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  • 1
    Electronic Resource
    Electronic Resource
    Strain-induced insulator–metal transition and room-temperature colossal magnetoresistance in low-doped La1−xBaxMnO3 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6275-6279 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetotransport properties in low-doped La1−xBaxMnO3 thin films were investigated. The bulk La1−xBaxMnO3 (x=0.05 and 0.1) compounds are insulating, but an insulator–metal transition was observed in the strained thin films deposited on SrTiO3(100) substrates. At x=0.05, magnetization measurements revealed a transition from spin canting in bulk to ferromagnetic order in thin film. Moreover, a large magnetoresistance effect was obtained in the thin film with x=0.1 at room temperature and in a low magnetic field. A strain-induced modification of eg orbital stability was proposed to explain these properties. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416866
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation of crystallized zinc oxide films on amorphous glass substrates by pulsed laser deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 787-791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc oxide (ZnO) films with c-axis orientation have been prepared on glass substrates by pulsed laser deposition with an ArF excimer laser. The fluctuations of c-axis orientation of the ZnO films are evaluated by full width at half-maximum (FWHM) of the rocking curve of the x-ray diffraction. The ZnO films with a FWHM of 1.9° can be obtained on the optimum conditions (substrate temperature of 500–600 °C, O2 gas pressure of 2–6×10−4 Torr) even at a thickness of 200 nm. We have observed the crystallization of the ZnO during film formation by using in situ reflection high energy electron diffraction. It is confirmed that ZnO thin films with a thickness of up to about 50 nm have c-axis orientation on the glass substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362887
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of carrier doping level on the photo control of (La, Sr)MnO3/SrTiO3 functional heterojunction (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4578-4582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a junction system which consists of ferromagnetic- (La1−xSrx)MnO3 and band insulating-SrTiO3, the double exchange ferromagnetism in the (La, Sr)MnO3 layer was controlled by light irradiation through photocarrier injection form SrTiO3. We investigated the dependence of hole doping level (Curie temperature) on the photo control of the (La, Sr)MnO3/SrTiO3 heterojunction. Whereas magnetization and conductivity of the heterojunction with TC of 240 K is strongly reduced, including from metal–insulator transition, by light irradiation, that with TC of 280 K cannot be modulated. This result indicates that phase boundary, between the metallic and insulating region on the (La1−xSrx)MnO3 phase diagram, plays an important role in photo carrier control of the functional heterojunction. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410328
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of magnetic exchange interactions in La(Sr)MnO3/LaMO3 (M=Fe,Cr,Co,Ni) artificial superlattices and their magnetic/ electrical properties (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1559-1565 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated conductive-ferromagnetic [(La0.8Sr0.2)MnO3/antiferromagnetic-[LaFeO3] spin-frustrated superlattices and insulative-ferromagnetic [La1−δMnO3]/magnetic [LaMO3] (M=Ni,Co,Cr,Fe) superlattices through accurate unit cell control (1–10 units) using a laser-molecular beam epitaxy technique. In [(La,Sr)MnO3]m/[LaFeO3]n superlattices, it has been observed that resistivity is increased and TC is reduced from 270 to 130 K when the antiferromagnetic layer is increased. Metal–insulator transition occurred systematically in a series of superlattices (m=2) with n increasing from 1 to 3 unit cells. This can be explained by spin frustration induced by the neighboring antiferromagnetic spin order. This colossal magnetoresistance effect is enhanced by up to 35% in a magnetic field of 1.0 T. In [LaMnO3]1/[LaMO3]1 superlattices, reduction (M=Cr,Fe) and enhancement (M=Co,Ni) of TC have been observed. We propose an expression for TC on the basis of the molecular field image and demonstrate that the ferromagnetism is systematically affected by the neighboring magnetic layers via the interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373855
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of artificial BaTiO3/SrTiO3 superlattices using pulsed laser deposition and their dielectric properties (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1970-1972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have formed strained dielectric superlattices of BaTiO3 (BTO) and SrTiO3 (STO) by a pulsed laser deposition technique. A large strain of 400–500 MPa is introduced at the interface between the BTO and STO layers. A large dielectric constant of 900 was observed with a stacking periodicity of 2 unit cells/2 unit cells. The superlattices show drastically different electrical behavior from that of the solid solution (Sr,Ba)TiO3 films. Broad maxima of the dielectric constants occur around 40–50 °C and the values remain large even for a temperature above 200 °C. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112837
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  • 6
    Electronic Resource
    Electronic Resource
    Photoinduced ferroelectric hysteresis curve in organic CuPc photoconductor/inorganic BaTiO3 ferroelectric heterojunction photomemory (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1318-1320 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoinduced switching of the ferroelectric P–E hysteresis curve has been achieved in organic photoconductor (PC) copper phthalocyanine (CuPc)/inorganic ferroelectric (FE) BaTiO3 (BTO) heterojunction photomemory in the visible ray region. Light irradiation could switch the remanent polarization of ferroelectric BTO in this heterojunction up to 3 μC/cm2, almost full remanent polarization of BTO single layer, whereas remanent polarization of that without light irradiation was almost zero. We have also investigated the effect of CuPc thickness on the photoinduced change of ferroelectric P–E hysteresis curve, and found that the insulating dark resistance of the organic photoconductor CuPc film layer plays an important role for high efficiency of PC/FE heterojunction photomemory. The efficiency of this heterojunction photomemory reached up to 500%. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1500772
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  • 7
    Electronic Resource
    Electronic Resource
    Photocarrier injection effect on double exchange ferromagnetism in (La, Sr)MnO3/SrTiO3 heterostructure (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3245-3247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a (La1−xSrx) MnO3/SrTiO3 heterostructure and measured the temperature dependence of magnetization and resistivity under white light irradiation. We found that increased resistivity and a decrease of the metal-to-insulator transition temperature by 10 K occur under illumination of light at a wavelength below 400 nm. In particular, an additional photoinduced metal–semiconductor transition is observed below 100 K with decreased magnetization. This behavior can be explained by considering that the hole concentration in the (La1−xSrx) MnO3 layer decreases owing to electron injection following the photoexcitation of SrTiO3. We also confirmed electron injection along a perpendicular direction to the heterostructure using current–voltage measurement. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126595
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  • 8
    Electronic Resource
    Electronic Resource
    Control of electrical conduction in DNA using oxygen hole doping (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1670-1672 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using oxygen adsorption experiments on poly (dG)-poly (dC) DNA molecules, we found that their conductance can be easily controlled by several orders of magnitudes using oxygen hole doping, which is a characteristic behavior of a p-type semiconductor. It also suggests that the conductance of the DNA under doping results from charge carrier transport, not from an ionic conduction. On the other hand, we will also show that the poly (dA)-poly (dT) DNA molecules behave as an n-type semiconductor. This letter demonstrates that the concentration and the type of carriers in the DNA molecules could be controlled using proper doping methods. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456972
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  • 9
    Electronic Resource
    Electronic Resource
    Artificial construction of SrO/(La, Sr)MnO3 layered perovskite superlattice by laser molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3618-3620 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of layered perovskite (La, Sr)3Mn2O7 have been artificially grown by atomic-layer stacking of SrO and (La, Sr)MnO3 [artificial SrO/(La, Sr)MnO3 superlattice] using laser molecular-beam epitaxy on an SrTiO3(001) substrate at low processing temperature. Reflection high-energy electron diffraction patterns indicate the flat surface of the films and the layer-by-layer growth mode. X-ray diffraction patterns confirm that c-axis-oriented Ruddlesden–Popper layered (La, Sr)3Mn2O7 thin films can be grown at a substrate temperature as low as 580 °C. The resulting film exhibited ferromagnetism with a Curie temperature of 75 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126725
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  • 10
    Electronic Resource
    Electronic Resource
    Blockade of RAGE–amphoterin signalling suppresses tumour growth and metastases (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 405 (2000), S. 354-360 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The receptor for advanced glycation end products (RAGE), a multi-ligand member of the immunoglobulin superfamily of cell surface molecules, interacts with distinct molecules implicated in homeostasis, development and inflammation, and certain diseases such as diabetes and Alzheimer's ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35012626
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