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  • 1
    Electronic Resource
    Electronic Resource
    Reconstruction of in-plane magnetization distributions from magnetic force microscope images (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7230-7232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A three-step method is proposed for reconstructing the in-plane magnetization distribution from a magnetic force microscope (MFM) image. The magnetization distribution is initialized using some assumptions based on our knowledge about domain structures and MFM contrast mechanisms. Then the high-energy moment configurations, which are initialized based on linear variation assumption, are relaxed by performing a micromagnetic calculation using experimentally measured magnetic parameters. A section of a 360° wall in a NiFe/NiO bilayer has been selected to illustrate the reconstruction procedures. It is shown that the method is effective in revealing the wall structure related to the MFM contrast. This method avoids problems caused by noise and nonunique solutions of the micromagnetic equations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355338
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  • 2
    Electronic Resource
    Electronic Resource
    Spin fanning configurations in antiferromagnetic layers with a uniaxial anisotropy and torque transfer characteristics from top to bottom spins (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4940-4942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin configurations along the thickness direction generated in antiferromagnetic (AF) layers with an in-plane uniaxial anisotropy have been calculated by numerical method. It is confirmed that when the bottom-surface anisotropy energy constant is less than 1/4 of 180°-wall energy density, σw, a sudden change or switch of the spin configuration occurs at a critical angle of the top spins when the AF-layer thickness, t, is greater than a critical value, tc. This means that no hysteresis occurs with a rotation of the top spin for t〈tc. Spin configurations with a folded or periodic structure which Néel discussed have been revealed to be unstable without microscopic defects or irregularities which pin the spin angle at some depth from the top surface. It is found that when the bottom-surface anisotropy is lower than 1/4σw, the torque sustainable by the top-surface spins does not exceed 1/2σw. It is also found that the effect of top-spin rotation penetrates substantially down as deeply as a few times the 180°-wall thickness. The effect of the AF-easy axis tilting out of the plane has also been studied. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370052
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical and numerical model for estimating unknown magnetic parameters in studying ferromagnetic and antiferromagnetic coupled films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6202-6204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method of estimating unknown magnetic parameters for coupled thin films of ferromagnetic and antiferromagnetic materials is introduced. It combines convenient torque and spin angle measurements with strength of mathematical models and numerical techniques. Description of this approach is outlined and test results for several simulated examples are presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370221
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  • 4
    Electronic Resource
    Electronic Resource
    A metal plasma source ion implantation and deposition system (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1816-1820 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article presents a metal plasma source ion implantation and deposition system, which is a qualitative extension of plasma source ion implantation by combining pulsed metal plasma and steady-state gas plasma. The pulsed metal plasma is produced by pulsed cathodic arc discharge and the steady-state gas plasma by magnetic multipole filament discharge. The existence of gas plasma greatly facilitates the breakdown of the pulsed cathodic arc plasma source, which does not need the conventional trigger system. Some operation characteristics of this system were measured. It was shown that the cathodic arc plasma parameters depend strongly on gas pressure. 0.45% C steel was modified in nitrogen plasma and pulsed aluminum plasma. The corrosion resistance ability of the treated 0.45% C steel sample was increased by about 30 times over that of the untreated sample. AlN/Al2O3/Al composite film was deposited on 0.45% C steel using a glow-arc technique. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149674
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  • 5
    Electronic Resource
    Electronic Resource
    Threshold behavior in backgating in GaAs metal–semiconductor field-effect transistors: Induced by limitation of channel–substrate junction to leakage current (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 511-515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model is proposed to understand backgating in GaAs metal–semiconductor field-effect transistors (MESFETs), in which the effect of channel–substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000–4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364129
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  • 6
    Electronic Resource
    Electronic Resource
    A nonvolatile ferroelectric memory device with a floating gate (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3275-3276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An adaptive ferroelectric field-effect transistor (FET) with a floating gate has been developed using a thin film of lead titanate ( PbTiO3) deposited on a n/p+ substrate by rf sputtering. This device utilizes the charge storage on the floating gate to control the n layer conductivity of a n/p+ Si substrate and performs a memory function, in which the drain conductance changes in proportion to the charge storage density on the floating gate. The device is a bulk channel field transistor structure and different from the conventional surface channel-type floating gate memory device. Thus, it possesses higher mobility and fast access time (〈160 ns). The FET has low write/erase voltages (≤10 V) and its write/erase cycles are more than 106. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118034
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  • 7
    Electronic Resource
    Electronic Resource
    Experimental characterization and modeling of a ferroelectric bulk channel field effect transistor with nonvolatile memory characteristics (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 812-814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ferroelectric bulk channel field effect transistor has been developed using a thin film of lead titanate (PbTiO3) deposited on a n/p+ Si substrate by rf sputtering, in which the drain conductance changes in proportion to the remanent polarization of PbTiO3 thin film induced by the gate pulse voltage. Since the remanent polarization will stay a long time after the gate voltage is removed, the device possesses the memory characteristics. The device is a bulk channel structure and different from the reported surface channel type ferroelectric field effect transistor. Therefore, it possesses higher mobility. In this letter, current–voltage curves have been shown to compare with the theoretical analysis. The fit is quite good. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117900
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  • 8
    Electronic Resource
    Electronic Resource
    An infrared optical field effect transistor with high speed response (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 299-300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An infrared optical field effect transistor has been developed using a thin film of lead titanate (PbTiO3) deposited on a n/p+ Si substrate by rf sputtering, in which the drain conductance changes in proportion to the infrared light power. A fast response with a rise time of 2.3 μs has been obtained that is about 150% faster than the other types of thermal infrared optical field effect transistor. The developed infrared sensor is a bulk channel field effect transistor structure, that possesses higher mobility. Thus, faster speed can be obtained. In addition, the sensor has been prepared on a Si substrate, which offers the potential to develop Si-based infrared optical-electric integrated circuits. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116065
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  • 9
    Electronic Resource
    Electronic Resource
    Molecular structure of selected S-methylthiophenium tetrafluoroborates and dibenzothiophene 5-oxide (1981)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 103 (1981), S. 289-295 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00392a007
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  • 10
    Electronic Resource
    Electronic Resource
    ICP-MS ANALYSIS OF BASALT BIR-1 FOR TRACE ELEMENTS (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Geostandards and geoanalytical research 18 (1994), S. 0 
    Details
    ISSN: 1751-908X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: The concentrations of 27 trace elements in the basalt BIR-1, as well as in other mafic rock reference materials, have been determined by ICP-MS, using pure elemental solutions for external calibration and standard additions. Concentrations of rare earth elements in BIR-1 for the new ICP-MS data, agree with compiled values, and previous ID-SSMS results, whereas ICP-MS data on HFSE's are systematically higher by about 40% to 70% than ID-SSMS, but are consistent with data generated at other ICP-MS laboratories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1751-908X.1994.tb00504.x
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