Publication Date:
2014-08-14
Description:
Identifying the role of defects that limits graphene's quality is important for various graphene devices on SiO 2 . In this paper, monolayer graphene samples with defect densities varying from ∼0.04 μ m −2 to ∼10 μ m −2 on SiO 2 are characterized by both microscopic imaging and electrical transport measurements. We found that the height of graphene on SiO 2 is directly related to its defect densities with a reverse correlation, which in turn degrade graphene's quality through a complicated mechanism rather than defects scattering only. We suggest that, at relative high defect density regime, graphene-SiO 2 coupling is greatly enhanced causing an increasing charged impurity scattering significantly.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
Permalink