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  • 1
    Electronic Resource
    Electronic Resource
    Reply to "Comments on ‘Measurements of minority-carrier diffusion length in n-CuInSe2 by electron-beam-induced current method' '' [J. Appl. Phys. 66, 5412 (1989)] (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3760-3760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of the vertical electron-beam-induced current configuration for diffusion lengths in the submicron meter range is briefly discussed. Results of our experiments [J. Appl. Phys. 66, 5412 (1989)] are compared to earlier investigations by other authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346296
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion length measurements on n-CuInS2 crystals by evaluation of electron-beam-induced current profiles in edge-scan and planar configurations (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2006-2009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion length of minority carriers in n-CuInS2 crystals grown under different values of nonmolecularity Δm is examined by electron-beam-induced current (EBIC) experiments. Current profiles are recorded in edge-scan and planar configurations. The values of the diffusion length are obtained by comparison with modeled profiles showing reasonable agreement between both experimental configurations. The defect-electron diffusion length varies from 0.4±0.15 to 1.25±0.25 μm for samples prepared with Δm=−0.09 to Δm=−0.2, respectively. From EBIC profiles in the edge-scan configuration the surface recombination velocity can be estimated to about S=104 cm s−1 for unpassivated CuInS2 samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358836
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  • 3
    Electronic Resource
    Electronic Resource
    CuInS2 thin film growth monitoring by in situ electric conductivity measurements (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 956-959 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of CuInS2 thin films by coevaporation has been monitored by in situ electrical conductivity measurements. Films with different cation ratio In/(In+Cu) were investigated. During the controlled cool-down period we obtain conductivity versus temperature data which are completed ex situ in the low-temperature region. The formation of the semimetallic CuS phase in Cu-rich films is found during the cool-down period at a substrate temperature of about 450 K. For In-rich films the dominance of charged grain boundary states is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364224
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of the cooling rate on the electrical conductivity of coevaporated CuInS2 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3667-3669 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the influence of the cooling rate in a deposition process on the electrical conductivity σ of CuInS2 thin films for solar cells. In situ measurements were used in order to monitor the electrical conductivity of Cu-poor films during growth and cooldown. It is shown that the room-temperature electrical conductivity σRT depends significantly on the cooling rate of the film after deposition. σRT reaches 1×10−3 S cm−1 for a cooling rate of 2.0±0.2 K min−1 whereas for abrupt cooling and higher cooling rates σRT is reduced to 10−6 and 10−5 S cm−1, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365487
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  • 5
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of CuInS2 on Si(111) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3010-3012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of CuInS2 are grown on chemically hydrogen terminated Si(111) surfaces with 4° miscut by molecular beam epitaxy. The morphological and structural properties are determined by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and texture analysis. The data show growth in the 〈112〉 direction and substantial twinning of the 75-nm-thick films. High-resolution cross-sectional micrographs of the interface indicate semicoherent epitaxial growth via an interfacial indium-rich secondary phase. The pronounced faceting of the film surface is discussed in relation to twin lamellae. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116822
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  • 6
    Electronic Resource
    Electronic Resource
    CuInS2 based thin film solar cell with 10.2% efficiency (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3294-3296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient solar energy conversion with CuInS2 thin films is reported. The copper-rich p-type absorber is prepared by thermal coevaporation. A copper to indium ratio between 1.0 and 1.8 can be tolerated with small (≤10%) solar-to-electrical conversion losses. Copper excess phases (CuS) are removed chemically. The cell structure glass/Mo/p-CuInS2/n-CdS/n+-ZnO/Al delivers 10.2% at simulated AM 1.5 conditions. The device properties are discussed based on its energy band diagram.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110786
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  • 7
    Electronic Resource
    Electronic Resource
    Depth dependent collection functions in thin film chalcopyrite solar cells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3007-3009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron beam induced current experiments in the planar geometry are performed on Mo/CuInX2/CdS/ZnO thin film solar cells where X is S, Se. We measure the collection efficiency of cells as a function of the beam energy and subsequently identify the depth dependent collection function. For CuInS2 devices an effective diffusion length of 1.0±0.1 μm and a depletion layer of 0.05±0.03 μm is determined. The collection function of a CuInSe2 cell points towards a low recombination rate at the back contact and a diffusion length exceeding 3 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114934
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependent electron beam induced current experiments on chalcopyrite thin film solar cells (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1011-1013 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam-induced current (EBIC) profiles of Mo/CuInX2/CdS/ZnO thin film solar cells with X=Se, S were recorded at different temperatures. We measure the collection efficiency of cells as a function of the beam energy and subsequently identify the depth dependent collection function. For a CuInS2 based cell, charge collection is maintained by diffusion transport of minority carriers to the junction with an effective diffusion length of 1.3±0.2 μm. This value is independent on temperature between 123 and 373 K. A CuInSe2 based cell exhibits increased collection of charge carriers created at the back contact on decreasing temperature. The temperature variation of the EBIC profiles is discussed considering the effect of bulk and grain boundary recombination. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118467
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 482-484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of CuInS2 thin films and solar cells is investigated as a function of postdeposition treatments for different temperatures and excitation intensities. Annealing in hydrogen atmosphere causes an increase of PL intensity at 1.445 eV by more than a factor of 100, while subsequent annealing in oxygen or air ambient passivates this transition, which is ascribed to a donor-acceptor pair recombination between a sulphur vacancy and a copper vacancy. A defect mechanism is suggested that assumes the passivation of sulphur vacancies by oxygen in grain surfaces which can be activated by hydrogen annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119585
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  • 10
    Electronic Resource
    Electronic Resource
    Measurements of minority-carrier diffusion length in n-CulnS2 by electron-beam-induced current method (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5412-5415 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion length of minority carriers in n-CuInS2 samples is examined with electron-beam-induced current (EBIC) technique in vertical and planar configuration. Theories for the interpretation of the EBIC data from the experiments are reported. The holes as minority carriers show a diffusion length in the range of 1 μm, which is promising for high efficient solar energy conversion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343688
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