ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The influence of in situ etching of Si-face n-4H-SiC wafers in H2 and propane on the surface morphology of the grown epi-layers were examined using differential interference contrast (DIC) optical microscopy and atomic force microscope (AFM). Two defect-selective etching techniques were applied in order to reveal the type and spatial distribution of defects in the substrates and epi-layers. It was found that for the flow applied in this experiment propane plays a significant role for the etching process. Depending on temperature and etching time we obtained completely different picture of substrate surface morphology. The propane etching was verified as a tool for substrate surface improvement
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.155.pdf
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