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  • 1
    facet.materialart.
    Unknown
    Progress in fracture mechanics (1970)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: Fracture mechanics applications in stress analysis and structural design, considering rocket motor case failure
    Keywords: STRUCTURAL MECHANICS
    Type: ; DIOTEKHNIKA (
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Unknown
    Seawater carbonate chemistry and behaviours in juvenile yellowtail kingfish (2020)
    PANGAEA
    In:  Supplement to: Jarrold, Michael; Welch, Megan J; McMahon, Shannon J; McArley, Tristan; Allan, Bridie J M; Watson, Sue-Ann; Parsons, Darren M; Pether, Steve M J; Pope, Stephen; Nicol, Simon; Smith, Neville; Herbert, Neill; Munday, Philip L (2019): Elevated CO2 affects anxiety but not a range of other behaviours in juvenile yellowtail kingfish. Marine Environmental Research, 104863, https://doi.org/10.1016/j.marenvres.2019.104863
    Details
    Publication Date: 2024-03-15
    Description: Elevated seawater CO2 can cause a range of behavioural impairments in marine fishes. However, most studies to date have been conducted on small benthic species and very little is known about how higher oceanic CO2 levels could affect the behaviour of large pelagic species. Here, we tested the effects of elevated CO2, and where possible the interacting effects of high temperature, on a range of ecologically important behaviours (anxiety, routine activity, behavioural lateralization and visual acuity) in juvenile yellowtail kingfish, Seriola lalandi. Kingfish were reared from the egg stage to 25 days post-hatch in a full factorial design of ambient and elevated CO2 (∼500 and ∼1000 μatm pCO2) and temperature (21 °C and 25 °C). The effects of elevated CO2 were trait-specific with anxiety the only behaviour significantly affected. Juvenile S. lalandi reared at elevated CO2 spent more time in the dark zone during a standard black-white test, which is indicative of increased anxiety. Exposure to high temperature had no significant effect on any of the behaviours tested. Overall, our results suggest that juvenile S. lalandi are largely behaviourally tolerant to future ocean acidification and warming. Given the ecological and economic importance of large pelagic fish species more studies investigating the effect of future climate change are urgently needed.
    Keywords: Alkalinity, total; Alkalinity, total, standard deviation; Angle; Animalia; Aragonite saturation state; Aragonite saturation state, standard deviation; Behaviour; Bicarbonate ion; Bicarbonate ion, standard deviation; Calcite saturation state; Calcite saturation state, standard deviation; Calculated using CO2SYS; Calculated using seacarb after Nisumaa et al. (2010); Calculated using seacarb after Orr et al. (2018); Carbon, inorganic, dissolved; Carbon, inorganic, dissolved, standard deviation; Carbonate ion; Carbonate ion, standard deviation; Carbonate system computation flag; Carbon dioxide; Carbon dioxide, standard deviation; Chordata; Coast and continental shelf; Containers and aquaria (20-1000 L or 〈 1 m**2); Fugacity of carbon dioxide (water) at sea surface temperature (wet air); Fugacity of carbon dioxide in seawater, standard deviation; Identification; Laboratory experiment; Lateralization; Nekton; Number; OA-ICC; Ocean Acidification International Coordination Centre; Partial pressure of carbon dioxide, standard deviation; Partial pressure of carbon dioxide (water) at sea surface temperature (wet air); Pelagos; pH; pH, standard deviation; Potentiometric; Potentiometric titration; Proportion of time; Registration number of species; Salinity; Salinity, standard deviation; Seriola lalandi; Single species; Size; South Pacific; Species; Temperate; Temperature; Temperature, water; Temperature, water, standard deviation; Treatment; Type; Uniform resource locator/link to reference; Velocity
    Type: Dataset
    Format: text/tab-separated-values, 9968 data points
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    DATA PANGAEA
  • 3
    facet.materialart.
    Unknown
    Seawater carbonate chemistry and the antipredator behaviour of a reef fish (2023)
    PANGAEA
    Details
    Publication Date: 2024-03-15
    Description: The appropriate behavioural response to predation risk is critical to survival; however, behavioural responses can be subjected to trade-offs. For example, individuals may engage in riskier foraging behaviour to secure sufficient energy if resources are limited. Additionally, elevated CO2 can influence foraging and antipredator behaviour of marine organisms. Yet, how the availability of energetic resources may influence antipredator behaviour in an elevated CO2environment is unknown. We tested the effects of food ration (low and high: 4 and 8% of body weight per day, respectively) on antipredator behaviour at ambient (489 µatm) and elevated (1022 µatm) CO2 in juvenile Amphiprion percula at 50 d post-hatching. Juveniles were from parents held at either ambient or elevated CO2, as parental exposure can influence phenotypic response in offspring. Antipredator behaviour was severely impaired by elevated CO2, with juveniles reared at elevated CO2 exhibiting no change in feeding rate in the presence of the predator cue compared with a 〉67% reduction in feeding rate in ambient CO2 fish. By contrast, food ration had a minor effect on the change in feeding rate in response to the predator cue, with only a 2.3% difference between high and low food ration fish. The effect of elevated CO2 on antipredator behaviour of juveniles was not influenced by food ration. Parental exposure to elevated CO2 influenced the baseline feeding rate and exhibited a small carry-over effect in elevated CO2 juveniles. These results suggest that reef fish could exhibit riskier behaviour at elevated CO2 levels, regardless of the energetic resources available.
    Keywords: Alkalinity, total; Alkalinity, total, standard deviation; Amphiprion percula; Animalia; Aragonite saturation state; Behaviour; Bicarbonate ion; Calcite saturation state; Calculated using CO2SYS; Calculated using seacarb after Nisumaa et al. (2010); Carbon, inorganic, dissolved; Carbonate ion; Carbonate system computation flag; Carbon dioxide; Change; Chordata; Coast and continental shelf; Containers and aquaria (20-1000 L or 〈 1 m**2); Feeding strikes; Fugacity of carbon dioxide (water) at sea surface temperature (wet air); Group; Identification; Laboratory experiment; Length; Mass; Mortality/Survival; Nekton; OA-ICC; Ocean Acidification International Coordination Centre; Other; Partial pressure of carbon dioxide, standard deviation; Partial pressure of carbon dioxide (water) at sea surface temperature (wet air); Pelagos; pH; pH, standard deviation; Potentiometric; Potentiometric titration; Rank; Ratio; Salinity; Salinity, standard deviation; Single species; South Pacific; Species, unique identification; Species, unique identification (Semantic URI); Species, unique identification (URI); Survival; Temperature, water; Temperature, water, standard deviation; Treatment; Treatment: partial pressure of carbon dioxide; Tropical; Type of study
    Type: Dataset
    Format: text/tab-separated-values, 59344 data points
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    DATA PANGAEA
  • 4
    Electronic Resource
    Electronic Resource
    On the current mechanism in reverse-biased amorphous-silicon Schottky contacts. II. Reverse-bias current mechanism (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2581-2589 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical mechanisms that determine the current transport in reverse-biased Schottky diodes on undoped "device-grade'' hydrogenated amorphous silicon (a-Si:H) are elucidated. The current-voltage (J-V) curves for several Schottky diodes up to reverse-biases of 40 V have been measured at temperatures between 40 and 180 °C. The reverse currents generally increase approximately exponentially with reverse bias. The decrease of the apparent barrier height as obtained from internal photoemission experiments is in good agreement with the decrease of the thermal activation energy with reverse bias. Extra information on the current transport mechanism can be obtained from the bias dependence of the prefactor in the Arrhenius plot. A theoretical model is presented which gives a semiquantitative fit to all the features observed in the experimental data. The model involves quantum-mechanical tunnelling of a thermal distribution of carriers through an image-force lowered triangular potential shape. At low reverse bias, the apparent barrier height decreases due to image-force lowering alone and the prevailing carrier transport mechanism is drift/diffusion or thermionic emission over the barrier, which can be determined from the bias dependence of the conduction prefactor in the Arrhenius plots. At higher fields, the apparent barrier height decreases faster than the image-force lowering. This is due to tunnelling of carriers through (the top of) the potential barrier and the apparent barrier becomes approximately equal to the mean energy at which the carriers move through the barrier. This energy is lowered with increasing reverse bias. The conduction prefactor from the Arrhenius plot now decreases with increasing applied bias and gives an indication of the effective tunnel probability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354671
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  • 5
    Electronic Resource
    Electronic Resource
    Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1548-1551 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current transport through good quality undoped silicon-rich silicon nitride is normally limited by the contacts. However, if the concentration of silicon dangling bonds is increased by current stressing or raising the nitrogen content, current transport becomes bulk controlled and well described by the Poole–Frenkel effect in a defect band. Using thin-film diode structures on either p-type or n-type silicon substrates, we show that the I/V characteristics can only be explained if current transport in the defect bands within the silicon-rich nitride is via the movement of holes. Hole transport through defect states is probably a common feature in all the amorphous silicon-rich alloys. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370966
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  • 6
    Electronic Resource
    Electronic Resource
    Defects in preamorphized single-crystal silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2214-2216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct electrical characterization of 1-μm-thick Si+ preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual deep-level defects within the regrown layer. A deep-level trap at Ec −0.40 eV has been found associated with the amorphous-crystalline boundary dislocation loops. In addition, a near mid-gap trap at Ev+0.54 eV, observed in p-type samples, is believed to be responsible for a spatially localized generation current of ∼2×10−6 A/cm2 associated with the dislocation loops.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103895
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of shallow (Rp 〈20 nm) As- and B-implanted and electron-beam annealed silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2694-2703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing characteristics of shallow (Rp 〈20 nm) arsenic- and boron-implanted layers were found to be a complex function of the thermal cycle which the sample experienced. Arsenic at 10 keV and boron at 4.5 keV (derived from 20 keV BF+2 ) were implanted in the dose range 1014–1016 cm−2 into (100) Si. The optimal implant doses to maximize conductivity with essentially undiffused layers of device quality material were 2 × 1015 and 1015 cm−2 for As and B, respectively. A comparison of rapid isothermal annealing using the multiple-scan electron-beam annealing method and conventional furnace annealing was made. For arsenic minimum resistivities of about 2 × 10−4 Ω cm were obtained after furnace annealing at 550 °C for 15 min or electron-beam annealing with a peak temperature between about 700 and 1100 °C during a 100 ms (or 1 s) anneal. For boron, electron-beam annealing for 100 ms (or 1 s) with a peak temperature of between ∼700 and 1000 °C produced a resistivity of 7 × 10−4 Ω cm which compared with 1.2 × 10−3 Ω cm following conventional furnace annealing. High-resolution SIMS showed that peak temperatures of up to about 1000 and 1100 °C for B and As layers, respectively, may be reached with essentially no diffusion. An extension of diffusion theory applicable to conventional furnace annealing of deeper implant gave results in accord with SIMS profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336977
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  • 8
    Electronic Resource
    Electronic Resource
    Current induced drift mechanism in amorphous SiNx:H thin film diodes (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2978-2980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the drift in the current–voltage characteristics of silicon-rich amorphous silicon nitride metal–semiconductor–metal diodes can be explained by a mechanism whereby electron trapping centers are created via hole–electron recombination. A first order model which includes excitation of holes by hot electrons moving into the anode and recombination of electrons with holes trapped in the valence band tail is in good quantitative agreement with the measured dependencies between drift, device thickness, current density, time, and charge passed through the device. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112482
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  • 9
    Electronic Resource
    Electronic Resource
    Tunneling effective mass in hydrogenated amorphous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1815-1817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling effective mass of electrons in undoped a-Si:H has been determined from measurements on Schottky diodes operating with high reverse fields. Under these conditions, the change of current with electric field is a sensitive function of effective mass. The tunneling effective mass was measured to be 0.09±0.02 me for a range of different samples giving a tunneling constant of ≈40 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109558
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  • 10
    Electronic Resource
    Electronic Resource
    Room-temperature silicidation using radiation-enhanced diffusion in hydrogenated amorphous silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 715-717 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous disilicides of the refractory metals chromium and molybdenum have been formed at room temperature in hydrogenated amorphous silicon. The silicides are produced by radiation-enhanced diffusion during bombardment through a thin metal film on the surface of the amorphous silicon. The properties of the layers are similar to those produced by thermal annealing at temperatures 〈300 °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125871
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