ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
By measuring visible AlGaAs/AlGaInP vertical-cavity surface-emitting lasers (VCSELs) and similar edge-emitting lasers (EELs) as a function of temperature and pressure, we study the contributions of electron leakage and gain-cavity detuning on the threshold current, Ith, of VCSELs. In the EELs, leakage accounts for ∼20%Ith at room temperature, rising to ∼70%Ith at 80 °C. Similarly, leakage accounts for almost all of the increase in the VCSEL Ith above −100 °C and limits the cw output power. At low temperature or high pressure, however, the VCSEL Ith increases sharply due to misalignment of the gain peak to the high-energy side of the cavity mode. Under normal operating conditions, carrier leakage has the greatest effect on the VCSELs with gain-cavity detuning only becoming important at very low temperatures. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1342049
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