ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
State-of-the-art technologies of GaN-based power switching transistors are reviewed, inwhich normally-off operation and heat spreading as technical issues. We demonstrate a new operationprinciple of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GITutilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electrondensity in the depleted channel resulting in dramatic increase of the drain current owing toconductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0Vwith high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) andoff-state breakdown voltage (BVds) are 2.6mΩ·cm2 and 800V, respectively. These values are the bestones ever reported for GaN-based normally-off transistors. In addition, we propose the use ofpoly-AlN as surface passivation. The AlN has at least 200 times higher thermal conductivity thanconventional SiN so that it can effectively reduce the channel temperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1257.pdf
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