Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 55-57
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The recombination kinetics of the electron-hole plasma in strongly excited, intrinsic GaAs is investigated at room temperature by time-resolved photoluminescence using a line-shape analysis of transient spectra. Special structuring of the samples prevents stimulated emission and diffusion. Population of higher energetic subsidiary conduction-band valleys must be taken into account for densities (approximately-greater-than)1.5×1019 cm−3. A significant influence of Auger recombination is detected for densities (approximately-greater-than)2.5×1019 cm−3. The bimolecular recombination coefficient and an effective Auger coefficient are found to be B=(1.7±0.2)×10−10 cm3 s−1 and Ceff=(7±4)×10−30 cm6 s−1, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108817
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