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  • 1
    Electronic Resource
    Electronic Resource
    Visible wavelength (6470 A(ring)) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7124-7129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown GaxIn1−xP multiple quantum wires (MQWR) on ternary GaAs0.66P0.34 substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of ∼300 A(ring). Two dimensions of quantum confinement were obtained by surrounding the laterally confined GaxIn1−xP regions by layers of higher-energy-gap Al0.15Ga0.53In0.32P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the GaxIn1−xP MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363725
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  • 2
    Electronic Resource
    Electronic Resource
    Origin of n-type conductivity of low-temperature grown InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 600-602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown with correlated magnetic resonance and electrical measurements that the PIn antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the PIn antisite is resonant with the conduction band, which makes the material n-type conducting due to autoionization of the PIn antisite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357052
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  • 3
    Electronic Resource
    Electronic Resource
    Optimization and characterization of interfaces of InGaAs/InGaAsP quantum well structures grown by gas-source molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2889-2891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the interfaces of InGaAs/InGaAsP quantum wells (QWs) grown by gas-source molecular beam epitaxy. By optimizing the group-V source supply sequence, a photoluminescence (PL) linewidth as narrow as 6.6 meV has been observed from a 2 nm wide single QW. The PL linewidths have been analyzed to evaluate the contributions of alloy compositional scattering and interface roughness. The analysis shows that for QW structures grown with the optimized growth sequence, the PL linewidth is mainly due to alloy compositional variations, whereas the contribution from interface roughness is small, indicating a good interface control. By considering the strain effect on the band alignment of the InGaAs/InGaAsP heterojunction, theoretical transition energies of QWs have been calculated using the envelope-function approximation, and the results agree well with the experimental data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360032
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  • 4
    Electronic Resource
    Electronic Resource
    N incorporation in InP and band gap bowing of InNxP1−x (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1934-1936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The N incorporation behavior in InP grown by gas-source molecular beam epitaxy using a N radical beam source has been investigated. At a given growth temperature, the N composition in InNxP1−x is generally different from the N2 flow-rate fraction in the vapor phase, and as the N2 flow-rate fraction increases, it saturates after increasing to a certain point. This may be due to the small solubility of N in InP. Increasing the growth temperature will result in a loss of N incorporation into the InP as a result of the faster desorption of the N at high temperatures. Optical absorption measurements reveal that the band-gap energy of InNxP1−x decreases drastically, resulting in band-gap bowing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362945
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  • 5
    Electronic Resource
    Electronic Resource
    Optical property of InAsP/InP strained quantum wells grown on InP (111)B and (100) substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4673-4679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsP/InP strained multiple quantum wells (MQWs) were grown on InP (111)B and (100) substrates by gas-source molecular-beam epitaxy. Specular surfaces were obtained under optimized growth conditions on InP (111)B substrates miscut 1° to the 〈110〉 direction. Photoluminescence, absorption and photoluminescence excitation spectra were taken for InAsP/InP strained MQWs at low temperature. Distinct optical transitions were resolved. Energy-level calculations were carried out for both (111)B and (100) MQWs by taking into account the differences in elastic deformation, strain-induced band-edge shift, valence-band anisotropy, and the piezoelectric effect. The peaks were successfully assigned as different interband excitonic transitions. The best fit of the energy-level calculation to the experimental spectra suggests that the valence-band offset ratios (Qv=ΔEv/ΔEg) for (111)B and (100) InAsP/InP heterostructures are 0.35 and 0.30, respectively. This dependence on the substrate orientation was accounted for in terms of the strain-induced band-edge shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355920
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  • 6
    Electronic Resource
    Electronic Resource
    Shallow donors and D-X centers neutralization by atomic hydrogen in GaAlAs doped with silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 207-210 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen plasma exposure of silicon-doped Ga1−xAlxAs epilayers with x〈0.37 causes a strong reduction of the free-electron concentration in the layers. For x〈0.29, this effect is accompanied by a simultaneous increase of the electron mobility. This is interpreted, as in GaAs, in terms of a neutralization of the active silicon donors by atomic hydrogen. The neutralization efficiency of the shallow donors increases as x increases. For x(approximately-equal-to)0.25, the D-X centers are very efficiently neutralized by hydrogen and, as a consequence, the conductivity mechanisms after exposure are only governed by the remaining shallow donors. For 0.29〈x〈0.37, most of the D-X centers are neutralized, but the electron mobility after hydrogenation is reduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341464
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogenation of shallow-donor levels in GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2821-2827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow-donor levels due to Si, Ge, Sn, S, Se, and Te in GaAs are neutralized by association with atomic hydrogen; Si and Te donors in AlGaAs have also been shown to be neutralized. In contrast, the shallow acceptors Be, Mg, Zn, and Cd in GaAs are relatively unaffected by hydrogenation. The activation energy for recovery of the donor electrical activity is around 2.1 eV for each of the species, but varies as the strength of an isolated hydrogen-donor species bond. The neutralization depth of the donors is proportional to the inverse square root of donor concentration, and this depth is given as a function of plasma exposure temperature (100–350 °C) and bonding site density (8×1013–1.5×1018 cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336964
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  • 8
    Electronic Resource
    Electronic Resource
    Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2128-2130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The profiles of AlGaAs/GaAs heterostructures grown by gas-source molecular beam epitaxy (GSMBE) on patterned substrates at different growth temperatures have been studied. It was found that at higher substrate temperature, the GSMBE growth results in Al clustering and the formation of high index planes. With a proper combination of low growth temperature and etched profile, a quasiplanarized surface is obtainable. A process simulation program is found to be capable of simulating the GSMBE growth profile at lower substrate temperature with reasonable accuracy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354739
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  • 9
    Electronic Resource
    Electronic Resource
    Interband transitions in InAsxP1−x/InP strained multiple quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1645-1647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical study of the interband transitions in InAsxP1−x/InP strained-layer multiple quantum wells grown by gas-source molecular beam epitaxy. Low-temperature photoluminescence, photoluminescence excitation, and room temperature photomodulated transmission measurements were performed to investigate optical interband transitions. In addition to transitions associated with the heavy-hole and the light-hole bands, a transition involved with the spin-orbit split-off band was observed. We also observed spectral linewidth broadening due to compositional inhomogeneity and layer-thickness fluctuations from the sample using short-period superlattices as the well materials. Calculations based on the envelope-function approximation and phenomenological deformation potential theory, including both band nonparabolicity and strain-induced valence-band mixing, were compared with experimental data to identify the optical transitions between quantized states in the wells. We found good agreement between theory and experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351683
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of interface intermixing and roughening in low-temperature-grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x-ray diffraction (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3491-3493 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on the interface quality in undoped, AlAs/GaAs multiple quantum well (MQW) structures grown at a low substrate temperature (310 °C) by molecular beam epitaxy has been investigated using chemical lattice imaging and high resolution x-ray diffraction. The low-temperature-grown MQW is of high crystalline quality comparable to the standard-temperature-grown MQW. However, significant interface roughening and intermixing occurs at the quantum well heterointerface when the structures are annealed beyond 700 °C. The effective activation energy for interdiffusion is estimated as 0.24±0.07 eV. The structural properties observed here suggest that the excess arsenic associated with the low-temperature growth substantially enhances the diffusion of column III vacancies across an interface, which leads directly to intermixing of Al and Ga. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115257
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