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  • 1
    Electronic Resource
    Electronic Resource
    Modification of structural and opto-electronic properties of CdS thin films by Cu doping (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4548-4551 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of p-type CdS thin films in a chemical bath doped with Cu is reported. Cu-doped films showed an amorphous nature and exhibited high electrical conductivity and quick photoresponse characteristics at high and low levels of Cu doping, respectively. Undoped CdS films were near stoichiometric, crystalline in nature, and exhibited slow photodecay. Cu doping influenced the photoresponse characteristics, structural, electrical, and optical properties of the films. The optical band gap of CdS film changed from 2.35 to 2 eV after Cu doping. These films may be used as a second layer on top of a lower band gap material in thin film solar cell structures and in wide range photo-IR detector structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359417
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  • 2
    Electronic Resource
    Electronic Resource
    Instability in resistance and variation of activation energy with thickness and deposition temperature of CdSe0.6Te0.4 thin films deposited at high substrate temperatures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 237-240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdSe0.6Te0.4 thin films deposited at high substrate temperatures showed a rapid increase in resistance when exposed to oxygen and atmosphere. This behavior is explained by an oxygen adsorption model. A decrease in activation energy with an increase in thickness and deposition temperature is explained by the fact that the depth of the impurity levels is reduced with an increase in thickness and deposition temperatures. The low activation energy obtained in oxygen or atmosphere heated films is accounted for by the fact that oxygen acceptor levels are very shallow from the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342578
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  • 3
    Electronic Resource
    Electronic Resource
    p-type CdS thin films formed by in situ Cu doping in the chemical bath (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2956-2958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of p-type CdS thin films, doped with Cu, in a chemical bath, is reported for the first time. The Cu doped films showed amorphous nature and exhibited high electrical conductivity as compared to undoped films, which were near stoichiometric with n-type conductivity and crystalline in nature. Cu doping influenced the photocurrent response, structural, electrical, and optical properties of the films. The optical band gap of the CdS film varied from 2.35 to 2 eV after Cu doping. The potential application of these films as an absorber layer in thin film solar cells is being investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109181
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  • 4
    Electronic Resource
    Electronic Resource
    The change of electrical conduction in the valence/conduction band to the impurity band in CdSexTe1−x thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3536-3538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reported here are the results of investigations carried out on the mechanism of electrical conduction in CdSexTe1−x thin films between 300 and 125 K in vacuum. All the films showed a transition from grain boundary limited conduction in the conduction/valence band to phonon assisted hopping via the impurity band (impurity band conduction) at around 280–290 K. The grain boundary limited conduction showed an activation energy equal to about 0.14 eV and conduction via impurity band showed an activation energy of about 0.02 eV, which is characteristic of phonon assisted hopping conduction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345329
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  • 5
    Electronic Resource
    Electronic Resource
    The influence of thickness and deposition temperature on the conduction activation energy of CdSe0.2Te0.8 thin films (1990)
    Springer
    Journal of materials science 25 (1990), S. 1803-1807 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The electrical conductivity and stability in resistance of CdSe0.2Te0.8 thin films in different ambients and deposited at different substrate temperatures were investigated. A reduction in conduction activation energy with increase in film thickness and deposition temperature is accounted for by the fact that in CdSe x Te1−x inhomogeneous semiconductor thin films, the potential relief inhomogeneity may be reduced with increase in film thickness and substrate temperature, which results in the decrease of conduction activation energy of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01045388
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical conduction and transmission electron microscopy studies of CdSe0.8Te0.2 thin films (1991)
    Springer
    Journal of materials science 26 (1991), S. 6443-6447 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electrical resistance of CdSe0.8Te0.2 thin films were found to be dependent on various film parameters such as substrate temperature, film thickness, deposition rate and post-deposition heat treatment in different environments. A decrease in film resistivity was observed for thicker films and for those heat treated in vacuum. Films deposited at higher substrate temperatures and faster rates showed an increase in film resistivity. A spectrum of activation energies was observed in the films which fell within either of the activation energies observed in CdSe or CdTe films. Films heated in an oxygen environment showed an increase in film resistivity with a different activation energy. Transmission electron microscopy (TEM) of the films showed an improvement in crystallinity with increasing film thickness and substrate temperature, and a reduction in crystallinity with increasing deposition rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02387827
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  • 7
    Electronic Resource
    Electronic Resource
    The influence of bath composition on the photocurrent response and morphology of chemically deposited CdS thin films (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 211-220 
    Details
    ISSN: 1057-9257
    Keywords: Photocurrent ; Morphology ; Cds ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The influence of the chemical bath composition on the photocurrent response, film morphology and optical transmittance of chemically deposited CdS thin films is reported. The bath parameters such as concentrations of triethanolamine, thiourea, ammonia and cadmium acetate and the bath temperature controlled the photosensitivity, photocurrent decay, morphology and optical transmittance of the films. The optimum concentration of the bath for getting good-quality photosensitive films with good optical transmittance was identified in this investigation.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010502
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  • 8
    Electronic Resource
    Electronic Resource
    Modification of the dark and photoconductivity and the optical transmittance of solution-grown CdS thin films (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 133-141 
    Details
    ISSN: 1057-9257
    Keywords: CdS ; Chemical deposition ; Photodetector ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Very interesting behaviour is shown by chemically deposited CdS thin films for optoelectronic applications after air and vacuum (10-5 Torr) annealing. Vacuum annealing of samples at about 100°C caused the dark conductivity to improve by five orders of magnitude. The dark and photoconductivity of air-annealed (at around 200°C) samples increased by seven and two orders of magnitude respectively. Air-annealed (at 350°C for about 2 min) samples exhibited a very quick photoresponse (〈2 s for two decades of photocurrent decay) with σp/σd ≈ 105 for a bias of 10 V, which may be exploited for photodetector applications. Air or vacuum annealing of samples for a minimum of 10-15 min caused the optical transmittance above the band edge to increase by 10%-15% and annealing the sample at 200°C caused the absorption edge to shift towards the longer-wavelength region compared with the as-prepared and 100 and 350°C annealed films.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020306
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  • 9
    Electronic Resource
    Electronic Resource
    ZnCdS films for solar cell and photodetector applications deposited by In Situ chemical doping of CdS with Zn (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 269-275 
    Details
    ISSN: 1057-9257
    Keywords: ZnCdS ; CdS ; ZnS ; photodetector ; chemical doping ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: ZnCdS films were formed by in situ chemical doping of CdS with Zn in a chemical bath. The X-ray diffraction (XRD) patterns of CdS films after Zn doping showed a more disordered nature, consisting of reflections from Zn0.049Cd0.951S (JCPDS 40-834) as well as CdS greenockite (hexagonal, JCPDS 41-1049) and hawleyite (cubic, JCPDS 10-0454) phases. A comparison of the optical transmittance spectra for undoped and Zn-doped films showed that the cut-off wavelength was modified after Zn doping, indicating the presence of impurity states in the band gap. Zn-doped films showed an increase in dark conductivity after annealing at about 200°C. These films exhibit promising characteristics for application in solar cell and photodetector structures.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050505
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  • 10
    Electronic Resource
    Electronic Resource
    Growth modes of solution-grown CdS thin films (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 11-17 
    Details
    ISSN: 1057-9257
    Keywords: CdS ; chemical deposition ; complexing agent ; sulfurising agent ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The growth modes of CdS thin films on glass in a chemical bath were analysed using scanning electron microscopy and optical microscopy. The results of these studies show that the film growth occurs by ion-by-ion condensation and by colloidal particles of CdS adhering to the substrate. Both mechanisms are operative from the initial stages of film growth. The predominance of one or other of these two growth modes depends on the abundance of Cd and S ions present in the solution, which is determined by the amount of complexing and sulphurising agents and ammonia used for the controlled release of Cd and S ions into the solution. The growth mode influences the optical properties of the films.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050104
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