ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Potential role of atomic carbon in diamond deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6941-6947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a numerical simulation of the gas-phase chemistry in diamond deposition processes. The simulation shows that the concentration of the two potential growth species CH3 and C in the boundary layer near the diamond film substrate are sensitive to these species' concentration in the bulk gas. The concentrations in the bulk gas depend, in turn, on the physical arrangement of the reactor, and in particular on the time provided for the gas mixture to reach chemical equilibrium. With sufficient equilibration time, simulations of both a hot-filament reactor and a plasma torch reactors show that the concentration of atomic carbon at the substrate surface can be much higher than the concentration of CH3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355043
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Amorphous carbon films deposited from carbon ions extracted from a discharge in fullerene vapor (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4223-4229 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (a-C) films with physical properties ranging from diamond like to graphite like were deposited at rates of 1 μm/h under 10−6 Torr vacuum by extracting a molecular carbon ion beam from a pure carbon discharge in fullerene vapor. With ion energies fixed near 300 eV, substrate temperature and beam neutralization were the main process parameters controlling film properties. a-C stress and density increased with decreasing deposition temperature, ranging to greater than 3 GPa and 2.9 g/cm3, respectively. Room temperature conductivity ranged from 10 to 10−11(Ω cm)−1, with cool substrates and a well neutralized ion beam producing the most insulating films. a-C conductivity increased irreversibly after imposition of electric fields exceeding 108 V/m through the film planes. The high conductivities of films deposited without a beam neutralizer are attributed to phase changes resulting from dielectric breakdown driven by electric fields induced by surface charging. Conductivity data obtained for films deposited at different temperatures are discussed in the context of activated conduction, variable range hopping, and multiphonon assisted hopping transport processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373056
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Matching the resistivity of Si:Nb thin film thermometers to the experimental temperature range (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5367-5368 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The useful temperature range of semiconducting resistive thermometers is limited by declining sensitivity at high temperature and inconveniently high resistivity at low temperatures. The useful temperature range of sputtered thin film Si:Nb resistance thermometers is controlled by the Nb concentration. We have developed a simple technique for controlling the Nb concentration during the fabrication process. We describe an extremely sensitive family of thermometers with useful temperature ranges that overlap and span temperatures from below 1 K to above 450 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146114
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Measurement of thermal diffusivity of small, high conductivity samples using a phase sensitive technique (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3601-3605 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a phase sensitive technique for measuring the thermal diffusivity of thin samples which is particularly useful for high conductivity materials such as diamond. The technique is based on a relationship between the experimentally determined frequency dependent phase shift of a thermal wave, and the geometry and thermal diffusivity of the sample. Our analysis correctly describes the phase shift for both thermally thick and thermally thin samples, which greatly expands the useful frequency range of phase shift measurements. The experimental apparatus consists of common laboratory electronics, is relatively easy to implement, and is useful over a wide range of temperatures. Measurements on glass, copper, and diamond samples at room temperature show that the accuracy and precision of the technique compares favorably with standard methods. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145475
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Ion-beam deposition of hard, amorphous carbon from a fullerene discharge (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 541-549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design and operation of an ion source that uses fullerene molecular solid as a feedstock of pure carbon is described. Fullerenes were vacuum sublimed and directed into a discharge plasma, which resulted in dissociation of the fullerenes into molecular carbon fragments. Molecular carbon ions extracted from the discharge impinged energetically upon a substrate and condensed into a thin film of hard, amorphous carbon at growth rates of approximately 1 μm/h. For fixed ion energies of 300 eV, substrate temperature was an important process parameter, affording a means for tuning the physical properties of the films. For deposition temperatures ranging from 250 to 575 K, room-temperature dc resistivity ranged from 105 to 10−2 Ω cm. The more resistive films, deposited at lower temperatures, were infrared transparent and showed no evidence of discrete absorption due to either C-H stretching modes or fullerenes. Broad band tails were observed in the resistive films, with optical gaps of 1.1 eV. The optical gaps of the conductive films were below 0.1 eV. Activation energies of conduction were extracted from the temperature dependance of the film resistivities. Both the resistive and conductive films displayed two activation energies in the range 77 to 650 K, with room temperature the demarcation between low-temperature values of tens of meV and high-temperature values of tenths of an eV. The resistivity and infrared transmission data were interpreted as evidence for the growth of sp2-bonded regions with increased deposition temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360638
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    High-frequency structural relaxation in supercooled liquids (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 1170-1176 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High-frequency structural relaxation in glass forming solutions of LiCl in water was studied using complex conductivity measurements in the frequency range 0.5 MHz to 32 GHz for temperatures between 300 and 160 K. The conductivity data show a low-frequency plateau, and a strong frequency dependence above a characteristic frequency. Both the low-frequency conductivity and the characteristic frequency decrease strongly with temperature, scaling approximately as the inverse of the viscosity, suggesting that hydrodynamic processes govern structural relaxation. The ionic conductivity can be related to the mechanical properties using the Stokes–Einstein relation. The frequency dependence cannot be understood in terms of a single viscoelastic relaxation time. A semiphenomenological version of the mode coupling theory of supercooled liquids, using the experimentally determined temperature dependence of the static viscosity as a parameter describes the frequency dependence of the data reasonably well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454236
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Direct and thermal desorption of ^4He films
    Amsterdam : Elsevier
    Physics Letters A 95 (1983), S. 59-62 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(83)90782-X
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Wetting transitions of helium on weak binding substrates
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 197 (1994), S. 283-289 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(94)90224-0
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Phonon focusing catastrophes
    Amsterdam : Elsevier
    Solid State Communications 33 (1980), S. 1191-1194 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(80)90788-7
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Phonon reflection at noble gas interfaces
    Amsterdam : Elsevier
    Solid State Communications 38 (1981), S. 215-218 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(81)91140-6
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...