Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 794-796
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on nonalloyed ohmic contact to n+-GaAs ((approximate)2×1018 cm−3) with a Ti-based metal/ultrathin GaS ((approximate)15 nm)/GaAs quasi-metal-insulator-semiconductor (QMIS) structure. The GaS film was grown by molecular beam epitaxy employing the precursor, tertiarybutyl-galliumsulfide-cubane ([(t-Bu)GaS]4). For Au/Pt/Ti/GaS/n+-GaAs QMIS structure, the as-deposited contact resistivity of low 10−2 Ω cm2 was improved to 4.1×10−6 Ω cm2 by low-temperature annealing at 300 °C for 10 min. With annealing, we observed the formation of TiGaS on GaAs, but did not see any alloying reaction between GaAs and metals and sulfur diffusion into GaAs. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122004
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