Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 4614-4617
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Nickel disilicide (NiSi2) was formed on Si(100) and Si(111) substrates by the codeposition of Ni and Si. The Schottky barrier height was about 0.65 eV for NiSi2 on Si(100), independent of NiSi2 film thickness. By contrast, the Schottky barrier height for type-B NiSi2 on Si(111) depended on NiSi2 film thickness. Schottky barrier height decreased with increasing NiSi2 film thickness. It became constant (0.65 eV) above 50-nm-thick NiSi2. The Schottky barrier height determined by extrapolating NiSi2 film thickness to 1–2 layers of the NiSi2 film was 0.78–0.79 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341239
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