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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2563-2568 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed study of external quantum efficiency ηQE is reported for AlGaInP-based microcavity light-emitting diodes (MCLEDs). Unlike conventional light-emitting diodes (LEDs) the extraction efficiency γext and far field profile depend on the linewidth of the intrinsic spontaneous emission and wavelength detuning between cavity mode and peak electroluminescence. This dependence makes it difficult to estimate the intrinsic spectrum, hence the performances of MCLEDs. By using a nondestructive deconvolution technique, the intrinsic spectra of a MCLED and a reference LED (with the same active regions) could be determined at different current densities. This allowed precise calculation of γext for both devices (values close to 11% were found for the MCLED), and hence of their apparent internal quantum efficiencies ηintapp. At 55 A/cm2, values of 90% and 40% were determined for the LED and MCLED, respectively. In order to explain this difference, we measured ηQE for devices with different sizes. From a fitting procedure based on a simple model taking into account the device size, we found that the radiative efficiencies of LEDs and MCLEDs were close to 90%. We concluded that the low ηintapp of MCLED was due to a bad current injection, and especially to electron leakage current, as confirmed by numerical simulations. © 2002 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 283-293 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a simple analytical expression for the extraction efficiency of planar dielectric microcavity light-emitting diodes (MCLEDs) based on two distributed Bragg reflectors (DBRs). The calculations take into account the optical properties of the resonator (reflectivities and index contrast of the DBRs, cavity length, refractive index of the outside medium), as well as the spectral properties of the active material. The impact of these factors on the extraction efficiency is investigated and compared to the results of exact numerical calculations. Simple design rules for optimizing the extraction efficiency of MCLEDs are derived and discussed for display and fiber coupling applications. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2972-2974 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe free excitons in absorption and emission at room temperature in Cd0.25Zn0.75Te/ZnTe multiple quantum wells. A large overlap between luminescence and absorption peaks observed at 10 K is maintained up to room temperature showing that the luminescence is predominantly excitonic. From a rate equation analysis we calculate the branching ratio for free carriers relaxing into excitons to free-carrier radiative recombination.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3812-3814 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on molecular beam epitaxy-grown microcavity light-emitting diodes with InGaAs/GaAs quantum wells and a hybrid top mirror are presented. An external quantum efficiency of 14.8% is achieved for a 400 μm diam light-emitting diode. The strong influence of the spectral overlap between the spontaneous emission spectrum and the cavity resonance mode on the radiation pattern is shown. The angular emission profile is compared with model predictions for different detunings, and a very good agreement is obtained when the asymmetric spectral broadening of the intrinsic spontaneous emission is taken into account. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1417-1419 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated Cdx Zn1−xTe/ZnTe multiple quantum wells using absorption techniques. We have observed sharp excitonic features at low temperatures which strongly broaden at room temperature. The strength of the exciton-phonon coupling is determined from linewidth analysis. The large measured coupling explains the lack of well defined exciton resonances at room temperature, an important consequence for their use as optoelectronic devices.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1883-1885 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown a very high finesse microcavity using distributed Bragg reflectors of AlxGa1−xAs and AlAs. The measured Fabry–Pérot mode has a linewidth of 0.84 A(ring) at 930 nm. This implies a finesse in excess of 5500 and an effective (mirror corrected) finesse greater than 1450. Comparison with theoretical calculations for such a structure shows that (i) the growth rates are stable to 0.25% over 14 h and (ii) the internal losses are less than 1 cm−1. © 1994 American Institue of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2093-2095 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The coupled semiconductor microcavity is a system in which there are three oscillators, two photonic and one electronic (quantum well excitons). It develops three strongly coupled modes which allow a wide design range for a variety of optoelectronic applications. The MBE grown structure is comprised of two λ sized GaAs cavities containing InxGa1−xAs quantum wells, separated by a common mirror. Reflectivity measurements show both two coupled photon mode behavior and three coupled mode behavior, i.e., two photon and one exciton, depending on the relative position of the exciton resonance. © 1994 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 864-866 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report photopumped operation of a monolithic coupled semiconductor microcavity laser. The structure consists of two λ-sized GaAs vertical cavities, one on top of the other, coupled together through a common mirror. Due to a wedge induced into each cavity, the detuning between the cavities can be continuously varied when moving across the sample. Depending on the detuning, laser action is simultaneously achieved at two different wavelengths or occurs only at one wavelength. At resonance, we observe coupled dual-wavelength laser emission at two widely spaced wavelengths (13 nm) with the same threshold and same dependence on pump power. © 1997 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4052-4054 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results on visible red top-emission microcavity light-emitting diodes grown by metal organic chemical vapor deposition. The emission characteristics dependence with respect to the detuning between the quantum well emission and the cavity mode was experimentally investigated. The detuning was varied during growth by 60 nm across a 2 in. wafer radius according to a parabolic and reproducible dependence with respect to the position on the wafer. Numerical simulation reproduced very well the experimental results using the internal quantum efficiency ηint as a fitting parameter, resulting in a value of ηint=56%+/−5% at a current density of 20 A/cm2. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3899-3901 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method for determining the intrinsic spontaneous spectrum of vertical-cavity surface-emitting devices is presented. The procedure is based on angle-resolved measurements of the top-emission spectra and comparison with numerical simulations, which corresponds to a deconvolution. The use of this technique is demonstrated on AlGaInP-based microcavity light-emitting diodes designed for top emission at 650 nm. Measurement on reference light-emitting diodes having the same active region confirmed the accuracy of this method which is nondestructive, easy to implement, and can be applied to vertical-cavity surface-emitting lasers operating below threshold. © 2000 American Institute of Physics.
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