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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2613-2618 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An accurate theoretical model based on the two-band effective-mass-approximation that includes nonparabolic, strain, finite temperature, many-body, and deep donor (DX) center effects is used to investigate the electronic properties of δ-modulation-doped semiconductor heterostructures with the aim of optimizing the active channel density. Inclusion of the DX centers in the model leads to the saturation of the electronic density with increasing δ-doping concentration for both structures doped on one side and structures doped on both sides of the channel. The saturation value in the latter case is almost twice as high as in the former. The self-consistent calculations show that by using a superlattices of superlattices configuration with an appropriately chosen superlattice barrier one can achieve a 50% increase in the maximum charge transfer compared to conventional heterostructures of similar design, without increasing impurity scattering in the channel.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1161-1168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electronic properties of the δ-modulation-doped Al0.30Ga0.70As/In0.15Ga0.85As heterojunction for a variety of different configurations. Experimental findings are compared with theoretical predictions based on the two-band effective mass approximation including strain, many-body, finite temperature, and DX center effects. We have also examined the case where the δ doping is placed in an embedded GaAs well within the Al0.30Ga0.70As. This is intended to reduce the effects of DX centers. In this instance, as the doping concentration is increased, experimentally determined channel density, ns, suggests higher saturation values, which may leave a residual electron density in the GaAs well. This residual charge density is parallel with the electron density in the InGaAs well and represents an additional conducting path. The features of the theoretical channel density versus doping density curves are confirmed by 300 and 1.6 K resistivity and Hall measurements, and Shubnikov–de Haas measurements made at 1.6 K.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2748-2748 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3164-3166 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3253-3255 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A one-dimensional two-band tight-binding model is used to develop simple criteria governing the optical transition strength of a direct gap formed by zone folding in a superlattice of alternating layers of two indirect band-gap semiconductors. The model study explains the weak optical transitions calculated for the III-V superlattices as being due to the similarities of the constituents and predicts strong optical transitions for large band discontinuities and type I alignment, particularly in GaP/Si2. The optical strength in the Si2/Ge2 superlattice is found to depend strongly on the growth direction and on strain. The oscillator strength calculated by the simple model is checked in two cases against a more elaborate calculation using the sp3d5 empirical tight-binding band structure and atomic wave functions.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2010-2012 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a quantum well on a vicinal plane, the lowest band gap caused by a lateral periodic potential due to artificial structures with the period of the steps is estimated. The absorption spectrum of transitions across the minigap is calculated. Factors leading to possible applications as opto-electronic devices are discussed.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3989-3991 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theory of ballistic electron emission microscopy is presented that incorporates constant tunnel current feedback and models the band structure and space charge effects on the electron transmission. The computation is beyond the effective mass approximation but short of being from first principles. We compare theory and experimental Au/GaAs(001) dI/dV data and find that the L point does not contribute to an observable threshold and that the corresponding experimental feature is due to band structure effects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1315-1322 
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Time resolved optical spectroscopies and other ultrafast optical measurements in condensed matter ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary The concept of coherence due to optical excitation of an ensemble of two-level atoms is relatively simple and well established. For the laser-excited electron-hole pairs or excitions in a semiconductor, the Pauli exclusion and the Coulomb interaction lead to the necessary evolution of the theory of coherence to incorporate the spin degree of freedom, the filling of phase space, the excitons and particularly, their correlation. We have developed two theoretical approaches: one using the Feynman diagrams and one in terms of a force-force correlation function. The former gives us a pictorial way to describe the optical processes and the latter gives us a prescription for computation beyond the perturbative approach. In this paper, we will attempt to use simple physical pictures based on our theory to describe the time development of the coherence, the role of correlation, the dependence on the polarization of light, and the nonlinear time-resolved optical experiments which measure the coherence.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 447 (2007), S. 573-576 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Research in semiconductor spintronics aims to extend the scope of conventional electronics by using the spin degree of freedom of an electron in addition to its charge. Significant scientific advances in this area have been reported, such as the development of diluted ferromagnetic ...
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 50 (1983), S. 391-402 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract For non-phonon interaction mechanisms which span a frequency range comparable to the Fermi energy, solution of the Eliashberg equation must cover both a range of frequencies and a range of momentum values. Kirzhnits, Maksimov, and Khomskii (KMK) have derived an intergral equation for the superconducting transition where frequency is eliminated in favor of the momentum. We have found a systematic correction to the KMK equation and investigated the effect onT cfor model interactions.
    Type of Medium: Electronic Resource
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