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  • 1
    Electronic Resource
    Electronic Resource
    On Hall scattering factors for holes in GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1913-1915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall scattering factors for electrons and holes in molecular beam epitaxial GaAs layers have been determined by comparing carrier concentrations measured by the Hall effect with those measured by the electrochemical capacitance–voltage technique. The conclusion is that both the electron and hole scattering factors are near unity for n ranging from 2×1016 to 7×1017 cm−3, and p ranging from 5×1016 to 4×1019 cm−3. This conclusion is consistent with the present theory for electrons, but not with that for holes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363007
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  • 2
    Electronic Resource
    Electronic Resource
    Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 328-331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conventional Hall-effect determination of the two-dimensional electron gas (2DEG) concentration n2D in pseudomorphic high electron mobility transistor structures is invalid because of interference from the highly doped GaAs cap. Furthermore, the usual methods of dealing with this cap-interference problem, namely, (1) etching off the cap totally, (2) etching the cap until the mobility reaches a maximum, or (3) growing a separate structure with a thin, depleted cap, in general, give n2D values that are too low. However, we show here that magnetic-field-dependent Hall (M-Hall) measurements can separately determine the carrier concentrations and mobilities in the cap and 2DEG regions, as verified by comparison with a self-consistent, four-band, k⋅p calculation and also by electrochemical capacitance-voltage measurements in structures with different cap and spacer thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357148
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  • 3
    Electronic Resource
    Electronic Resource
    Moving photoluminescence bands in GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 504-508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the excitation intensity dependent photoluminescence properties of GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates. Photoluminescence consists of the bound exciton and the quasi-donor-acceptor pair transitions for the layers in the range of 0.26≤x≤0.94. The concentration modulation produced by the relaxation of the misfit strain between the epitaxial GaAs1−xSbx layer and InP substrate is responsible for the quasi-donor-acceptor pair transition. A large Stokes shift between the photoluminescence transition of the bound exciton and the band gap determined by the optical absorption measurements is also consistent with our model of concentration modulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357102
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 540-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal "square'' In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360862
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  • 5
    Electronic Resource
    Electronic Resource
    Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1029-1032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been performed on Si-doped GaAs layers grown by molecular-beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×1016 cm−3 is believed to be related to the AsGa-associated 0.65 eV Hall-effect center, and also to the trap EB4 found in electron-irradiated GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357846
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  • 6
    Electronic Resource
    Electronic Resource
    A comparison of electrochemical capacitance-voltage measurements with numerical simulations for pseudomorphic high electron mobility transistor structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2531-2536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrochemical capacitance-voltage (EC-V) profiling is simulated numerically and the results compared with EC-V measurements for AlxGa1−xAs/InyGa1−yAs pseudomorphic high electron mobility transistor (p-HEMT) structures. The electrostatic potential is calculated at each etch step by solving the Poisson equation subject to surface pinning. The mobile charge is calculated within the Thomas-Fermi approximation. The calculated potential then forms the basis for the numerical EC-V, enabling the capacitance and apparent electron concentration to be computed. The reconstructed electron distribution has been compared with actual EC-V measurements on actual p–HEMT structures. The results affirm the ability of experimental EC-V to separate detailed features in the electron distribution, such as electrons localized in the δ layer and channel of p–HEMTs. Essentially, the reconstructed electron distribution is a warped version of the true distribution as determined from a self-consistent k⋅p calculation. In δ-doped p–HEMTs, for example, the separation between the charges in the δ layer and channel is less than the actual separation. This trend appears to agree with measured EC-V results. Subject to control over the etching uniformity, experimental EC-V should be capable of delineating detailed features in the electron distribution. Numerical EC-V has also been compared with standard capacitance-voltage (C-V) profiling. The reconstructed numerical C-V electron distribution agrees well with the numerical EC-V distribution. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360108
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  • 7
    Electronic Resource
    Electronic Resource
    Erratum: "Photoluminescence of Mg-ion implantation in low-temperature grown GaAs'' [J. Appl. Phys. 75, 2628 (1994)] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2563-2563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358543
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of Mg-ion implantation in low-temperature grown GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2628-2632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence properties of Mg-ion implanted layers of low-temperature (179–400 °C) grown molecular beam epitaxial GaAs are reported. The Mg incorporation into the Ga site mainly produces the Mg-related donor-acceptor pair transition. The Mg incorporation depends strongly on the growth temperature of the layers. Mg trapping at defect centers formed by the excess As increases exponentially with the increase of the reciprocal growth temperature and is the dominant mechanism for the failure of Mg to incorporate into the Ga site. The possibility of the trapping center for Mg being the Asin-related defect originating from As-rich growth of low temperature GaAs is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356238
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  • 9
    Electronic Resource
    Electronic Resource
    Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 329-337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We quantify the rates and total amounts of the arsenic for antimony exchange on both the Sb-terminated and Ga (or In)-terminated GaSb (001) surfaces using in situ real time line-of-sight mass spectrometry (LOS-MS) during molecular beam epitaxy. On the Sb-terminated GaSb (001) surface, an As for Sb exchange is observed to occur at all values of incident As2 flux considered. At high substrate temperature, three-dimensional (3D) nanometer-sized clusters from as a consequence of As/Sb exchange and lattice mismatch strain between GaAs and GaSb. The 3D clusters are found to have lateral dimensions of ∼10–30 nm and heights of 1–3 nm by atomic force microscopy (AFM). By contrast, at lower substrate temperatures a two-dimensional surface morphology is maintained, and AFM reveals an array of atomically flat terraces. On the surface terminated by one monolayer (ML) of Ga or In, there exists a critical As2 flux below which the As/Sb exchange is greatly diminished. The net amounts of Sb leaving the surface during one period of InAs/GaSb type-II superlattice growth are measured in real time by LOS-MS and estimated to be in the range of 0–0.4 ML for the various conditions used. By supplying only an As2 beam to a GaSb surface covered by InAs, the Sb riding over the InAs layer is replaced by arsenic and the total amount of such Sb is measured. The amount of Sb riding on the InAs can be as large as 0.8 ML for the first 1 ML of InAs and it gradually decreases to zero as the number of InAs monolayer increases. X-ray diffraction data show that all the InAs/GaSb superlattices coherently match with the GaSb substrate in the growth plane. The average lattice constant along the growth direction reduces with decreasing Sb mole fraction shown by the increased Sb desorption signal. Using the information on As/Sb exchange and Sb riding on the InAs surface, we predict an average lattice constant along the growth direction to be consistent with the measured one to within 2×10−4. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370733
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4765-4767 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical barrier height measurements on n+-GaAs–insulator–n-GaAs structures with short-period AlAs/GaAs superlattices forming the insulator show the effective conduction-band discontinuity (ΔEC) of a superlattice barrier (SLB) to be defined by the lowest superlattice energy state. Five structures with different AlAs and GaAs SLB layer thicknesses are investigated. A SLB with GaAs layers greater than 10 monolayers is found to have a ΔEC defined by Γ-valley states in the GaAs layers, while a SLB with GaAs and AlAs layers less than 10 monolayers and with thicker AlAs layers than GaAs layers is found to have a ΔEC defined by X-valley states in the AlAs layers. The SLB with GaAs and AlAs layers less than 10 monolayers and thicker GaAs layers than AlAs layers behaves as a random alloy. Negative differential resistance is observed in the current-voltage characteristic of the sample whose barrier height is defined by Γ-valley states in the GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341194
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