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  • 1
    Electronic Resource
    Electronic Resource
    Determination of quadratic nonlinear optical coefficient of AlxGa1−xAs system by the method of reflected second harmonics (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 596-601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quadratic nonlinear optical coefficient in the AlGaAs system has been systematically measured as a function of the alloy composition at the fundamental wavelength of 1.064 μm by the method of reflected harmonics. The harmonic waves from the thin-film samples are analyzed considering various interferences including multiple reflections. The experimental results show a reduction of the magnitude of the second-harmonic coefficient with increasing Al content in the AlGaAs system. This tendency is consistent with Miller's rule.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355272
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  • 2
    Electronic Resource
    Electronic Resource
    Properties of SiGe oxides grown in a microwave oxygen plasma (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6135-6140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360556
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  • 3
    Electronic Resource
    Electronic Resource
    Optical transition energies of GaInP quantum wells with GaInP/AlInP superlattice barriers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1355-1357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study on the optical transition energies of GaInP quantum wells with GaInP/AlInP superlattice barriers was carried out. It was found that the commonly used simple approach to regard the short-period superlattice barrier as a bulk barrier with a height of its miniband edge brought about a substantial error in calculating the quantized levels in these structures. Instead, it was revealed that an excellent agreement between theory and experiment can be obtained when the wave function of each layer in the superlattice barriers is exactly calculated, demonstrating the validity of the effective-mass approximation for the quantum-well structures with superlattice barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357804
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  • 4
    Electronic Resource
    Electronic Resource
    Observation of the Stark effect in coupled quantum wells by electroluminescence and circularly polarized photoluminescence excitation spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7476-7481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful observation is reported of the quantum-confined Stark effect in electroluminescence (EL) under a "forward'' electric-field condition, with a current injected into a p-i-n diode containing Al0.3Ga0.7As/GaAs symmetric coupled double quantum wells (CDQWs). The Stark shift observed in EL and (under a reverse bias) in photoluminescence (PL), in both of which the transitions involved are between the electron and heavy-hole lowest states, is found to be symmetrical with respect to the flatband bias, in agreement with calculations. The origin of the optical transitions between electron and light- or heavy-hole states in the CDQWs is also clearly identified by a combination of PL and circularly polarized photoluminescence excitation spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356618
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  • 5
    Electronic Resource
    Electronic Resource
    Redistribution of Sb in an atomic-layer-doped Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1152-1154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the redistribution of an atomic-layer-doped (ALD) Sb in Si upon post-growth annealing using secondary-ion mass spectrometry (SIMS). Shoulder development in the SIMS profile was observed after annealing over 710 °C, suggesting the presence of two different diffusion mechanisms. Diffusivities were found to be in excess of the bulk diffusivity and were concentration dependent above n(Sb)≈5×1017 cm−3. Asymmetric diffusion of ALD Sb in the epitaxial layers and Sb segregation at the oxide interface were also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104348
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  • 6
    Electronic Resource
    Electronic Resource
    Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1617-1619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Control of dimension and position of Ge dots on a nanoscale is accomplished by combining Stranski–Krastanov growth mode with selective epitaxial growth technique in windows surrounded by SiO2 films on Si substrates. The dimension and the number of these dots are controlled by the size of the windows, and a single dot is grown in a window with the size of less than 300 nm. Moreover, clear phonon-resolved photoluminescence (PL) is observed from the Ge dots, reflecting the improved uniformity in their dimensions. The PL energy is found to be strongly dependent on the dot's dimension. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121131
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  • 7
    Electronic Resource
    Electronic Resource
    Absence of Stark shift in strained Si1−xGex/Si type-I quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2097-2099 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic photoluminescence in a transverse electric field has been studied in strained Si1−xGex/Si type-I quantum wells (QWs) in the weak field regime. With increasing electric field, a steady blue-shift of the free exciton emission energies has been observed, thereby suppressing the anticipated downward shift due to a quantum confined Stark effect. It is revealed that a field-driven decrease of the exciton binding energies gives a good account of the experimental blue-shift for a wide range of well widths, which is also in good agreement with variational calculations. We also find that the extremely small conduction band offset characteristic of stained Si1−xGex/Si type-I QWs is responsible for the absence of the Stark red-shift and the mixed dimensionality. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115596
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication of ultrafine gratings on GaAs by electron beam lithography and two-step wet chemical etching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1212-1214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 50 nm period gratings were produced on thick GaAs substrates by using electron beam lithography and two-step wet chemical etching. The size was very close to the theoretical limit of the electron beam lithography. For transferring such a fine grating onto GaAs, a two-step wet chemical etching method was developed, where a H2SO4-H2O2-H2O system is first used to roughly etch the oxygen and carbon-contaminated GaAs surface, followed by surface planarization with a Br-CH3OH system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103488
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 110-112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A parallel arrangement of thin wires has been fabricated in the AlxGa1−xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is negative at 4 K and exhibits a shoulder at a magnetic field, where the diameter of the cyclotron orbit amounts to 90 nm, which is supposed to be the effective wire width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100384
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and characterization of atomic layer doping structures in Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2485-2492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to fabricate atomic layer doping structures in silicon using a combination of molecular-beam epitaxy and solid-phase epitaxy is developed. The antimony dopants are restricted to a thickness less than the resolution limit of secondary ion mass spectrometry, and exhibit extremely sharp C-V carrier profiles of less than 2 nm for a single Sb monolayer (ML). Hall and resistivity data show full activation for 0.1 ML and saturation at 8×1013 electrons cm−2. Measurements down to 4 K show metallic conduction for highly doped samples (above 0.05 ML) two-carrier conduction for intermediate levels, and strong freezeout for low amounts of Sb (below 0.01 ML). The two-dimensional electron gas is shown to exist by angular dependence of magnetoresistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342794
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