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  • 1
    Electronic Resource
    Electronic Resource
    Conduction and scattering mechanisms in potential modulated inversion layers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1463-1468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative approach to the polycrystalline semiconductor model using an original e-beam irradiation method is proposed. The e-beam was scanned along lines parallel and perpendicular to the drain-source direction in a metal-oxide-semiconductor field-effect transistor (MOSFET) structure. Consequently, the electrostatic surface potential ψs was periodically modulated and appeared similar to that of a polycrystalline semiconductor. The threshold voltage shift, effective and field-effect mobilities were measured as a function of both the irradiation period and dose. Conductivity and Hall effect measurements were performed between 4 and 400 K and a two-mobility conduction model is proposed to interpret the dependence of the carrier concentration and Hall mobility on temperature. Potential modulation scattering and screening mechanisms were studied by varying the gate voltage. The results are compared with those obtained in polysilicon thin layers and polysilicon MOSFETs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348906
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  • 2
    Electronic Resource
    Electronic Resource
    Evidence of silicon interdiffusion in selectively doped GaAs-AlAs superlattices by Hall measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7166-7172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall and photo-Hall measurements have been performed on GaAs-AlAs short-period superlattices selectively doped with silicon. The dopant was introduced selectively in either the GaAs or AlAs layers or at the interface. A superlattice doped uniformly in both layers was investigated for comparison. The electrical properties were controlled by DX deep donors lying in the gap of the superlattice. Hall data are interpreted with a model taking into account the existence of two DX deep donors and a shallow donor both related to the silicon impurity. It is found that the silicon donor state in AlAs lies 60 meV below the silicon donor state in GaAs. The ionization energies of the DX states in GaAs and AlAs are computed to account for the experimental results. Interpretation of Hall data in selectively doped samples needs to assume segregation of silicon atoms during epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355033
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  • 3
    Electronic Resource
    Electronic Resource
    Two-step rapid thermal annealing of B- and As-implanted polycrystalline silicon films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 273-276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the electrical properties of polycrystalline silicon films implanted with boron or arsenic at doses 4×1014, 8×1014, and 5×1015 cm−2, respectively. Two post-implantation rapid thermal annealings (RTAs) have been performed: a standard one-step RTA (1150 °C, 20 s) and a two-step RTA (1150 °C, 4 s+680 °C, 4 min). We find that the electrical behavior depends on the implanted species. Boron-implanted films exhibit the highest electrical properties (high dopant activation and mobility). The trap density Nt at grain boundaries is found to be independent of the heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350699
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of DX center in silicon doped GaAs–AlAs short period superlattices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6520-6525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of various GaAs–AlAs short period superlattices uniformly doped with silicon are investigated. Hydrostatic pressure is used to capture electrons from the conduction miniband onto the deep donor states associated with the large lattice relaxation of the Si donor in GaAs, AlAs, and at the GaAs–AlAs interface. The ionization energies and densities of different deep donors are determined. We find that a two-band model of conduction, assuming the existence of three donor states (discrete structure of the Si-DX center), accounts for the Hall data in all samples. Application of hydrostatic pressure allows us to vary the miniband energy in some samples and leads to improved determination of the donor energies and concentrations. When the AlAs growth rate is half of the GaAs growth rate, the fraction of DX states decreases in AlAs, whereas the fraction of DX states increases at the interface indicating a strong Ga/Al cation exchange across the interface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370156
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical and structural properties of rapid thermally annealed boron-doped silicon films deposited by plasma-enhanced chemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4682-4688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural, electrical, and piezoresistive properties of in situ boron-doped thin silicon layers deposited by plasma-enhanced chemical-vapor deposition at 320 °C on oxidized silicon substrates and subjected to a rapid thermal anneal (1100 °C for 20 s) have been investigated. Macroscopic electrical parameters derived from resistivity and Hall-effect measurements were compared to microscopic characteristics deduced from optical data to explain the low-temperature coefficients of resistance measured on this polycrystalline material. Finally, the piezoresistivity gauge factors of these heavily doped layers are discussed in view of their internal stress state and of other structural characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357306
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  • 6
    Electronic Resource
    Electronic Resource
    Evidence of bistable shallow-deep silicon donors in GaAs-AlAs superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7356-7360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electrical properties of silicon-doped superlattices under hydrostatic pressure. Hall data are interpreted with a conduction model involving a nonmetastable shallow donor besides the metastable DX states lying in GaAs and AlAs layers. A change from a Γ miniband conduction into a X miniband conduction is induced by increasing pressure, showing that the shallow donor is linked with the X minimum of the superlattice miniband.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356648
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  • 7
    Electronic Resource
    Electronic Resource
    Electrically inactive grain boundaries in rapid thermal annealed boron-implanted polycrystalline silicon films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2536-2538 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatment rapid thermal annealing (RTA) or conventional thermal annealing on the electrical properties of polycrystalline silicon films implanted with boron in the intermediate concentration range is examined. A standard furnace anneal uniformly redistributes the dopant and results in an electrical activity of grain boundaries (GBs). On the contrary, a rapid thermal anneal does not activate GBs. Impurity gettering does not occur at GBs in RTA and implanted boron does not redistribute uniformly within the grains leading to a strong increase of the Hall mobility in small-grained silicon films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102879
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  • 8
    Electronic Resource
    Electronic Resource
    Electron mobility and charge correlation in silicon doped GaAs–AlAs short period superlattices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1515-1519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon deep donor (so-called DX center) is known to exhibit a bistable charged state DX−/d+ in GaAs and related compounds. We investigate the electron mobility as a function of the carrier concentration μ(n) in a silicon doped GaAs–AlAs short period superlattice at the temperature of liquid nitrogen, i.e., in the regime of metastability of the DX center. To vary the electron density, two methods are utilized: gradual photoexcitation of the DX donors or appropriate thermal capture cycles after complete photoionization of the DX donors. We observe the multivalued character of μ(n) and hysteresis effects when tuning of the metastable DX center occupancy is achieved with various procedures. Similar behavior has been previously observed in the silicon doped AlGaAs alloy and has been explained as the result of changing the degree of the donor charge spatial correlation. Our results show the influence of the photon energy when the electron concentration is varied by illuminating the sample with above- or below-bandgap light. This is due to radically different mechanisms of persistent photoconductivity in these two spectral domains. Moreover, the strong mobility enhancement we observed in the interband regime is explained by DX charge transfers which are specific for superlattice structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373848
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  • 9
    Electronic Resource
    Electronic Resource
    Pressure sensors based on silicon doped GaAs–AlAs superlattices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2941-2946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show how GaAs–AlAs short period superlattices, in place of AlGaAs thin layers, improve the performances of n-type III–V semiconductors as pressure sensing material. Pressure induced electron capture on relaxed silicon donor sites (so called DX center) is responsible for the high pressure coefficient of resistance (30% per kbar). In comparison to AlGaAs, band gap engineering is employed to optimize both pressure and temperature sensitivities of GaAs–AlAs pseudoalloys between 0 and 200 °C under pressures up to 2000 bars. An electrical characterization is made by performing resistance and Hall effect measurements as functions of hydrostatic pressure and temperature on two microstructures forming the monolithic transducer. The heterostructures consist of (GaAs)9–(AlAs)4 superlattices doped with silicon at concentrations of 1.4×1017 and 2×1018 cm−3, respectively. Accurate pressure measurements (resolution less than 0.2 bar) are performed on two resistors patterned on these microstructures. Monolithic microsensors can be designed on such a stacked GaAs–AlAs two-resistor microstructure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372282
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical properties of oxygen thermal donors in silicon films synthesized by oxygen implantation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1208-1212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity and Hall measurements have been carried out on thin silicon films formed by oxygen implantation (SIMOX) and high-temperature annealing. These layers have then been annealed between 450 and 850 °C for 1 h in order to study the electrical behavior of oxygen thermal donors (TD). The maximum donor concentration occurs at 550 °C for TD-I and 750 °C for TD-II. The concentration of TD-II is higher than that of TD-I and the distribution of TD-II can be nonuniform. Thermal ionization energies of these donor states are also derived. A TD level (220 meV) deeper than the typical one (150 meV) is responsible for the electrical properties of the SIMOX layers. Subsequent annealing activates shallow TD states and compensation centers. Thus the ionization energy of the deep TD level decreases greatly, when TDs are generated. High carrier mobilities have been measured which have been limited only at low temperatures by interface scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343010
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