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  • 1
    Electronic Resource
    Electronic Resource
    Theoretical determination of the crystalline packing of chain molecules (1981)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 85 (1981), S. 1371-1380 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150610a021
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  • 2
    Electronic Resource
    Electronic Resource
    Dielectric properties of polypyrrole doped with tosylate anion in the far infrared and microwave (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 899-905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the dielectric behavior in the far infrared (10–200 cm−1) and in the microwave (8.5–12.5 GHz) regime for the conducting polypyrrole (PP) doped with tosylate anion. The dielectric constants have been determined from reflection and transmission data using the Fresnel equations. The magnitude and dispersive nature of the complex index of refraction is described for a number of samples with different levels of conductivity. The ability to tailor the dielectric behavior of these materials has been demonstrated by suitably reducing the oxidized PP films. The high reflectivity in the far infrared and microwave region cannot be accounted for in terms of the Drude model defining metallic behavior. An application exploiting the large real part of the index of refraction and relatively low loss observed in the microwave region is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347331
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  • 3
    Electronic Resource
    Electronic Resource
    Schottky diodes using poly(3-hexylthiophene) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2957-2958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier diodes have been fabricated using poly(3-hexylthiophene)(P3HT) as the semiconductor and indium as the metal. P3HT was doped with FeCl3 at room temperature to form a p-type semiconductor. The Schottky junctions of In on FeCl3-doped P3HT using pressure contact exhibit rectification ratios ranging from 104:1 to 106:1 at a bias of ±1 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355319
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  • 4
    Electronic Resource
    Electronic Resource
    Micro-Raman scattering in laterally epitaxial overgrown GaN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5840-5852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, micro-Raman spectroscopy has been used to investigate the vibrational properties of laterally epitaxial overgrown (LEO) GaN. The LEO GaN films were grown by metal organic chemical vapor deposition on a 2 in. sapphire substrate with SiN mask. Photoluminescence and polarized Raman scattering measurements have been performed in the two regions of GaN growth (wing and window regions). Raman scattering results are consistent with the lateral growth of GaN in the overgrown region. We have observed second-order Raman scattering in the wing and window regions of GaN. The observations of longitudinal optical phonon plasmon modes in the overgrown region demonstrate that LEO GaN is doped. We have carried out micro-Raman mapping of the local strain and free carrier concentration in the LEO GaN. Anharmonicity due to temperature in LEO GaN has also been investigated. The anharmonicity was found to increase with increasing temperature, and such temperature-induced anharmonicity introduces changes in the linewidth and line center position of the Raman active phonons. The phonon lifetimes in GaN are estimated in the LEO region as well as in the coherently grown region (window region). © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467952
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3398-3407 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a systematic study of the effects of wet chemical treatment, inductively coupled plasma etching, and thermal annealing on the surface and optical properties of Mg-doped p-type GaN. The chemical bonding and surface stoichiometry of the GaN surface subjected to different processing steps are analyzed based on the results of x-ray photoelectron spectroscopy. Atomic force microscopy has been employed to characterize the surface morphology. Photoluminescence (PL) and micro-Raman techniques have been used to investigate the electronic and vibrational properties of plasma etched surface. We have correlated the surface changes induced by dry etching of p-type GaN to the corresponding changes in the defect and impurity related states, through their manifestation in the PL spectra. We have observed several local vibrational modes (LVMs) in p-type GaN subjected to various processing steps. A broad structure in the low-temperature Raman spectra around 865 cm−1 is attributed to the electronic Raman scattering from neutral Mg acceptors. In addition to the LVMs of Mg–Hn complexes, two new modes near 2405 and 2584 cm−1 are observed from the etched p-GaN surface. We have also carried out PL and micro-Raman analyses of Mg-doped GaN films annealed under different conditions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446236
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  • 6
    Electronic Resource
    Electronic Resource
    Laser-induced holographic surface relief gratings on nonlinear optical polymer films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1166-1168 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report observation of holographic surface relief gratings with relatively large amplitude on a second order nonlinear optical polymeric material. Surface relief gratings on these polymer films were created upon exposure to polarized Ar+ laser beams at 488 nm without any subsequent processing steps. The surface structure of the relief gratings was investigated by atomic force microscopy. The depth of the surface relief in a typical case was 120 nm which is approximately 20% of the original film thickness. The diffraction efficiency of gold-coated gratings was investigated as a function of wavelength and capability of recording orthogonal gratings on the same film was demonstrated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113845
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  • 7
    Electronic Resource
    Electronic Resource
    Large and stable second harmonic generation in a crystalline phase of a ferroelectric liquid crystal (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1443-1445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second harmonic generation (SHG) has been studied in a nitro-substituted ferroelectric liquid crystal cooled from the smectic-C* into a three-dimensional crystalline (K) phase in an applied electric field. The SHG efficiency in the K phase is found to be deff(approximately-greater-than)4.5 pm/V, about 25 times the value in the SmC* phase, and, unlike the SmC* case, remains constant in zero field for (approximately-greater-than)25 h. A quantitative analysis of the polarization dependence of the SHG reveals that the dominant d coefficients contributing to the measured signal differ for the two phases, and that the orientation of the liquid-crystal director in the K phase is modulated in one dimension. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113648
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  • 8
    Electronic Resource
    Electronic Resource
    Polarization dependent recordings of surface relief gratings on azobenzene containing polymer films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2618-2620 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies on the recording of surface relief gratings on azobenzene containing polymer films using laser beams with different polarizations were carried out. The results indicate that the localized variations of light intensity and alternation of the resultant electric field polarization in the film are essential to the formation of the surface relief gratings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116200
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  • 9
    Electronic Resource
    Electronic Resource
    Photoassisted poling induced second harmonic generation with in-plane anisotropy in azobenzene containing polymer films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3629-3631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoassisted poling of azobenzene containing polymer films at room temperature using polarized Ar+ laser beam as pump light was studied. Irradiating the films with p-polarized pump light at an incident angle to the normal during the poling process, second harmonic generation with in-plane anisotropy could be induced. Second order nonlinear optical coefficient, d33, of the poled sample was measured to be 20 pm/V. The second harmonic generation properties induced by photoassisted poling and thermal assisted poling were compared. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117005
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  • 10
    Electronic Resource
    Electronic Resource
    Poly(heterocycle) Langmuir-Blodgett films (1989)
    s.l. : American Chemical Society
    Langmuir 5 (1989), S. 1288-1292 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00090a002
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