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  • 1
    Electronic Resource
    Electronic Resource
    Electrical characterization of low-pressure chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2397-2401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of as-deposited and oxygen-annealed low-pressure chemical-vapor-deposited (LPCVD) silicon dioxide (SiO2) metal-oxide-silicon (MOS) structures were investigated. As-deposited LPCVD SiO2 MOS structures exhibit a high oxide fixed charge density in the mid-1011 cm−2 and an interface state density in the low-1011 cm−2 eV−1 due to the large number of oxygen and silicon dangling bonds. A low electron barrier height in these structures (1.2 eV) is presumed to be due to lowering of the barrier by excess silicon microclusters. Oxygen-annealed LPCVD SiO2 MOS structures exhibit oxide fixed charge and interface state densities in the mid-1010 cm−2 and mid-1010 cm−2 eV−1, respectively. Both the as-deposited and annealed devices exhibit turnaround in flatband voltage shift with avalanche electron injection. However, the direction of shift is opposite for the two devices with the annealed device being very similar to that of thermally grown SiO2 MOS structures. Apparently, oxygen annealing restructures and oxidizes the partial SiOx in the as-deposited LPCVD oxide into stochiometric SiO2. However, the residual nonstochiometric SiO2 microclusters in the bulk result in an electron barrier height of only 2.3 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353093
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  • 2
    Electronic Resource
    Electronic Resource
    Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with critical current density up to 106 A/cm2 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4259-4261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with zero resistance temperature Tc up to 102 K and critical current density Jc as high as 106 A/cm2 at 77.7 K have been successfully prepared via laser ablation and thallium diffusion. Prolonged low temperature annealing in air was used for film processing. X-ray diffraction patterns indicated that the films were highly oriented 1212 phase with c axes normal to the LaAlO3(100) or MgO(100) substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354440
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical characterization of rapid thermal nitrided and re-oxidized low-pressure chemical-vapor-deposited silicon dioxide metal–oxide–silicon structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1968-1972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of rapid thermal nitrided and re-oxidized low-pressure chemical-vapor-deposited (LPCVD) silicon dioxide metal–oxide–silicon (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance–voltage characteristics. Nitridation at 1000 °C for 15 s followed by re-oxidation for 60 s at 1000 °C in an oxygen/nitrogen ambient was found to be superior to the same nitridation for 60 s with no re-oxidation. Typical values of fixed charge and interface state densities for devices subjected to nitridation and re-oxidation in a mixture of oxygen and nitrogen were 4×1010 cm−2 and 7×1010 eV−1 cm−2, respectively. Avalanche electron injection using electric fields of 3–3.5 MV/cm produced positive shifts in flatband voltage for devices nitrided at 1000 °C for 15 s followed by re-oxidation, whereas samples nitrided at 1000 °C for 60 s without the re-oxidation yielded negative shifts in flatband voltage. An electron barrier height of 2.4 eV was found for these nitrided samples. These results strongly suggest that device quality MOS dielectrics for high-voltage power MOS field-effect-transistors can be realized by nitridation/re-oxidation of LPCVD oxide. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361047
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical characterization of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited silicon dioxide metal-oxide-silicon structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7985-7989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of rapid thermal nitrided and reoxidized plasma-enhanced chemical-vapor-deposited (PECVD) silicon dioxide metal-oxide-silicon (MOS) structures were investigated. Both nitridation temperature and time affect the properties of the MOS structures as revealed by capacitance-voltage (C-V) characteristics. Nitridation at 1000 °C for 60 s followed by reoxidation for 60 s at 1000 °C in an oxygen/nitrogen ambient was found to be superior to the same nitridation followed by reoxidation in pure oxygen. Typical values of fixed charge and interface state densities for devices subjected to nitridation and reoxidation in a mixture of oxygen and nitrogen were 4×1010 cm−2 and 7×1010 eV−1 cm−2, respectively. Avalanche electron injection using electric fields of 3–5 MV/cm produced negative shifts in flatband voltage for low fluence levels and positive flatband voltage shifts for larger fluence levels. Furthermore, the magnitudes of both positive and negative shifts and the electron fluence level at which turnaround occurs increase with electric field. However, independent of the electric field, the flatband voltage saturates very close to its preinjection value. These results strongly suggest that device quality MOS dielectrics can be realized by nitridation/reoxidation of PECVD oxide. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357910
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  • 5
    Electronic Resource
    Electronic Resource
    Heteronuclear rare-gas dimer bonding: Understanding the nature of the Rydberg states that dissociate to the highest energy level of the Xe*(5d) manifold (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 2985-2990 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: (1+1′) resonance enhanced multiphoton ionization (REMPI) spectra of jet-cooled KrXe and ArXe in the vicinity of the high energy Xe*5d[3/2]10←Xe(1S0) atomic line at 83889.99 cm−1 were obtained by exciting the neutral dimers with tunable coherent vacuum ultraviolet (VUV) radiation generated by four-wave sum mixing in mercury vapor, and then detecting the resultant ions in a time-of-flight (TOF) mass spectrometer. Precise excited state constants were derived from analyses of the resultant vibrational fine structure, while equilibrium bond lengths were estimated from Franck–Condon factor intensity simulations. Excited state symmetries were deduced from separate ultraviolet (UV) (2+1) REMPI spectra recorded with linearly and circularly polarized light. The results of this work confirm a recent model proposed by Lipson and Field, where the RgXe*(5d) states are predicted to be strongly destabilized relative to RgXe*(6p) due to strong 5d-6p Xe* l-mixing induced by the ground state Rg atom partner making up the dimer. Orbital mixing is also responsible for the observation of appreciably strong RgXe*(5d) spectra in both one- and two-photon excitation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.479581
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  • 6
    Electronic Resource
    Electronic Resource
    Mass-resolved two-photon and photoelectron spectra of Xe2 in the Xe(4f) region above the first molecular ionization limit (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 3944-3953 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two-photon resonance enhanced multiphoton ionization (REMPI), time-of-flight (TOF) mass spectrometry, and photoelectron spectroscopy have been used to investigate the gerade Xe2 Rydberg states located just above the first molecular ionization limit. Effective vibrational analyses are presented for five dimer states that dissociate to Xe+Xe*(4f ). The electronic symmetries of the band systems in this region were deduced from separate REMPI spectra recorded with linearly and circularly polarized laser light while excited state bond lengths were estimated from Franck–Condon intensity simulations. Two photoelectron signals were measured for each molecular resonance examined in this work. The strongest one, having a near zero kinetic energy, is attributed to dimer electrons released through autoionization. The weaker photoelectron signals corresponding to faster electrons originate from excited state Xe atoms formed by predissociation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476994
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  • 7
    Electronic Resource
    Electronic Resource
    A 118 nm vacuum ultraviolet laser/time-of-flight mass spectroscopic study of methanol and ethanol clusters in the vapor phase (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 6990-6999 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Clusters of methanol and ethanol formed above neat liquid samples were entrained in a supersonic jet of helium and probed in the expansion using 118 nm vacuum ultraviolet laser single-photon ionization/time-of-flight (TOF) mass spectrometry. Almost every cluster ion observed in the TOF mass spectra could be represented by the formula H(ROH)n+, where R=CH3 or C2H5, and n=1–5. Formation of these species is attributed to a well-established ionization pathway where each protonated (n−1)-mer originates from its n-mer neutral parent. Signals in the TOF mass spectra due to the protonated trimers H(CH3OH)3+ and H(CH3CH2OH)3+ were found to be the most intense and provides direct evidence that these particular cluster ions are "magic-number" structures. The possible relationships between the observed ion data and the neutral cluster vapor phase distributions are discussed. In this context, methanol and ethanol vapor cluster distributions at 298.15 K and at several pressures≥the equilibrium vapor pressure were computed using the grand canonical Monte Carlo and molecular dynamics techniques. Lastly, differences between these experiments and the results of bimolecular reaction studies are discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1466467
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  • 8
    Electronic Resource
    Electronic Resource
    Extreme ultraviolet laser/time-of-flight mass spectra of Kr2 near Kr*(4d,5p′,6s) (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 4025-4035 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: New single-photon spectra of jet-cooled Kr2 between ∼98 700 and 99 900 cm−1 have been recorded with an extreme ultraviolet laser generated by four-wave sum-mixing in Xe gas. Molecular ions created by (1+1′) resonance enhanced multiphoton ionization, and daughter atomic ions created by excited state predissociation prior to ionization were mass dispersed and detected in a time-of-flight mass spectrometer. Analyses of the subsequent single isotopic spectra have resulted in vibrational numbering and constants for eight band systems of Kr2 that dissociate to Kr(1S0)+Kr*(4d,5p′,6s). Excited state bond lengths were estimated by Franck–Condon factor intensity simulations. When possible, electronic symmetry assignments for the states were established by correlation diagrams constructed from angular momentum arguments. Possible reasons are discussed for the deviations observed for the shape of many of the observed Rydberg state potential energy curves from their expected nonbonding form. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308559
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  • 9
    Electronic Resource
    Electronic Resource
    Estimates of the influence of nuclear deformations and shell effects on the lifetimes of exotic radioactivities
    Amsterdam : Elsevier
    Nuclear Physics, Section A 464 (1987), S. 205-222 
    Details
    ISSN: 0375-9474
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9474(87)90335-6
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  • 10
    Electronic Resource
    Electronic Resource
    An improved method for chiral oxazaborolidine-catalyzed reduction of 4-chromanone analogs and MK-0499
    Amsterdam : Elsevier
    Tetrahedron Letters 35 (1994), S. 6409-6412 
    Details
    ISSN: 0040-4039
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0040-4039(00)78232-3
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