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  • 1
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    In:  http://aquaticcommons.org/id/eprint/17907 | 12051 | 2015-09-23 07:09:57 | 17907 | Indian Fisheries Association
    Publication Date: 2021-07-02
    Description: The caryophyllaeid cestode Lytocestoides fossilis infects the freshwater catfish Heteropneustes fossilis. The study was conducted for two consecutive years (2004-06) to record the bio-statistical data of the parasite. The incidence, intensity, density and index of infection of the parasite have been recorded. The infection was more during June to September, moderate during February to May and low during October to January. The parasite brought about severe histopathological changes in the stomach of infected fish. The changes observed in the stomach of fish included structural damage of the villi, inflammation, and fibrosis associated with hyperplasia and metaplasia. The hypertrophy of mucous layer led to vacuolation and necrosis. Histochemical changes were noticed with enhanced carbohydrate, protein and lipid contents. The enhanced substrate content in the infected organ might be due to the disfunctioning of the digestive tract, which results in the accumulation of various metabolites. Mucus secretion was triggered as a protective interaction against parasitic invasion. The parasitic infection affects the general metabolic state of the host and as the result, the fish becomes sluggish and moribund.
    Keywords: Biology ; Heteropneustes fossilis ; Lytocestoides fossilis ; histopathology ; histochemistry ; infections ; catfishes
    Repository Name: AquaDocs
    Type: article
    Format: application/pdf
    Format: application/pdf
    Format: 47-58
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4779-4783 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper addresses issues related to migration and acceptor neutralization of hydrogen (H) in crystalline Si. From spreading resistance measurements, it is shown that disordered regions, both surface and subsurface, directly inhibit the penetration of H. Further, these effects are shown to be independent of the kind of disorder and the method of hydrogenation. Secondary-ion mass spectrometry profiles of deuterated samples confirm the suppression of deuterium movement through the disordered regions. We observe that annealing of these hydrogenated damage regions results in generation of an acceptor deactivation profile which is persistent for temperatures up to 800 °C and durations up to 1 min. This sustained deactivation phenomenon results in up to four decade change in free-carrier concentration. Our results unequivocally suggests that H-soaked damage region acts as a source of atomic hydrogen under rapid thermal annealing.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3188-3190 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and physical property changes of c-Si after substoichiometric oxygen ion implantation have been investigated using I-V, spreading resistance, secondary ion mass spectroscopy, spectroscopic ellipsometry and Fourier transform infrared spectroscopy. A key observation is the presence of donors in the vicinity of the implanted region, resulting in extensive counterdoping of p-type c-Si. Redistribution of the oxygen atoms during the high-temperature anneal results in sharp interfaces aiding the formation of a heterojunction. Mesa-type diodes on the implanted sample exhibit excellent rectification with a diode ideality factor n of 1.2 and a reverse saturation current density of 1×10−8 A/cm2. The near-surface region is shown to be crucial for achieving the high rectification behavior
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3001-3003 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 A(ring). Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1491-1494 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Permeation of atomic hydrogen in Si damaged with Ar implantation has been studied. Ar was implanted at two distinct doses so as to straggle the amorphization threshold, and atomic hydrogen was subsequently introduced by low-energy ion implantation. The deactivation of dopant boron atoms by atomic hydrogen is drastically reduced in silicon wafers subjected to low-energy argon-ion implantation. Trapping of hydrogen in defect sites generated by argon implant and possibly the formation of molecular hydrogen in the implanted region hinders hydrogen permeation into the Si bulk.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Vacuum 39 (1989), S. 1057-1060 
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Annals of operations research 17 (1989), S. 347-361 
    ISSN: 1572-9338
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Economics
    Notes: Abstract This paper compares three different approaches to scheduling in a closed-shop environment, making the case for a knowledge-based approach. A manufacturing example from the food industry is used as a vehicle for the presentation. The first approach attempts to find an optimal solution using a mixed integer linear programming formulation, but the size of the problem renders this approach impractical. The second approach uses a spreadsheet program to obtain feasible solutions, but imbedded assumptions in the heuristics used allow it to be used only for simple demand patterns. The third approach employs expert systems technology. It includes several heuristics and takes all constraints into consideration. The solution obtained may not be optimal, but computational tests suggest that it is far superior to both spreadsheet and manual approaches.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Thin Solid Films 164 (1988), S. 187-190 
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Thin Solid Films 163 (1988), S. 323-329 
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 88 (1994), S. 401-406 
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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