ISSN:
0887-6266
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Physics
Notes:
Organic semiconductor devices using electrochemically prepared poly(N-methylpyrrole) (PNP) were characterized by capacitance-voltage (C-V) measurements. A device with aluminum evaporated on the PNP behaved as a MOS (metal-oxide semiconductor) diode in vacuum. Assuming the oxide layer between the metal and the PNP to be pure Al2O3, the MOS parameters were calculated. The values obtained for depletion width W = 166 Å and acceptor density NA = 1018 cm-3 in the PNP were reasonable by comparison with the previously reported values obtained by Schottky analysis. An indium/poly(p-phenylene)-1,3,4-oxadiazole (POD)/PNP diode was prepared, and C-V measurements were carried out in air. The diode behaved like an MIS (metal-insulator semiconductor) device, but the characteristics showed large variation with frequency. We have proposed a schematic model for this mechanism on the basis of the results obtained by dielectric measurements of POD and the temperature dependence of the MIS characteristics.
Additional Material:
11 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/polb.1988.090260810
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