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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1685-1687 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present investigation, we have studied the effect of electric field on the growth of carbon nanotubules. Different electric fields corresponding to 3, 6, 9, 15, and 21 V have been applied during the growth of the tubules. The estimate of the electric field corresponding to these voltages cannot be precisely evaluated in view of only approximately defined electrode dimensions. It has been observed that the application of electric field leads to the agglomerates (bundles) of nanotubules. The size, length, and alignment of these bundles varies with the strength of the applied electric field. The best results have been obtained with electric field corresponding to 6 V where the as-formed tubules are in parallel alignment and exist as bundles. As the electric field is increased, the alignment of tubules in the bundle becomes randomly oriented. The degree of randomness increases with increase of electric field after its optimum value corresponding to 6 V. The parallel alignment of the graphitic tubules is thought to result due to orientation of the tubule axis along the direction of the applied electric field corresponding to an optimum value (which for the present case is 6 V) of the impressed voltage. © 1998 American Institute of Physics.
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  • 2
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth spirals have been observed in the basal plane of bulk single crystals of Y-123 high Tc cuprate, using scanning tunneling microscope with the unit cell resolution. The density of screw dislocations present is of the order of 107–108/cm2, close to the recently reported values for the sputtered epitaxial thin films of Y-123. The growth steps or terraces which are generally shown to possess a step height equal to the c parameter of the unit cell, have been further resolved into substeps corresponding to each of the triple perovskite block. Further, in the limit of ultimate resolution we have been able to demonstrate the substep heights corresponding to the individual atomic layers of the unit cell and thus provide a persuasive evidence that single crystals of Y-123 grow via layer-by-layer growth on the atomic scale within the purview of the spiral growth mechanism. Growth features are briefly discussed and it is argued that the observed screw dislocation density is still too low and the orientation is not favorable for realizing optimum flux pinning in these HTSC systems.
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  • 3
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 8 (1975), S. 645-648 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The dielectric constants (εr) of cadmium iodide polytypes have been measured and found to be higher than that of the parent 4H structure. For example, whereas the εr for polytypic structures 32H and 34H is between 120 and 150, for the 4H structure it is between 20 and 25. A possible explanation for this decrease is suggested in terms of the occurrence of the stacking faults and their effect on the orientation polarizability of the cadmium iodide crystals.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 27 (1971), S. 559-562 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The c-axis oscillation X-ray diffraction photographs of platelet-shaped polytypic crystals exhibit 10.l, 20l, etc. rows which are sharply divided into two zones, one having streaked diffraction spots and the other having sharp spots. Evidence and arguments have been advanced to show that this behaviour is due to shape-effect on the diffraction, and the observed streaking is not representative of any real disorder in the stacking of the layers in the crystal.
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  • 5
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The c-axis oscillation photographs of platelet-shaped crystals exhibit curious disorder features on X-ray diffraction photographs. These disorders are shown to be shape-dependent and are not caused by any real disorder in the stacking of layers. Another type of disorder which appears on X-ray diffraction photographs of cadmium iodide polytypic crystals is the 'arcing' disorder. It is shown that in view of the paucity of experimental evidence, the 'arcing' cannot be understood on the basis of the occurrence of manifold tilt boundaries.
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  • 6
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 25 (1969), S. 2654-2655 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
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  • 7
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 28 (1972), S. 635-638 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
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  • 8
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 4 (1971), S. 516-521 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Based on the method outlined by Hirth and Lothe for the calculation of theoretical stacking-fault energies of close-packed structures, a somewhat modified procedure is presented to obtain estimates of theoretical stacking-fault energies of polytypic structures. The stacking-fault energy of a polytype is shown to have a definite correlation with its atomic structure; the atomic structure corresponds to a sequence having the minimum stacking-fault energy. The observed correlation has two important bearings on the works relating to the structure and growth of polytypes: it lends definite support to Jagodzinski's layer-transposition mechanism for the growth of polytypic crystals, and it greatly simplifies the calculation of atomic structures of the polytypes.
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  • 9
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 10 (1977), S. 32-36 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The dielectric constants (εr) of several cadmium iodide polytypes have been measured and found to be higher than that of the parent 4H structure. The dielectric constants for several long-period polytypes have been found to lie between 60 and 190 whereas the 4H parent structure has a value in the range of about 15 to 30. In particular, both increasing polytype periodicity and increasing disorder increase the dielectric constant, e.g. from 16 for an ordered 4H structure to 114 for a 32H structure and 67 for a highly disordered 4H structure. In the absence of disorder a particular polytype has its own characteristic dielectric constant value, e.g. the two 14H polytypes which have a common εr value of 63.
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  • 10
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 5 (1972), S. 347-352 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Cadmium iodide polytypes have been found to undergo a phase transformation when annealed under vacuum (10−4 torr) at temperatures ranging between 250 and 280 °C. Several cases of phase transformation are reported. The possible mechanism for phase transformation, in terms of rearrangement of stacking faults, has been suggested. Evidence and arguments have been advanced in support of the proposed mechanism.
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