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  • 1
    Electronic Resource
    Electronic Resource
    Nonlinear photoacoustic effect of semiconductors in dc electric field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3865-3871 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear piezoelectric photoacoustic (PA) effect of silicon wafers in the applied dc electric field is studied experimentally and theoretically. The apparent nonlinear dependencies of PA amplitude and phase on the laser power are observed in experiments with different dc electric fields. The nonlinearity is explained theoretically by considering the nonlinear surface and bulk Auger recombinations. We present a "subsurface approximation'' method to solve the nonlinear transport equation for photogenerated carriers in semi-infinite samples. A good agreement between the experimental results and theoretical predictions is obtained as the incident laser beam with and/or less than medium power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346273
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  • 2
    Electronic Resource
    Electronic Resource
    Second-harmonic responses of modulated photoreflectance in semiconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4710-4715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental measurements of nonlinear modulated photoreflectance (MPR) phenomena in Si and GaAs wafers, in which the obvious second-harmonic (2 f) MPR signals are detected in addition to the fundamental frequency (f) MPR signals when the pumping laser power is sufficiently strong, are reported. Meanwhile, a linear-to-quadratic transition in the curve of the f MPR signal versus the pumping laser power is observed in Si samples but not in GaAs samples. It is also found that the 2 f MPR signals are more sensitive to the ion-implantation doses than the f MPR signals which are traditionally applied to monitor the ion implantation in semiconductors. It is found that the contribution of the photoinduced modulation of the surface electric field is the main source of the nonlinear MPR signals and the contribution is theoretically discussed in detail. A one-dimensional theoretical model is established, and the theoretical results are in good agreement with the experimental data. The dependencies of the f and the 2 f MPR signals on the third-order optical nonlinear susceptibility χ(3) and the surface-state density Ns are also discussed, and a method for measuring χ(3) and N4 of semiconductors is introduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354338
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  • 3
    Electronic Resource
    Electronic Resource
    Photoacoustic effect of silicon wafers with a p/n junction in the dc electric field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1088-1093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoelectric photoacoustic effect of silicon wafers with a p/n junction in the dc electric field is studied experimentally and theoretically. Based on the transport properties of semiconductors, four kinds of thermal wave sources are considered: (i) instantaneous intraband nonradiative thermalization, (ii) interband nonradiative bulk recombination of photogenerated carriers (PGC), (iii) interband nonradiative surface recombination of PGC, and (iv) instantaneous Joule thermalization of PGC in the applied electric field. The theoretical results are in good agreement with those of experiment. Both show that the contribution of the Joule thermalization is a major factor and the photoacoustic signal will be strengthened as the dc electric field increases beyond an appropriate value. Therefore, the signal-to-noise ratio and the contrast of photoacoustic imaging of the semiconductor devices can be improved by the dc external electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347158
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  • 4
    Electronic Resource
    Electronic Resource
    Three-dimensional theory to study photothermal phenomena of semiconductors. II. Modulated photothermal deflection (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7007-7013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The investigation is further extended to the modulated photothermal deflection (PTD). The three-dimensional Navier–Stokes equation is solved analytically for a layered-structure sample, and then numerical calculations are given. The influences of the optical, thermal, and electronic parameters on the PTD signal are discussed in detail. It is shown that the thermal lens and electronic-strain effects make significant contributions to the PTD signal, but the thermoelastic effect is dominant. The potential applications of the PTD technique to microscopic imaging are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349803
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  • 5
    Electronic Resource
    Electronic Resource
    Three-dimensional theory to study photothermal phenomena of semiconductors. I. Modulated optical reflectance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6999-7006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thorough theoretical study of the modulated optical reflectance (MOR) response of semiconductor samples has been presented. The three-dimensional plasma and thermal equations are solved analytically, and then numerical calculations are given for the high-frequency MOR signal. The influences of the optical, thermal, and electronic parameters on the MOR signal are discussed in detail. The generation mechanisms of the MOR signal will be clarified. On the other hand, the mathematical analyses also provide a quantitative tool by which one can fit the theoretical curves to experimental data to determine several material parameters, such as the surface recombination velocity, the lifetime of photogenerated carriers, and thermal conductivity of the materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349802
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  • 6
    Electronic Resource
    Electronic Resource
    Pulsed laser induced mode-mismatched crossed-beam thermal lens measurements (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2741-2749 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article, an accurate Fresnel diffraction model for a pulsed laser induced thermal lens effect in mode-mismatched crossed-beam configuration is presented. The effect of a lateral offset between the two beams is included in the model. This model is used to calculate the diffraction field of the probe beam at the detection plane from the very near- to the far-field, therefore the evolution of the intensity profile of the probe beam from the near- to the far-field is clearly illustrated. Numerical calculations predict and experimental results demonstrate that the thermal lens (TL) signal maximum is obtained when the probe beam propagates about a characteristic distance away from the sample position, while the characteristic distance is determined by the radius of the excitation beam in the sample and the wavelength of the probe beam. At large size mismatch of two beams and near-field detection cases, the TL signal is approximately independent on the sample location relative to the waist of the probe beam. The theoretical and experimental results are of great importance to configuration optimization of an extremely sensitive and compact TL instrument, which is the trend in the development of analytical instruments. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148189
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  • 7
    Electronic Resource
    Electronic Resource
    Thermoelastic response of pulsed photothermal deformation of thin plates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 716-722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical investigation of the dynamic thermoelastic response of pulsed photothermal deformation (PTD) deflection detections for some Q-switch laser pulses and finite thickness samples has been presented. The results show that signals can be characterized by a quasistatic process when the laser pulse rise time is on the order of 1 μs and the sample thickness is in submillimeter range (typically for semiconductor wafers). However, as the pulse rise time decreases or the sample thickness increases, the dynamic wave behavior gradually becomes apparent, and the quasistatic approximation gives only a contour curve of the dynamic time evolution. When the rise time decreases on the order of 10 ns or less for the same kind of the samples, the PTD deflection signal reflects a totally dynamic wave behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357815
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  • 8
    Electronic Resource
    Electronic Resource
    Modeling Regional Economic Resilience to Disasters: A Computable General Equilibrium Analysis of Water Service Disruptions (2005)
    Oxford, UK; Malden, USA : Blackwell Publishing Ltd/Inc.
    Journal of regional science 45 (2005), S. 0 
    Details
    ISSN: 1467-9787
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geography , Economics
    Notes: Abstract.  Recent natural and manmade disasters have had significant regional economic impacts. These effects have been muted, however, by the resilience of individual businesses and of regional markets, which refers to the inherent ability and adaptive responses that enable firms and regions to avoid potential losses. Computable general equilibrium (CGE) analysis is a promising approach to disaster impact analysis because it is able to model the behavioral response to input shortages and changing market conditions. However, without further refinement, CGE models, as well as nearly all other economic models, reflect only “business-as-usual” conditions, when they are based on historical data. This paper advances the CGE analysis of major supply disruptions of critical inputs by: specifying operational definitions of individual business and regional macroeconomic resilience, linking production function parameters to various types of producer adaptations in emergencies, developing algorithms for recalibrating production functions to empirical or simulation data, and decomposing partial and general equilibrium responses. We illustrate some of these contributions in a case study of the sectoral and regional economic impacts of a disruption to the Portland Metropolitan Water System in the aftermath of a major earthquake.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0022-4146.2005.00365.x
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  • 9
    Electronic Resource
    Electronic Resource
    WATER COLUMN LIGHT ATTENUATION IN DANSHUEI RIVER ESTUARY, TAIWAN (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 41 (2005), S. 0 
    Details
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : The penetration of sunlight into the water column plays a critical role in the aquatic ecosystem. This study investigates light attenuation through the water column of the Danshuei River estuary and explores the models for quantifying it. The measurement of photosynthetically active radiation (PAR) indicates that the conventional exponential attenuation of light with depth is a very good model. A light attenuation coefficient may be derived from the PAR measurements at each location. The simpler measurements of Secchi depth (SD) provide an approximate estimate of the attenuation coefficients through an inverse linear relationship. The results also reveal that the amount and kinds of materials, which are either dissolved or suspended in the water, control light attenuation through the water column. However, the linear regression with such a model results in very poor correlation, and a relatively large constant term for the Danshuei River estuary. The regression with salinity yields a good correlation, indicating that the fraction of sea water might be a good parameter for estimating light attenuation coefficient for practical application in the Danshuei River estuary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1752-1688.2005.tb03746.x
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  • 10
    Electronic Resource
    Electronic Resource
    Theoretical studies of pulsed photothermal phenomena in semiconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5718-5725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a thorough theoretical study of pulsed photothermal phenomena in semiconductors. The explicit expressions of the temporal distributions of plasma wave, thermal wave, and displacement field within a finite semiconductor sample, excited by an incidence of the pulsed laser, are derived analytically. We simulate numerically the time evolutions of the pulsed photothermal optical reflectance, the pulsed photothermal optical beam deflection (i.e., Mirage effect), and the pulsed photothermal displacement signals for different characterized parameters of semiconductor samples. The theoretical works are significant to provide a quantitative time- and space-resolved study of dynamic deexcitation processes and characterization of parameters of semiconductor samples under normal experimental conditions by the pulsed photothermal techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354188
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