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1

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Growth of InGaAsP/InP single-quantum-well and multiple-quantum well structures by low-pressure metal-organic chemical vapor deposition (1991)

McCrary, V. R. ; Lee, J. W. ; Chu, S. N. G. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 7267-7272

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: InGaAsP/InP single-quantum well and multiquantum-well (MQW) structures have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The quantum wells grown consist of 1.3- and 1.5-μm composition InGaAsP, with barriers of InP. Layer thicknesses vary from 18 to 1300 A(ring) for the various structures grown. Analysis of these structures by low-temperature photoluminescence reveals distinct, sharp luminescent peaks, with half-widths from 4.8 to 13 meV. Cross-sectional transmission electron microscopy (XTEM) and Auger spectroscopy of the quantum-well structures reveals extremely sharp interfaces and homogeneous composition, demonstrating the feasibility of LP-MOCVD for the growth of very thin epitaxial layers. This preliminary data indicates that the growth of MQW structures for the next generation of laser diodes (i.e., MQW-distributed-feedback lasers), with monolayer interfacial abruptness, is possible by LP-MOCVD.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347624

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2

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X-ray diffraction from corrugated crystalline surfaces and interfaces (1990)

Macrander, A. T. ; Slusky, S. E. G.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 443-445

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Satellite peaks analogous to superlattice peaks have been observed for both corrugated InP substrates and for such substrates overgrown with epitaxial InGaAsP. These satellites are entirely due to the corrugations. High-resolution x-ray diffraction using extremely asymmetric reflections in the glancing exit configuration was used. A kinematical expression for the intensities of the satellite peaks is derived for strain-free structures.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102759

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3

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Measurement of the miscut angle of crystal surfaces vicinal to major crystal planes by x-ray diffractometry at glancing incidence (1988)

Slusky, S. E. G. ; Macrander, A. T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 2042-2043

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The width of an x-ray diffraction peak is a sensitive function of the angle of incidence when the angle of incidence is less than 1°. Measurements of x-ray diffraction peak widths taken at a glancing angle of incidence can be interpreted to yield information on miscut angles of crystal surfaces relative to major crystal planes. Miscut angles of a few arcminutes can be measured. A high-resolution multiple crystal x-ray diffractometer is necessary to achieve the accuracy of peak width measurement required. The technique is applicable to any crystal. As an example, we discuss the case of a (100) InP surface measured using the highly asymmetric (311) diffraction.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100313

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4

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Rare-earth substitution in (BiYCa)3(FeSiGe)5O12 bubble films (1987)

Luther, L. C. ; Slusky, S. E. G. ; Brandle, C. D. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 61 (1987), S. 325-327

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The substitution of Y by Sm, Tb, Gd, and Ho in (BiYCa)3 (FeSiGe)5O12 bubble garnet is shown to have large effects on the growth-induced anisotropy Kgu. The presently accepted film composition intended for 6- or 8-μm period bubble memory devices demands partial substitution of Y by Gd and Ho. However, comparing films grown under the same growth conditions it is observed that YGdHoBiIG films possess less Kgu than their Gd, Ho-free counterparts. Thus, to satisfy Kgu requirements, the supercooling during growth must be increased by 20 K to 80 or 85 K with undesirable effects on defect densities. A new film composition containing Sm, Tb, and Gd has been formulated to satisfy all known material property specifications for 6- or 8-μm period memory devices. It can be grown with only 45–50 K supercooling.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.338824

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5

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Effect of growth atmosphere on rare-earth iron garnets grown from PbO-based fluxes (1986)

Fratello, V. J. ; Slusky, S. E. G. ; Rana, V. V. S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 564-570

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The growth atmosphere over a PbO fluxed melt can significantly affect the platinum and lead concentrations and the magnetic properties of rare-earth iron garnet films grown from that melt. We have investigated this effect using the simple composition (Gd2.5Eu0.5Fe5O12. The films were grown in N2, air, and O2 atmosphere on (111) MgCaZr substituted GGG substrates (substrate lattice parameter a0=12.497 A(ring)) by conventional liquid-phase-epitaxy techniques from PbO and PbO/B2O3 fluxes. Lead is incorporated self-compensatingly from the flux as Pb2+ and Pb4+. The oxygen partial pressure of the growth atmosphere affects the platinum incorporation in the film through the equilibrium between neutral elemental Pt0 and ionic Pt4+ species in the melt. Incorporation of elemental species such as Pt0 in the film is unfavorable, but oxidized Pt4+ ions are accommodated in the lattice in concentrations that depend on their melt concentrations and distribution coefficients. Lead and platinum concentrations were determined by x-ray fluorescence. The incorporation of lead and platinum increased the lattice parameter and the index of refraction of these garnets. The diamagnetic octahedral substitution of Pt had a predictable effect on the magnetic properties, increasing the saturation magnetization and decreasing the Curie temperature, cubic anisotropy, and gyromagnetic ratio. Least-squares analysis and annealing studies showed that lead makes a positive contribution to the growth-induced anisotropy that seems to depend only on the concentration of the Pb2+ species. Platinum incorporation causes a negative contribution to the growth-induced anisotropy that can be annealed out at temperatures of 850–950 °C.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336614

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6

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Effect of diamagnetic substitution on growth-induced anisotropy in (YBi)3Fe5O12 (1986)

Fratello, V. J. ; Slusky, S. E. G. ; Brandle, C. D. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 718-720

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Films of (Y3−x−yBixPby) (Fe5−zGaz)O12 (z=0–1.1) and (Y3−x−yBixPby) (Fe5−wInw)O12 (w=0–0.6) garnets were prepared by liquid-phase epitaxy. The effects of tetrahedral Ga and octahedral In substitution on the Bi-based growth-induced uniaxial anisotropy in (YBi)3Fe5O12 films were measured. Both Ga and In resulted in a linear decrease in the anisotropy with increasing substitution. The effect of octahedral In was twice that of tetrahedral Ga.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337419

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7

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Growth-induced anisotropy in bismuth: Rare-earth iron garnets (1986)

Fratello, V. J. ; Slusky, S. E. G. ; Brandle, C. D. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 2488-2497

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The bismuth-doped rare-earth iron garnets, (R3−x−yBixPby)Fe5O12 (Bi:RIG, R=Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y), were prepared under constant growth conditions to investigate the influence of ionic species on the bismuth-based growth-induced uniaxial anisotropy Kgu. The effect of ionic species on growth-induced anisotropy in Bi:RIG was not consistent with the ionic size model of site ordering. In particular, Bi:SmIG, Bi:EuIG, and Bi:TbIG displayed high growth-induced anisotropies, up to 331 000 erg/cm3 at room temperature for x≈0.5. The temperature dependence of these Kgu's was somewhat higher than that of the well studied Bi:YIG. The site ordering of Bi can be modeled by assuming that small, low-oxygen-coordination BiO+3−2ww melt complexes have a strong site selectivity for small, high-oxygen coordination sites at the growth interface.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337163

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8

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X-ray diffraction with a four-reflection monochromator (1987)

Slusky, S. E. G. ; Macrander, A. T.

Copenhagen : International Union of Crystallography (IUCr)

Applied crystallography online 20 (1987), S. 522-528

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ISSN: 1600-5767

Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Topics: Geosciences , Physics

Notes: A formula is derived for simulating rocking-curve measurements made with an X-ray diffractometer fitted with a four-reflection monochromator. The derivation is carried out both graphically and algebraically. Results of a simulation using this formula are then compared with experimentally obtained rocking curves. The rocking curves were obtained using a diffractometer with a four-reflection monochromator that uses 440 reflections from two channel-cut germanium crystals. The experimental data comprise 200, 400, 600, 511, 711, 622, 422 and 444 reflections from thick single-crystal indium phosphide grown by the vertical-gradient freeze technique. The simulated data correlate well with the experimental data, although the simulations consistently show somewhat higher reflectivities and narrower linewidths than the experiment, indicating the existence of broadening mechanisms not included in the simulation that are affecting the experiment.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1107/S0021889887086096

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