ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The special features of redistribution of phosphorus implanted into silicon wafers with a high concentration of boron (N B=2.5×1020 cm−3) were studied. It is shown that, in silicon initially doped heavily with boron, the broadening of concentration profiles of phosphorus as a result of postimplantation annealing for 1 h in the temperature range of 900–1150°C is significantly less than in the case of lightly doped silicon. The results are interpreted in terms of the impurity-impurity interaction with the formation of stationary boron-phosphorus pairs. The binding energy of boron-phosphorus complexes in silicon was estimated at 0.6–0.8 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188043
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