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  • 1
    Electronic Resource
    Electronic Resource
    Guiding-center-drift resonance of two-dimensional electrons in a grid-gate superlattice potential (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2945-2947 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the low-field magnetoresistance of the two-dimensional electron gas in GaAs/〈m1;&33〉AlxGa1−xAs in the presence of a two-dimensional lateral surface superlattice (2D LSSL) potential, and observed, for the first time, the guiding-center drift resonance, previously reported for one-dimensional LSSL structures. The 2D LSSL potential is created by applying a voltage Vg to a 200 nm period grid-gate structure fabricated on top of the sample and can be tuned continuously from being repulsive to attractive by tuning Vg.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104730
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  • 2
    Electronic Resource
    Electronic Resource
    Low-frequency noise in transport through quantum point contacts (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 774-776 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the noise characteristics of quantum point contacts between 100 Hz and 100 kHz at 4.2 K. The noise consists of a 1/f component on top of a white background. The 1/f noise increases as the contact width decreases and shows peaks between the quantized resistance plateaus. The white noise background increases with current but is much lower than the full shot noise level, suggesting that shot noise is not generated in an ideal quantum point contact, where the electrons do not suffer backscattering as they enter and traverse the contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104094
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  • 3
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxy regrowth of two-dimensional electron gas on GaAs patterned by in situ meltback (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2455-2457 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective in situ meltback of V-groove channels followed by liquid phase epitaxial regrowth of a modulation-doping AlGaAs layer is used to produce a two-dimensional electron gas on a patterned GaAs substrate. The in situ meltback patterning of the substrate forms channels made up of definite crystallographic planes. Characterization of the two-dimensional electron gas by magnetotransport measurements in a tilted magnetic field at 4.2 K confirms that the electron gas exists on all the planes that comprise the channels. Since the regrowth surface is exposed neither to air nor chemical etchants, this technique holds promise of producing high quality interfaces on patterned GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103876
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  • 4
    Electronic Resource
    Electronic Resource
    Resonant tunneling of two-dimensional electrons into one-dimensional subbands of a quantum wire (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1440-1442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid phase epitaxy regrowth on the edge of in situ cleaved substrates is employed to create a vertical two-dimensional electron gas in a double-barrier tunneling potential. Resonant tunneling of two-dimensional electrons through one-dimensional quantum wire subbands is unambiguously identified by negative differential resistance features in the transport characteristics. The bias positions of these features agree with simple tunneling theory estimates based on conservation laws and the calculated band alignment in the structure under bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105192
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  • 5
    Electronic Resource
    Electronic Resource
    Two-color corrugated quantum-well infrared photodetector for remote temperature sensing (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 7-9 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum-well infrared photodetector (QWIP) based on the corrugated light-coupling scheme has been fabricated and tested for remote temperature sensing. The QWIP consists of two stacks of multiple quantum wells (MQWs), each sensitive in one of the atmospheric infrared transmission windows and each with a separate readout circuit. High optical coupling efficiency is obtained in both wavelength ranges, demonstrating the use of the corrugated structure for two-color detection. By monitoring the ratio of the photocurrent generated simultaneously in each MQW stack, the temperature of the object emitting the radiation can be determined, regardless of its emissivity and the geometrical factors. This temperature sensing ability is tested by using a blackbody radiator with precision temperature control as the target. The agreement between the measured and the preset temperatures indicates that the corrugated QWIP is capable of precision thermometric measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120629
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  • 6
    Electronic Resource
    Electronic Resource
    Corrugated quantum well infrared photodetectors for normal incident light coupling (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1446-1448 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report a quantum well infrared photodetector geometry for normal incidence light coupling. The new optical coupling scheme utilizes total internal reflection at the sidewalls of triangular wires to create favorable optical polarization for infrared absorption. These wires are created by chemically etching an array of V grooves through the detector active region along a specific crystallographic direction. Experimental results from the initial single color as well as two-color detectors with linear wires and unthinned substrate show efficient light coupling comparable to the standard 45° edge coupling, without the undesirable wavelength dependence or spectral narrowing effect of a conventional grating structure. At the same time, the dark current density is substantially reduced due to the partial material removal. Further improvement is expected by creating a two-dimensional coupling structure with substrate thinning. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116249
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  • 7
    Electronic Resource
    Electronic Resource
    Electron focusing with multiparallel one-dimensional channels made by focused ion beam (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 385-387 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron focusing effect is observed in a two-dimensional electron gas using samples with simple multiparallel one-dimensional channels made by a Be focused ion beam (FIB). Subharmonics and harmonics are resolved; their strengths allow a direct determination of the elastic scattering length le =1.8 μm and the specularity coefficient p=0.35 for electron reflection at the boundary defined by the FIB. The temperature dependence of the focusing effect is much weaker than the Shubnikov–de Haas effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102793
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  • 8
    Electronic Resource
    Electronic Resource
    Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 666-668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cyclotron resonance of the two-dimensional hole gas (2DHG) in the strained-layer quantum well structure of In0.20Ga0.80As/GaAs is observed in far-infrared transmission measurements made at 4.2 K. The cyclotron mass of the 2DHG in the In0.20Ga0.80As channel is (0.191±0.008)me for a 2D hole density p2D =8.5×1011/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101816
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  • 9
    Electronic Resource
    Electronic Resource
    Two-dimensional electron system with extremely low disorder (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2080-2082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of modulation-doped GaAs/AlxGa1−x As heterostructures with extremely low disorder by molecular beam epitaxy. In growing these structures we employed the atomic plane doping technique and ultrathick (〉1000 A(ring)) spacer layers with graded composition. The structures have mobilities (μ) on the order of 1×106 cm2/V s (at 4.2 K) for areal densities (ns) as low as 4×1010 cm−2. Quantum transport measurements in these structures exhibit new fractional quantum Hall states and demonstrate their exceptionally high quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100306
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  • 10
    Electronic Resource
    Electronic Resource
    Threshold transport of high-mobility two-dimensional electron gas in GaAs/AlGaAs heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1533-1535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the conductivity of the high-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures at low temperatures as a function of the carrier density (n) close to the conduction threshold. We find that metallic conduction persists to n∼1.4×1010 cm−2, and that the mobility drops much faster than that expected from impurity scattering for n below a characteristic density, which decreases with increasing AlGaAs spacer thickness. This behavior is explained by the effect of the 2DEG density fluctuations at low n close to the conduction threshold, first predicted by Brews' theory [J. Appl. Phys. 46, 2181 (1975)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99948
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