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  • 1
    Electronic Resource
    Electronic Resource
    Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 275-277 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron-beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115661
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of a magnetic field on the stability of the flow of molten material in laser cutting processes (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2780-2790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this analysis, the generalized kinematic equation for the thickness of the molten film is derived by perturbation methods and the method of multiple scales is used to investigate the weakly nonlinear stability of the flow of molten material in laser cutting under a transverse uniform magnetic field, taking into account the effect of phase change at the liquid–vapor interface. Analysis of the linear stability of the molten layer shows that the optimum cutting speed can be increased through use of the magnetic field. Nonlinear stability analysis further shows that supercritical stability and subcritical instability exist in the laser cutting system with or without magnetic effect. In a magnetic field, the equilibrium amplitude of high cutting speeds decreases, and the minimum threshold amplitude increases at low cutting speeds. The effect of the magnetic field, measured by the Hartmann number (m) is to stabilize the flow regardless of the cutting speed value or gas velocity. An appropriate applied magnetic field improves the laser cutting process and counteracts surface roughness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366109
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  • 3
    Electronic Resource
    Electronic Resource
    Sub-10 nm lithography and development properties of inorganic resist by scanning electron beam (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3064-3066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the self-developing properties of an AlF3-doped LiF inorganic resist under irradiation by a scanning electron beam with an energy of 20–50 keV are reported. The self-development properties strongly depended on both AlF3 concentration and film thickness. To explain this behavior, we presented an exposure model that takes into account a balance between a carbon contamination and a diffusion process. By optimizing resist qualities, we were able to delineate 5 nm linewidth patterns with 60 nm periodicity using a 30 kV electron beam. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114279
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  • 4
    Electronic Resource
    Electronic Resource
    Spiral growth of C60 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1008-1010 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed the spiral growth of C60 grown on cleaved graphite using atomic force microscopy. Triangular terraces in the spirals consist of a monolayer of C60 having a 10 A(ring) step height which agrees well with (111) lattice constant of fcc-C60. One of the characteristic features of the C60 spiral is the presence of a line defect running from the spiral core and crossing the spiral terraces. As a result, the original helicoid plane transforms into a stack of terraces. We think the C60 spiral growth is terminated by the introduction of a line defect at the early stages of the film growth, resulting from the weak van der Waals forces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109879
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  • 5
    Electronic Resource
    Electronic Resource
    Metallic resistively coupled single-electron transistor (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 132-134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and measured transport properties of resistively coupled single-electron transistors (R-SETs). In our version, a chromium thin-film resistive strip served as a gate and was connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx/Al tunnel junctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulomb blockade pattern was observed. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data and indicate excessive electron temperature of the devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122973
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  • 6
    Electronic Resource
    Electronic Resource
    Aluminum single-electron nonvolatile floating gate memory cell (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2038-2040 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed an aluminum single-electron transistor device which was modified to incorporate an additional floating node in between the gate and the electrometer. At high gate voltages, Fowler–Nordheim type emission occurred between the gate and the floating node where the charges were stored. The emission events were evidenced by the oscillatory electrometer current which allowed estimation of the number of storage electrons. We demonstrated experimentally the nonvolatile memory function of this device and the results were justified by numeric simulations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119780
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  • 7
    Electronic Resource
    Electronic Resource
    Single-electron memory using carrier traps in a silicon nitride layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3555-3557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron memory that utilizes carrier traps in a silicon nitride layer is proposed and experimentally demonstrated. The proposed device consists of an insulating three-layered memory node structure formed on a silicon substrate and a highly sensitive aluminum single-electron transistor that detects the written information. Successful memory operation is demonstrated with two types of write modes (slow/rapid) that depend on the state of the Si channel underneath. Carrier retention time is estimated to be around 45 min. Possibilities for both destructive and nondestructive readout are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124159
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  • 8
    Electronic Resource
    Electronic Resource
    Room-temperature Al single-electron transistor made by electron-beam lithography (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2256-2258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a lithographically made Al single-electron transistor that shows gate modulation at room temperature. The temperature dependence of the modulation agrees with the orthodox theory, however, energy-level quantization in a tiny metallic island affects the device characteristics below 30 K. The charge-equivalent noise of the device at 300 K was measured to be ∼4×10−2 e/Hz1/2 at 1 Hz and is expected to be 1000 times lower in the white-noise regime at higher frequencies. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126313
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  • 9
    Electronic Resource
    Electronic Resource
    Single artificial-atom lasing (2007)
    [s.l.] : Nature Publishing Group
    Nature 449 (2007), S. 588-590 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Solid-state superconducting circuits are versatile systems in which quantum states can be engineered and controlled. Recent progress in this area has opened up exciting possibilities for exploring fundamental physics as well as applications in quantum information technology; in a series of ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature06141
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  • 10
    Electronic Resource
    Electronic Resource
    Demonstration of conditional gate operation using superconducting charge qubits (2003)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 425 (2003), S. 941-944 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Following the demonstration of coherent control of the quantum state of a superconducting charge qubit, a variety of qubits based on Josephson junctions have been implemented. Although such solid-state devices are not currently as advanced as microscopic qubits based on nuclear magnetic ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02015
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