ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The photoluminescence (PL) of the UD-4 defect is observed in semi-insulating bulk 4H,6H and 15R SiC. In 4H and 6H SiC the UD-4 defect consists of two families of no-phonon (NP) lines,Ua and Ub, and in 15R SiC it consists of three families, Ua, Ub and U15R. The Ua family in 4H, 6Hand 15R all show similar temperature behavior with higher energy NP lines becomming observable athigher temperatures. In the case of the Ub and U15R families, a luminescence line with lower energythan the prominent luminescence line appears at higher temperatures. The polarization and Zeemanmeasurements suggest that the defect has C3v symmetry
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.397.pdf
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