i-n configuration, using photocurrent measurements. We demonstrate an optical reflection modulator which is based on the quantum-confined Stark effect and exciton broadening with a reverse bias voltage applied across the p-i-n structure. A 7.7% change in the reflectivity of the device with 6 V reverse bias voltage was observed. These results demonstrate clearly that optical device quality AlGaAs/GaAs is obtainable directly on Si substrates which has great implications with regard to the monolithic integration of optical III-V and electronic Si technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100359
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  • 10
    Electronic Resource
    Electronic Resource
    Wavelength demultiplexing optical switch (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1797-1799 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel wavelength demultiplexing optical switch (WDMOS) with completely optical input/output capabilities is demonstrated. The WDMOS input elements can be applied to optical logic circuits in which discrete wavelengths are utilized as an added dimension to the intensity levels of the optical signals. The WDMOS can be viewed as a resonant cavity-enhanced heterojunction phototransistor vertically integrated with a quantum well light emitting diode. The resulting device is an N-p-n-p optical switch situated in an optical cavity which serves to combine the wavelength selective spectral response of the optical cavity with the bistable switching characteristics of the N-p-n-p structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107168
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