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  • 1
    Electronic Resource
    Electronic Resource
    Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2901-2909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial silicon oxide present at the Ni–Si interface hampers the silicidation between Ni and Si. In this work we present findings of the interaction of a Ti cap layer on top of Ni to remove the interfacial native oxide and chemically grown silicon oxide at several annealing temperatures. It was found that at 500 °C, Ti diffuses through the Ni layer and segregates at the Ni/Si interface, which subsequently reduces the interfacial silicon oxide and enables nickel monosilicide (NiSi) formation at 600 °C. The thickness of the Ti cap layer was found to strongly influence the temperature of the onset of nickel silicidation. A thin Ti cap layer resulted in the onset temperature of nickel silicidation being the same as that without a Ti cap layer, whereas a thick Ti cap layer lowered the onset temperature of the nickel silicidation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448672
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  • 2
    Electronic Resource
    Electronic Resource
    Modeling the electromagnetic excitation of a compact ECR ion/free radical source (abstract)a) : Proceedings of 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1312-1312 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The electromagnetic excitation of a discharge inside a microwave plasma source has been numerically modeled in the time domain. The source is a cylindrical, single-mode microwave-excited cavity. The time-varying electromagnetic fields inside the resonant cavity, both inside and outside the discharge region, are obtained by applying a finite-difference time-domain method to solve Maxwell's equations. The electromagnetic properties of the discharge load are described using a conductivity model. The spatial electric field patterns, natural frequencies, stored energy, and quality factor of a plasma-loaded, microwave-resonant cavity are simulated. Additionally, the simulated results for a simplified plasma source structure are compared to a known analytical solution to verify the simulation technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144993
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  • 3
    Electronic Resource
    Electronic Resource
    Modeling the electromagnetic excitation of a compact ECR ion/free radical sourcea) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1761-1765 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The electromagnetic excitation of a discharge inside a microwave plasma source has been numerically modeled in the time domain. The source is a cylindrical, single-mode microwave-excited cavity. The time-varying electromagnetic fields inside the resonant cavity, both inside and outside the discharge region, are obtained by applying a finite-difference time-domain method to solve Maxwell's equations. The electromagnetic properties of the discharge load are described using a conductivity model. The spatial electric field patterns, natural frequencies, stored energy, and quality factor of a plasma-loaded, microwave-resonant cavity are simulated. Additionally, the simulated results for a simplified plasma source structure are compared to a known analytical solution to verify the simulation technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144874
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  • 4
    Electronic Resource
    Electronic Resource
    New SiGe dielectrics grown at room temperature by low-energy ion beam oxidation and nitridation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2031-2033 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New dielectric materials based on SiGe have been formed at room temperature by direct ion beam oxidation and nitridation. Si0.8Ge0.2 layers were deposited by molecular beam epitaxy on Si(100) and then exposed to a low-energy ion beam of 18O+2 to form oxides and 14N+2 to form nitrides. The ion energies investigated ranged from 100 eV to 1 keV. Thin films of SiGe oxide and SiGe nitride were formed at all energies used as evidenced by in situ x-ray photoelectron spectroscopy analysis. They were found to be insulating by ex situ scanning electron microscopy observations. During the ion beam processing, the Ge content of the alloy layer decreases, due to preferential sputtering of Ge and the Ge compounds. However, as the ion energy is decreased, the concentration of Ge in the alloy remains closer to the original content. The thermal stability of these new SiGe dielectrics was also assessed up to 500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106122
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  • 5
    Electronic Resource
    Electronic Resource
    Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3207-3209 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gate leakage behavior in AlGaN/GaN heterostructure field-effect transistors was studied as a function of applied bias, temperature, and surface periphery. A surface hopping conduction mechanism with an activation energy of 0.21 eV is proposed for the gate–drain leakage for voltages that exceed pinchoff. The reverse breakdown voltage of the device exhibited a negative temperature coefficient of −0.11 V K−1, suggesting that a breakdown mechanism other than impact ionization, such as thermal runaway, may be responsible. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1473701
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  • 6
    Electronic Resource
    Electronic Resource
    Photonic band gaps and flat band edges in periodically textured metallic microcavities (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 193-195 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dispersion of optical modes in metallic microcavities is shown to be dramatically altered when wavelength-scale periodic texture is added to one of the cavity mirrors. We demonstrate that Bragg scattering of the cavity modes by such microstructure produces near-flat bands that remain significantly flat well away from the first Brillouin zone boundary. The electric fields associated with these modes are studied and are found to have field maxima that are enhanced over those pertaining to planar microcavities. The impact of this band structure upon emissive devices, especially in terms of the clear insensitivity to viewing angle, is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126921
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  • 7
    Electronic Resource
    Electronic Resource
    The effect of induced spatial incoherence on the absolute Raman instability (1991)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 776-780 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical and analytical study of the Raman instability in a homogeneous plasma is presented in which the pump has been modeled to include the effects of broad bandwidth and the induced spatial incoherence (ISI) method of beam smoothing. For a time-averaged homogeneous growth rate γ¯0 and a bandwidth σ, there is a significant reduction in Raman backscattering when σ(approximately-greater-than)2γ0, for γ¯20 near threshold intensity. However, for γ¯20 very large compared to the threshold, neither ISI nor bandwidth affects Raman scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859873
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of nitrogen limitation on water relations of jack pine (Pinus banksiana Lamb.) seedlings (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 18 (1995), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: The water relations of shoots of young jack pine (Pinus banksiana Lamb.) seedlings were examined 6 and 15 weeks after the initiation of four different dynamic nitrogen (N) treatments using a pressure-volume analysis. The N treatments produced a wide range of needle N concentrations from 12 to 32 mg g−1 dry mass and a 10-fold difference in total dry mass at 15 weeks. Osmotic potential at full turgor did not change over the range of needle N concentrations observed. Osmotic potential at turgor-loss point, however, declined as N concentrations decreased, indicating an increased ability of N-deficient jack pine plants to maintain turgor. The increase could be attributed largely to an increase in cell wall elasticity, suggesting that elasticity changes may be a common, significant adaptation of plants to environmental stresses. Dry mass per unit saturated water almost doubled as needle N level dropped from 32 to 12 mg g−1 and was inversely correlated to the bulk modulus of elasticity. This suggests that cell wall elasticity is determined more by the nature of its cross-linking matrix than by the total amount of cell wall material present. Developmental change was evident in the response of some water relation variables to N limitation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1995.tb00578.x
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  • 9
    Electronic Resource
    Electronic Resource
    Sequence placement planning for high-speed PCB assembly machine (2002)
    Bradford : Emerald
    Integrated manufacturing systems 13 (2002), S. 35-46 
    Details
    ISSN: 0957-6061
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Economics
    Notes: In order to handle high and rapid production demands, printed circuit board (PCB) manufacturers have employed high-speed surface mount machines into their assembly lines. These machines have abilities of fast component placements, but provide challenges for process engineers to optimise the component placement sequences and feeder arrangements via effective planning. A computer program was developed based on operating concepts using genetic algorithm, to solve for various component placement sequencing planning of the high-speed chipshooter. Genetic algorithms are a class of general purpose search methods based on the concepts of genetic evolution and survival of the fittest. The program provides information on component placement sequences and feeder arrangements for optimal assembly times. Initial tests have shown that the size of the parent space affects the convergence of the solutions during iterations. Finally, comparisons of results have shown improvement over those previously obtained by other researchers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/09576060210411495
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  • 10
    Electronic Resource
    Electronic Resource
    Construction and economic development - The case of Singapore
    Amsterdam : Elsevier
    Habitat International 17 (1993), S. 75-87 
    Details
    ISSN: 0197-3975
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geography , Sociology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0197-3975(93)90030-G
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