Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 1800-1802
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Cu films were formed on Si(100) substrates using three different methods: physical vapor deposition (PVD), ion beam assisted deposition (IBAD), and a combined IBAD-PVD technique. ε-phase (Cu15Si4) was formed directly at the interface of the 14 keV Ar+ IBAD Cu film (350 nm) and the Si substrates during the deposition processes. In the combined film [IBAD Cu (20 nm)+PVD Cu (350 nm)] no new phase was observed until the sample had undergone an annealing treatment (300 °C 30 min), in which the ε phase was formed. The phase sequence of the Cu-Si system in combined films of our experiments is quite different from those observed in a typical annealing process. From discussion the nucleation of ε phase is the key factor to obtain a thermodynamically stable phase at the Cu-Si interface during the annealing process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111812
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