ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In situ low phosphorus doped silicon films are deposited onto glass substrates by low-pressure chemical vapor deposition method. The deposition parameters, temperature, total pressure, and pure silane gas flow are, respectively, fixed at 550 °C, 0.08 Torr, and 50 sccm. The varying deposition parameter is phosphine/silane mole ratio; when this ratio varies from 2×10−6 to 4×10−4, the phosphorus concentration and the resistivity after annealing, respectively, vary from 2×1018 to 3×1020 atoms cm−3 and from 1.5 Ω cm to 2.5×10−3 Ω cm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105280
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